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Titanate Thin Films (titanate + thin_film)
Selected AbstractsControl of Crystal Orientation and Piezoelectric Response of Lead Zirconate Titanate Thin Films Near the Morphotropic Phase BoundaryJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2002Ken-ichi Kakimoto PbZr0.53Ti0.47O3 (PZT) thin films with various preferred crystallographic orientations were synthesized on various substrates using pulsed laser deposition techniques. Larger piezoelectric displacement, which involved the bending vibration of the PZT film/substrate, was observed in randomly oriented PZT thin film than that in (100)- and (111)-preferred texture films. This result was discussed by correlation with the number of effective spontaneous polarization axes in the morphotropic phase boundary of the PZT system. Moreover, polarization fatigue was found to lower the electric-field-induced displacement significantly, indicating a large contribution of ferroelectric domain motion to the piezoelectric response of PZT thin films under bipolar drive. [source] Lead Zirconate Titanate Thin Films on Base-Metal Foils: An Approach for Embedded High-Permittivity Passive ComponentsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 10 2001Jon-Paul Maria An approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb0.85La0.15(Zr0.52Ti0.48)0.96O3, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 ,m thick. Sputter-deposited nickel top electrodes completed the all-base-metal capacitor stack. After high-temperature nitrogen-gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base-metal foils remained flexible. The capacitance density was 300,400 nF/cm2, and the loss tangent was 0.01,0.02 over a frequency range of 1,1000 kHz. These properties represent a potential improvement of 2,3 orders of magnitude over currently available embedded capacitor technologies for polymeric packages. [source] Effect of lanthanum substitution on the Raman spectra of barium titanate thin filmsJOURNAL OF RAMAN SPECTROSCOPY, Issue 2 2007P. S. Dobal Abstract Thin films of Ba1,xLaxTiO3 on platinum substrates were synthesized using the sol,gel method for x values of 0.0, 0.03, 0.05, and 0.10, and the effect of trivalent La3+ substitution on the structural and dielectric properties was studied. Using X-ray diffraction, structural analysis of these compositions revealed a slight increase in the tetragonal distortion of the unit cell with increase in La content. Accordingly, an increase in the tetragonal to cubic transition temperature TT/C was detected by temperature-dependent Raman spectroscopy in the range of 70,500 K. Unlike the results from Raman scattering for the La-doped BaTiO3 films, the dielectric measurements showed broad and diffused dielectric maxima, making the estimation of the transition temperature merely qualitative. Copyright © 2006 John Wiley & Sons, Ltd. [source] Atomic Layer Deposition of BaTiO3 Thin Films,Effect of Barium Hydroxide FormationCHEMICAL VAPOR DEPOSITION, Issue 5 2007M. Vehkamäki Abstract Barium titanate thin films are grown by atomic layer deposition (ALD) at 340,°C from barium cyclopentienyl and titanium methoxide precursors. H2O is used as the oxygen source. Binary reactions of Ba(tBu3C5H2)2 and H2O are first studied separately in BaO deposition and are found to result in a hydration/dehydration cycle, which is strongly influenced by the process temperature. Self-limiting growth of amorphous barium titanate films becomes possible when Ti(OMe)4 , H2O growth cycles are mixed as well as possible with Ba(tBu3C5H2)2 , H2O cycles. The as-deposited amorphous films are crystallized by post-deposition annealing at 600,°C. Permittivities of 15 and 70 are measured for as-deposited and post-deposition annealed films, respectively. A charge density of 1.9 ,C cm,2 (equivalent oxide thickness of 1.8,nm) and leakage current density ,,1,×,10,7,A,cm,2 were achieved at 1,V bias with a 32,nm thick Ba,Ti,O film in a Pt electrode stack annealed at 600,°C. [source] | ||||||||||