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UWB Systems (uwb + system)

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Engineering	100%

Selected Abstracts

A compact multilayer diplexer in LTCC substrate using LPF with multiple attenuation poles and wideband BPF

ELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 5 2010
Shimpei Oshima
Abstract Recently, compact wideband BPFs for a UWB system have been studied actively. In this paper we propose a compact diplexer built into an LTCC substrate for a UWB system and 2.4-GHz wireless systems. First, a wideband BPF for a UWB system and an LPF with multiple attenuation poles for 2.4-GHz wireless systems are described. Second, we design matching circuits of a common port to retain the basic performance of both the BPF and the LPF. Third, in accordance with the results of the study, we design a compact diplexer built into an LTCC substrate. Finally, we verify the effectiveness of the proposed method by experiments. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(5): 24,32, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10210 [source]

A compact pentagonal monopole antenna for portable UWB systems

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 10 2010
Paulbert Thomas
Abstract Design of a compact microstrip-fed ultra-wideband antenna suitable for USB dongle and other such space constraint applications is presented. The structure consists of a pentagonal monopole element and a modified ground plane that gives an impedance bandwidth from 2.8 to 12 GHz. Radiation patterns are stable and omni-directional throughout the band with an average gain of 2.84 dBi. The antenna occupies only 11 × 30 mm2 on FR4 substrate with permittivity 4.4. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2390,2393, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25449 [source]

A fully integrated ultra-low power CMOS transmitter module for UWB systems

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 10 2009
Tao Yuan
Abstract A fully integrated CMOS ultra-wideband (UWB) transmitter module is proposed for UWB applications. The transmitter module consists of a band-notched UWB antenna and a transmitter IC which integrates a pulse generator, a gating signal generator and driver amplifiers (DAs). The drive amplifier uses a two-stage amplifier,a Class-E amplifier and a Class-A amplifier with switch control, to significantly reduce power consumption (522 ,W/20 Mbps). Fabricated using a 0.18-,m CMOS process, the generated pulse then passes through the DA, which not only drives the antenna but also shapes the generated digital signal to meet the Federal Communications Commission spectral mask specification. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2318,2323, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24632 [source]

Study of a band-notched double printed dipole antenna

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2008
Fa-Jia Wang
Abstract In this article, a double-printed dipole antenna with band-notched function for UWB applications is proposed and investigated. The band-notched characteristic is achieved by inserting two U-shaped slots on the dipole. Experimental and numerical results show that the proposed antenna meets the requirement of 3.1,10.6 GHz UWB systems with VSWR < 2, while avoiding the interference with the 5 GHz WLAN band. Transmitting antenna transfer function, receiving antenna transfer function, and antenna system function are used to describe the antenna performance. The impulse responses in time domain were calculated using inverse Fourier transform. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2986,2989, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23816 [source]

A modified high linearity CMOS micromixer for UWB systems

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 6 2008
Shui-Yang Lin
Abstract A CMOS Micromixer for 3,5 GHz UWB receivers is presented in this article. Modified class-AB input stage is developed to improve the LO/RF, LO/IF isolation and to reduce the mixer's noise figure. A LO buffer and an output buffer are integrated in it for on-wafer testing. Our measurement results show that, with a 50-, output loaded, it can achieve 5-dB power conversion gain, 12.5 dB SSB NF, and 4 dBm IIP3. The mixer-core consumes 2.6 mA of current from 1.8-V power supply, and the on-chip area occupied by this mixer with pads excluded is only about 350 × 400 ,m2. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1463,1466, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23395 [source]