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UV Photodetectors (uv + photodetector)

Distribution by Scientific Domains
Physics and Astronomy40%

Selected Abstracts

GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector,

ADVANCED MATERIALS, Issue 2 2009
Hui Wu
Nitride nanofibers have been synthesized based on a simple electrospinning technique for the first time. No catalysts or templates are needed in this new synthetic method. Highly oriented GaN nanofiber arrays, as well as a high-performance UV photodetector based on single GaN nanofiber assembled FET devices, can be facilely fabricated using this technique. Precise doping of other elements into the GaN nanofibers is easy by this solution-based synthetic method. [source]

Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors

ADVANCED MATERIALS, Issue 20 2009
Xiaosheng Fang
Single-crystalline ZnS nanobelts with sharp ultraviolet-light emission (,337,nm) at room temperature have been assembled as UV Sensors. The high spectral selectivity, combined with high photosensitivity and fast response time, justifies the effective utilization of the present ZnS nanobelts as "visible-light-blind" UV photodetectors in different areas. [source]

High performance Schottky UV detectors (265,100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003
H. Miyake
Abstract A high responsivity spectrum in the near ultraviolet (UV) and the vacuum UV (VUV) region was realized using Schottky UV detectors consisting of Al0.5Ga0.5N on an AlN epitaxial layer. The cut-off wavelength of AlGaN UV detectors was 4.7 eV (265 nm), a value that corresponds to the band gap of Al0.5Ga0.5N. The contrast of responsivity between the near UV and the visible was about 104. The GaN Schottky detector hads a high responsivity region in the near-UV from 3.4 to 5.0 eV (250,360 nm), whereas the AlGaN UV detector had a high responsivity in the UV,VUV region from 4.7 to 12.4 eV (100,265 nm). From these results, the fabricated AlGaN-based UV photodetectors can likely be used in detectors for the UV,VUV region. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

The performance of AlGaN solar blind UV photodetectors: responsivity and decay time

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2006
G. Cherkashinin
Abstract The responsivity and the decay time of AlGaN solar blind UV-detectors have been studied. The photodetectors have shown a good spectral responsivity in a narrow spectral range (220 < , < 300 nm) and a short time response with the best estimated characteristic time constant of , , 30 ms measured at room temperature. Possible mechanisms responsible for the persistent photoconductivity (PPC) effect in AlxGa1,xN (x = 0.51) are analyzed. A shape of the spectral response as a function of the applied voltage is analyzed in the frameworks of the space-charge limited current model. It has been shown that the main source of PPC is traps above the Fermi level. PPC occurs when the density of free carriers equals the density of the traps. The model attributing PPC to the spatial separation of the photoexcited electrons and holes by the macroscopic potential barrier is not supported by our photocurrent studies. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]