			Home About us Contact

Voltage Swing (voltage + swing)

Distribution by Scientific Domains

Engineering	50%

Selected Abstracts

Linearity analysis in pipeline A/D converters

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 6 2009
Behnam Sedighi
Abstract A method for estimating integral nonlinearity (INL) in pipeline analog-to-digital converters is presented. In this method, errors in each stage are modeled by an equivalent input-referred gain error and an input-referred nonlinearity. For a switched capacitor implementation, the proposed model predicts the maximum statistical INL in terms of capacitor mismatch and also provides an exact formula for INL in terms of finite gain of operational amplifiers. Using this model, it is proved that a high per-stage resolution reduces the power consumption in low-speed converters, whereas in high-speed circuits 1.5-bit or 2.5-bit stage is more advantageous. It is also shown that when voltage swing is below 1,V, the lower limit for the size of the capacitors is mainly determined by thermal noise rather than by INL. Copyright © 2008 John Wiley & Sons, Ltd. [source]

A 16-GHz CMOS differential Colpitts VCO for DS-UWB and 60-GHz direct-conversion receiver applications

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 10 2007
C.-C. Lee
Abstract A 16-GHz CMOS differential Colpitts VCO fabricated with the 0.18 ,m 1P6M process is presented. The 16-GHz VCO is a good choice for the local oscillator (LO) circuit of the UWB or 60-GHz WPAN direct conversion receiver. The VCO is composed of a PMOS transistor-pair core circuit and two source follower output buffers. The VCO can operate at 16.5 GHz, and the measured phase noise at 1-MHz offset is ,115 dBc/Hz. The power consumption of the VCO core is 12.6 mW. Compared with previous reported works, this VCO has an output power of ,0.9 dBm and about 800-mV output peak-to-peak voltage swing of the VCO core at 16.5 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2489,2492, 2007; Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.22742 [source]

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005
K. Shiojima
Abstract We have demonstrated dual-gate AlGaN/GaN high-electron-mobility transistors on SiC substrates for high-power mixers and examined DC and up-conversion RF measurements with drain-source bias voltages (VDS) to analyze the possible output level. The 0.7 × 300 µm-gate device exhibited the maximum transconductance of 47 mS, maximum RF power of 19.6 dBm and up-conversion gain of 11 dB at 2 GHz when VDS = 15 V. For VDS of over 15 V, the devices occasionally broke down, because, although the device can handle more drain current, but the voltage swing reached the breakdown voltage of about 30 V. These results indicate that a Watt-class output mixer can be easily achieved with this simple dual-gate structure. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
C. K. Wang
Abstract High quality SiO2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D2 lamp as the excitation source. It was found that the interface state density was only 1.1 × 1011 cm,2 eV,1. AlGaN/GaN metal,oxide,semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal,semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO2 layer between AlGaN/GaN and gate metal. With a 1 ,m gate length, it was found that room temperature saturated Ids, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]