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ZnO Layer (zno + layer)

Distribution by Scientific Domains

Physics and Astronomy	50%
Polymers and Materials Science	25%
Engineering	25%

Selected Abstracts

Vertical-type organic device using thin-film ZnO transparent electrode

ELECTRICAL ENGINEERING IN JAPAN, Issue 2 2007
Hiroyuki Iechi
Abstract We propose a double heterojunction organic light-emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the OLED depending on the ZnO sputtering conditions are investigated. Excellent characteristics of the novel OLED were obtained, as high as 470 cd/m2 at 22 V and 7.6 mA/cm2. The results obtained here demonstrate that the vertical organic light-emitting transistor (OLET) using a ZnO layer as an electron injection layer is promising as a key element for flexible sheet displays. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(2): 49,55, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20151 [source]

Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices,

ADVANCED FUNCTIONAL MATERIALS, Issue 12 2008
Bhola Nath Pal
Abstract A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2,cm2 V,1 s,1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p-channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p-channel, ambipolar and n-channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6,×,10,3 and 6.3,×,10,3,cm2 V,1 s,1 respectively. When the ZnO layer is very thin, the transistor shows p-channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated. [source]

Ultralow-Threshold Laser Realized in Zinc Oxide

ADVANCED MATERIALS, Issue 16 2009
Hai Zhu
Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8,mA.. [source]

Cd2+/NH3 treatment of Cu(In,Ga)(S,Se)2 thin-film solar cell absorbers: a model for the performance-enhancing processes in the partial electrolyte

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 7 2005
M. Bär
Abstract To obtain highly efficient chalcopyrite-based thin-film solar cells where the conventionally used CdS buffer is replaced by a ZnO layer prepared by the ILGAR (ion layer gas reaction) process, the Cu(In,Ga)(S,Se)2 absorber has to be pretreated in a Cd2+/NH3 solution. Based on the measured characteristics of the pH-value in the Cd2+/NH3 solution during the treatment, a model of the processes in the bath can be established. The conclusions are correlated with results from X-ray-photoelectron and X-ray-excited Auger electron spectroscopy of the Cd2+/NH3 -treated Cu(In,Ga)(S,Se)2 surface, giving an explanation for the observed formation of Cd-compounds on the surface of the absorber. Copyright © 2005 John Wiley & Sons, Ltd. [source]

Crystalline ZnO/SrTiO3 transparent field effect transistor

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008
E. Bellingeri
Abstract We fabricated field effect transistors which are transparent at visible wavelength, by realizing epitaxial ZnO/SrTiO3 heterostructures. High crystalline quality ZnO layers were grown by pulsed laser deposition on 110 oriented strontium titanate single crystals. By conventional photolithographic techniques we realized micrometric sized devices in both bottom-gate stacked layers geometry and planar side-gate configuration. Our transistors show 80% light transmittance, on/off ratios up to 106 and field effect mobilities up to 30 cm2/Vs at 77 K. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Interfacial diffusion and precipitation in rf magnetron sputtered (Mn)ZnO layers

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2006
P. Ruterana
Abstract This report presents TEM results obtained on ZnO layers doped with 10% Mn, deposited at 550 °C and subsequently annealed at 800 °C in air. Mn rich precipitates form inside the doped areas and a Mn containing interface phase appears at the ZnO/sapphire interface, following Mn diffusion and reaction. The interface phase is polycrystalline, some patches have been identified as trimetallic (ZnAlMn)O of cubic structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electro-optical properties of ZnO-BaTiO3 -ZnO heterostructures grown by pulsed laser deposition

ANNALEN DER PHYSIK, Issue 1-2 2004
M. Schubert
Abstract Electro-optical birefringence measurements by spectroscopic ellipsometry on ZnO-BaTiO3 -ZnO heterostructures, grown by pulsed laser deposition on (0001) sapphire are reported. Wurtzite-structure ZnO layers serve as transparent conducting electrodes. An interesting hysteresis is observed, tentatively assigned due to coupling between wurtzite and ferroelectric polarization, and ferroelectric phase transition. [source]