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ZnO Substrates (zno + substrate)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
Yohjiro Kawai
Abstract We demonstrated InxGa1-xN epitaxial growth with InN mole fractions of x = 0.10 to 0.23 on an m-plane ZnO substrate by metal-organic vapor phase epitaxy. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate. The strain of the epilayers was investigated by X-ray reciprocal space mapping. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Investigation of ZnO substrates: effects of high temperature annealing

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2007
S. Graubner
Abstract In order to promote growth of ZnO films on ZnO substrates, defects introduced by the surface polishing procedure have to be removed. We investigate the influence of high temperature annealing in O2 -atmosphere on the structural properties of the ZnO substrates by atomic force microscopy. Only at temperatures above 1100 °C atomic steps (terraces) are seen, the remaining defects can be assigned to dislocations in a density between 104 to 105 cm,2. Interestingly the electrical properties also change from high resistive to n-type conduction, which make the substrates , apart for the homoepitaxial growth on a perfect template , suitable for top-to-bottom contacts. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

High-quality ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2004
Hiroyuki Kato
Abstract High-quality ZnO epilayers have been grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O-rich, the growth mode changed from three- to two-dimensional growth and the line widths of (0002) and (10,10) ,-rocking curves showed dramatic narrowing from 471 to 42 arsec and from 1635 to 46 arcsec, respectively. These values are narrower compared to those of ZnO on sapphire and also those of device-grade MOCVD-grown GaN. Moreover, A-, B-excitons (FEA, FEB), and the n = 2 state of FEA at 3.378, 3.393, and 3.424 eV, respectively, were clearly observed in the low-temperature (4.2 K) photoluminescence spectrum of ZnO grown under O-rich flux conditions. Our results show that growth under high O-rich flux conditions is required to produce high-quality Zn-polar ZnO films. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]