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Voltage Gain (voltage + gain)
Selected AbstractsFabrication and evaluation of complementary logic circuits using zinc oxide and pentacene thin film transistorELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 9 2009Hiroyuki Iechi Abstract We fabricated hybrid complementary inverters with n-channel zinc oxide (ZnO) transistors as the n-type inorganic material and p-channel organic transistors using pentacene as the p-type organic material. The complementary inverter exhibited a large voltage gain of 10 to 12 and a cutoff frequency of 0.5 kHz. ZnO thin film transistors show n-type semiconducting properties having field-effect mobility of 2.1×10,3 cm2/Vs. On the other hand, pentacene thin film transistors show p-type semiconducting properties having field-effect mobility of 3.2×10,2 cm2/Vs. We describe basic charge transfer characteristics of ZnO thin films. The results obtained here demonstrate that it is important for the transistor using ZnO to be injected charge from electrode to semiconducting material effectively. © 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(9): 36,42, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10085 [source] Nanoscale Single-Crystal Circuits: Assembly of Nanoscale Organic Single-Crystal Cross-Wire Circuits (Adv. Mater.ADVANCED MATERIALS, Issue 42 200942/2009) Organic single-crystal circuits with versatile functions, such as inverters, NOR, and NAND gate, can be assembled by nanomechanical manipulation of nanowires of CuPc, F16CuPc and SnO2:Sb, report Thomas Bjornholm, Wenping Hu, and co-workers on p. 4234. The circuits show ultralow power consumption (40 pW per logic gate) and high voltage gain. In combination with generic "bottom-up" assembly methods developed for nanowires, this opens new opportunities in organic nanoelectronics and for highly sophisiticated integrated logic circuits [source] A 2.4 GHz CMOS diversity receiver having a soft-start regulator for wake-upMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2010Yong-iL Kwon Abstract An improved diversity receiver having a new regulator for stable power supply in a 0.18 ,m CMOS technology is presented. The regulator with soft-start is implemented to eliminate the battery damages at initial power-up. To reduce the external components, two switches for antenna diversity are integrated in front of LNA on the chip. A stacked inductor technique is adopted to reduce the chip area. The simulation and measurement results show that the soft-start time of the regulator can be controlled by a variable resistor from 200 ,S to 6.2 mS. The front-end (LNA and mixer) can achieve a voltage gain of 33.5 dB, a noise figure (NF) of 3.8 dB, and 23 dB of the isolation between antennas when consuming 3.9 mW with a 1.8 V power supply. The NF includes the loss of a BALUN, BPF, and switches. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 611,615, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25000 [source] A 60-GHz low-noise amplifier for 60-GHz dual-conversion receiverMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2009Yo-Sheng Lin Abstract A 60-GHz-band low-noise amplifier (LNA) using bulk 65-nm CMOS technology is reported. To achieve sufficient gain, this LNA is composed of three cascade common-source stages followed by a cascode output stage. Current-sharing technique is adopted in the second and third stage to reduce power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain over the 57,64-GHz-band of interest. This LNA achieved input return loss (S11) of ,10.6 to ,37.4 dB, voltage gain (AV) of 10.7,18.8 dB, reverse isolation (S12) of ,43.5 to ,48.1 dB, input referred 1-dB compression point (P1dB-in) of ,16.2 to ,20.8 dBm, and input third-order intermodulation point (IIP3) of ,4 to ,7.5 dBm over the 57,64-GHz-band of interest. It consumed only a small DC power of 21.4 mW. In addition, the chip area was only 0.849 × 0.56 mm2, including all the test pads and bypass capacitors. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 885,891, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24200 [source] A low-power V-band CMOS low-noise amplifier using current-sharing techniqueMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 7 2008Hong-Yu Yang Abstract A low-power-consumption 53-GHz (V-band) low-noise amplifier (LNA) using standard 0.13 ,m CMOS technology is reported. To achieve sufficient gain, this LNA is composed of four cascaded common-source stages. Current-sharing technique is adopted in the third and four stages to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain at the design frequency. This LNA achieved voltage gain (AV) of 14 dB, very low noise figure (NF) of 6.13 dB, input referred 1-dB compression point (P1dB-in) of ,20 dBm, and input third-order inter-modulation point (IIP3) of ,9 dBm at 53 GHz. It consumed only a very small dc power of 10.56 mW. In addition, the chip area was only 0.91 × 0.58 mm2, including all the test pads and bypass capacitors. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1876,1879, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23523 [source] DC characteristics and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistorPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009Jeng-Wei Yu Abstract We report selected site lateral growth of crystalline [110] GaN nanowire (NW) with high channel mobility of 1050 cm2/V-s on SiO2/p-Si. This scheme enables photolithographic fabrication of top-gated GaN NW-MOSFET of 60 nm dia. and 2 ,m gate length. Device parameters with gm of 25 ,S, saturation current of 90 ,A, and cut-off frequency fT at 14 GHz have been extracted. In an active load configuration of GaN NW-MOSFET inverter we reported voltage gain of 2 and a high current on/off ratio of 104. These observations suggest promising functional diversification of the GaN NW-MOSFET on the Si-based CMOS platform for the sub-50 nm technology nodes. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] CFTR fails to inhibit the epithelial sodium channel ENaC expressed in Xenopus laevis oocytesTHE JOURNAL OF PHYSIOLOGY, Issue 3 2005G. Nagel The cystic fibrosis transmembrane conductance regulator (CFTR) plays a crucial role in regulating fluid secretion by the airways, intestines, sweat glands and other epithelial tissues. It is well established that the CFTR is a cAMP-activated, nucleotide-dependent anion channel, but additional functions are often attributed to it, including regulation of the epithelial sodium channel (ENaC). The absence of CFTR-dependent ENaC inhibition and the resulting sodium hyperabsorption were postulated to be a major electrolyte transport abnormality in cystic fibrosis (CF)-affected epithelia. Several ex vivo studies, including those that used the Xenopus oocyte expression system, have reported ENaC inhibition by activated CFTR, but contradictory results have also been obtained. Because CFTR,ENaC interactions have important implications in the pathogenesis of CF, the present investigation was undertaken by our three independent laboratories to resolve whether CFTR regulates ENaC in oocytes and to clarify potential sources of previously reported dissimilar observations. Using different experimental protocols and a wide range of channel expression levels, we found no evidence that activated CFTR regulates ENaC when oocyte membrane potential was carefully clamped. We determined that an apparent CFTR-dependent ENaC inhibition could be observed when resistance in series with the oocyte membrane was not low enough or the feedback voltage gain was not high enough. We suggest that the inhibitory effect of CFTR on ENaC reported in some earlier oocyte studies could be attributed to problems arising from high levels of channel expression and suboptimal recording conditions, that is, large series resistance and/or insufficient feedback voltage gain. [source] Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receiversINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2006Y. P. Zhang Abstract This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-,m 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high-band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5-V supply voltage and achieves voltage gains of 14 and 22 dB, input S11 of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006. [source] | ||||||||||