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Transparent Electronics (transparent + electronics)

Distribution by Scientific Domains
Polymers and Materials Science66%

Selected Abstracts

Preface: phys. stat. sol. (a) 205/8

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008
Guest Editor Elvira Fortunato
Advances in Transparent Electronics: From Materials to Devices II This issue of physica status solidi contains selected papers presented in Symposium I "Advances in Transparent Electronics: From Materials to Devices II" at the European Materials Research Society Spring Meeting held in Strasbourg, France, from 28 May to 1 June 2007. This was the second meeting in Europe covering this topic. It was attended by scientists from 33 different countries, with special emphasis to the Republic of South Korea and Japan (20% and 10%, respectively, of the total of papers presented). The symposium programme consisted of 9 invited talks, 45 oral presentations and 122 poster presentations, in total 176 contributions, from which 60 were selected for publication in the proceedings, representing nearly 35% of the submitted communications. Topics ranging from the fundamental understanding of physical phenomena to materials and devices have been covered, with special emphasis on the following ones: ,,Materials and processing for transparent electronics ,,Characterization and modelling ,,New devices (nano, micro and macro) ,,New applications The success of this symposium was the result of the contributions of many dedicated people. It is a pleasure for me to thank the symposium organizers (H. Hosono, Japan, J. Wager, USA, G. Kiriakidis, Greece, and S. Y. Lee, Korea) for their availability and help during the preparation and follow up of this symposium as well as all the individual referees, who donated their time to help making this a successful and scientific strong contribution for the international community on transparent electronics. I also would like to thank the two voluntary symposium assistants (P. Barquinha and G. Gonçalo) who helped before, during and after the symposium. Since the work is not limited to what was done before and during the conference, I also have to emphasize a detailed, delicate and long work that has been done after the conference was over, in close cooperation with Prof. Martin Stutzmann and Dr. Stefan Hildebrandt, for the edition of this special issue. I also would like to thank the E-MRS staff (C. Kocher and S. Schoeffter) for the unlimited time, energy and professionalism given for the success of this symposium. Without their assistance the symposium would not have been the success that it was. I also gratefully acknowledge the financial support of our main sponsors who made the symposium possible: ,,FCT-UNL, Portugal ,,Hewlett-Packard, Ireland ,,Horiba Jobin Yvon, France ,,Canon, Japan [source]

Transparent Photo-Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

ADVANCED FUNCTIONAL MATERIALS, Issue 5 2009
Min Suk Oh
Abstract Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high-voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low-voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo-stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n- and p-channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self-assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3,V. [source]

Nanoscale Conducting Oxide Writing: Nanoscale Writing of Transparent Conducting Oxide Features with a Focused Ion Beam (Adv. Mater.

ADVANCED MATERIALS, Issue 6 2009
6/2009)
A conductive atomic force microscopy tip probes an embedded, optically transparent, electrically conducting oxide nanowire that was patterned on an indium oxide substrate using focused ion beam implantation. The nanowire is 160 nm wide, 7 nm deep, and theoretically limitless in length, connectivity, and shape. Nanowires of this type have potential application as interconnects in transparent electronics. Further details can be found in the article by Tobin Marks, Mark Hersam and co-workers on p.721. [source]

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes,

ADVANCED MATERIALS, Issue 5 2009
Sunkook Kim
Fully transparent thin-film transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs could be attractive candidates for future flexible or transparent electronics. [source]

Preface: phys. stat. sol. (a) 205/8

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008
Guest Editor Elvira Fortunato
Advances in Transparent Electronics: From Materials to Devices II This issue of physica status solidi contains selected papers presented in Symposium I "Advances in Transparent Electronics: From Materials to Devices II" at the European Materials Research Society Spring Meeting held in Strasbourg, France, from 28 May to 1 June 2007. This was the second meeting in Europe covering this topic. It was attended by scientists from 33 different countries, with special emphasis to the Republic of South Korea and Japan (20% and 10%, respectively, of the total of papers presented). The symposium programme consisted of 9 invited talks, 45 oral presentations and 122 poster presentations, in total 176 contributions, from which 60 were selected for publication in the proceedings, representing nearly 35% of the submitted communications. Topics ranging from the fundamental understanding of physical phenomena to materials and devices have been covered, with special emphasis on the following ones: ,,Materials and processing for transparent electronics ,,Characterization and modelling ,,New devices (nano, micro and macro) ,,New applications The success of this symposium was the result of the contributions of many dedicated people. It is a pleasure for me to thank the symposium organizers (H. Hosono, Japan, J. Wager, USA, G. Kiriakidis, Greece, and S. Y. Lee, Korea) for their availability and help during the preparation and follow up of this symposium as well as all the individual referees, who donated their time to help making this a successful and scientific strong contribution for the international community on transparent electronics. I also would like to thank the two voluntary symposium assistants (P. Barquinha and G. Gonçalo) who helped before, during and after the symposium. Since the work is not limited to what was done before and during the conference, I also have to emphasize a detailed, delicate and long work that has been done after the conference was over, in close cooperation with Prof. Martin Stutzmann and Dr. Stefan Hildebrandt, for the edition of this special issue. I also would like to thank the E-MRS staff (C. Kocher and S. Schoeffter) for the unlimited time, energy and professionalism given for the success of this symposium. Without their assistance the symposium would not have been the success that it was. I also gratefully acknowledge the financial support of our main sponsors who made the symposium possible: ,,FCT-UNL, Portugal ,,Hewlett-Packard, Ireland ,,Horiba Jobin Yvon, France ,,Canon, Japan [source]