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Vertical Cavity Surface Emitting Lasers (vertical + cavity_surface_emitting_laser)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

The influence of aluminum composition of AlxGa1,xAs in distributed Bragg reflector on surface morphology

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2004
B. Kim
Abstract Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of AlxGa1,xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Green monolithic II,VI vertical-cavity surface-emitting laser operating at room temperature

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2004
C. Kruse
Abstract The realization of a monolithic all II,VI-based vertical cavity surface emitting laser (VCSEL) for the green spectral region is reported. Optically pumped lasing operation was achieved up to room temperature using a planar VCSEL structure. Taking advantage of distributed Bragg-reflectors based on MgS/Zn(Cd)Se superlattices as the low-refractive index material and ZnS0.06Se0.94 layers as the high-index material with a refractive index contrast of ,n = 0.6, a quality factor exceeding Q = 2000 is reached by using only 18 Bragg periods for the bottom DBR and 15 Bragg periods for the top DBR. The threshold power density is 0.32 MW/cm2 at a temperature of 10 K (emission wavelength 498.5 nm) and 1.9 MW/cm2 at room temperature (emission wavelength 502.3 nm). (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2010
T. D. Germann
Abstract A vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator (EOM VCSEL) is fabricated using metal-organic vapor phase epitaxy. 3 dB extinction ratio of the modulator at a very low power consumption and open-eye operation of the EOM VCSEL at 10 Gb/s is demonstrated. The modulation of the 845 nm output is temperature-stable up to 85 °C. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electrical and optical low frequency noises in multimodal vertical cavity surface emitting lasers

LASER PHYSICS LETTERS, Issue 10 2006
F. Principato
Abstract Experimental investigations of the low frequency noise of multimode 780 nm vertical cavity surface emitting lasers are reported. Electrical noise, optical noise and their correlation have been measured in the frequency range 1 Hz,95 kHz. The results show that the main contribution to the electrical noise is located in the distributed Bragg reflector layers of the laser. The optical power and pump current noise sources are strongly correlated below and around the threshold, while are weakly correlated above threshold. It is argued that the noise in the optical power is due to both free injection carrier noise and optical gain fluctuations. (© 2006 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs

LASER PHYSICS LETTERS, Issue 5 2005
V. M. N. Passaro
Abstract In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1,xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general. (© 2005 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]