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Wurtzite Crystal Structure (wurtzite + crystal_structure)
Selected AbstractsNanowire-Induced Wurtzite InAs Thin Film on Zinc-Blende InAs SubstrateADVANCED MATERIALS, Issue 36 2009Jiming Bao InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. Induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications. [source] Synthesis and Self-Assembly of Triangular and Hexagonal CdS Nanocrystals,ADVANCED MATERIALS, Issue 24 2005H. Warner CdS nanocrystals with cubic, triangular, and hexagonal geometries have been synthesized using simple wet-chemistry techniques. Analysis of the crystal structures revealed that the cubic nanocrystals have a zinc-blende crystal structure whilst the triangular and hexagonal CdS nanocrystals have a wurtzite crystal structure. When dried, these CdS nanocrystals self-assemble to form complex structures such as linear rods (see Figure), nanoarrows and dimers. [source] Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structurePHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 7 2010B. V. Novikov Abstract Self-standing III,V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au-assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci- ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Optical and magnetic properties of c -oriented ZnCoO filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006Huijuan Zhou Abstract We investigated ZnCoO thin films prepared via sol-gel methods and dip-coating techniques. The Co concentrations range from 0.5% to 5%. The films show the wurtzite crystal structure of ZnO and are highly c -axis oriented grown on the quartz substrates. They have a typical grain size of 20 to 50 nm and a thickness between 300 nm and 1 µm. The fine structures of the Co (3d7) internal absorptions are well resolved, all zero-phonon lines (ZPL) and phonon replica related to the 4T1(F) , 4A2 are observed, demonstrating the good crystalline quality of the layers and the incorporation of the Co2+ on Zn2+ lattice sites. The films show paramagnetic behaviour. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Interface and confined polar optical phonons in spherical ZnO quantum dots with wurtzite crystal structurePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2004Vladimir A. Fonoberov Abstract We derive analytically the interface and confined polar optical-phonon modes for spherical quantum dots with wurtzite crystal structure. While the frequency of confined optical phonons in zincblende nanocrystals is equal to that of the bulk crystal phonons, the confined polar optical phonons in wurtzite nanocrystals are shown to have a discrete spectrum of frequencies different from those in bulk crystal. The calculated frequencies of confined polar optical phonons in wurtzite ZnO quantum dots are found to be in excellent agreement with experimental resonant Raman scattering data. The derived analytical expression for phonon modes can facilitate interpretation of experimental data obtained for ZnO quantum dots. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] |