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Thermoelectric Power (thermoelectric + power)

Distribution by Scientific Domains
Physics and Astronomy71%

Selected Abstracts

Metal,Insulator Transition and Large Thermoelectric Power of a Layered Palladium Oxide: PbPdO2.

CHEMINFORM, Issue 17 2005
T. C. Ozawa
Abstract For Abstract see ChemInform Abstract in Full Text. [source]

Comment on "Transport Properties of Tl5Te3 Single Crystals" [phys. stat. sol. (a) Vol.

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2007
329 (2002)], No.
Abstract Recently, Gamal et al. [phys. stat. sol. (a) 191, 322 (2002)] reported the results of electrical conductivity, Hall effect and thermoelectric power (TEP) measurements on Tl5Te3 single crystals. The samples used in the study were p-type semiconductors. From the experimental data for the temperature dependence of TEP, Gamal et al. determined the values of 1.6 × 10,41 kg and 1.5 × 10,40 kg, respectively, for the effective masses of electrons and holes in p-type Tl5Te3, which are about ten orders of magnitude smaller than the free electron mass, 9.11 × 10,31 kg. We argue that the anomalously small values obtained for the effective mass of charge carriers in Tl5Te3 have no physical significance. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Study of the electrical conductivity and thermoelectric power of In2Te5 single crystals

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2003
M. M. Nassary
Abstract In the present study, single crystals of defect semiconductor In2Te5 were grown by the Bridgman technique. An investigation was made on the Hall effect, electrical conductivity and thermoelectric power of In2Te5 monocrystal in the temperature ranging from 200 to 500 K. The investigated samples were P-type conducting. The Hall coefficient yields a room-temperature carrier concentration of (7.7 × 109 cm,3). The bandgap was found to be (,Eg = 0.993 eV). Hence, a combination of the electrical conductivity and Hall effect measurements enable us to study the influence of temperature on the Hall mobility (,) and to discuss the scattering mechanism of the charge carriers, also the present investigation involves thermoelectric power measurements of In2Te5 single crystal: these measurements enable us to determine many physical parameters such as carriers mobilities, effective masses of free charge carriers (mp*, mn*, diffusion coefficients (Dp, Dn) and diffusion lengths as well as the relaxation time (,p, ,n). (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electronic properties and phase transitions in Si, ZnSe, and GaAs under pressure cycling up to 20,30 GPa in a high-pressure cell

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2009
Sergey V. Ovsyannikov
Abstract An automated high-pressure setup employing anvil-type cells is applied for investigation of phase transitions and elec- tronic properties (the thermoelectric power (Seebeck effect), the electrical resistivity) of silicon, zinc selenide and gal lium arsenide under pressure cycling within the range of 0,20(30) GPa. The "correlation" dependencies of a pressure value of the semiconductor,metal transition in Czochralski-grown silicon (Cz-Si) on the concentrations of both carriers and residual interstitial oxygen are discussed. In all Si samples a decompression of the high-pressure metal phase produces the semimetal p-type phases: the rhombohedral r8 (Si-XII) and the body-centred cubic bc8 (Si-III) lattices. Re- pressurization cycles reveal two features in the semimetal phase, near 2 GPa and 5 GPa. The transitions into the metal phase at higher pressure resemble those in pristine silicon. For ZnSe and GaAs, it is found that decompression from the high-pressure phases (NaCl and Cmcm, respectively) can follow different paths, producing the zincblende, the cinnabar and the wurtzite lattices. Advantages of the characterization method are discussed, in comparison with both the traditional techniques (X-ray diffraction, Raman spectroscropy, etc.) and the more recent ones (such as nanoindentation). (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Influence of P,T pre-treatment on thermopower of Czochralski-grown silicon at high pressure

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 14 2004
Vladimir V. Shchennikov
Abstract For the first time the thermoelectric power of high-pressure phases of Czochralski-grown silicon (Cz-Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and temperature (450,650 °C) pre-treatment on thermoelectric properties of high-pressure phases of Si with tetragonal, orthorhombic and simple hexagonal structures is discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

ChemInform Abstract: Structure and Physical Properties of the Layered Pnictide-Oxides: (SrF)2Ti2Pn2O (Pn: As, Sb) and (SmO)2Ti2Sb2O.

CHEMINFORM, Issue 32 2010
R. H. Liu
Abstract The title compounds are prepared by solid state reactions using SrPn (Pn: As, Sb), SrF2, Sm2O3, TiO2, and Ti as starting materials (1000,1150 °C, 50 h) and characterized by powder XRD, resistivity, susceptibility, Hall coefficient, thermoelectric power, and heat capacity measurements. [source]