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Temperature Growth (temperature + growth)

Distribution by Scientific Domains
Physics and Astronomy83%

Kinds of Temperature Growth

  • low temperature growth
    		•

    Selected Abstracts

    Low Temperature Growth of Photoactive Titania by Atmospheric Pressure Plasma

    PLASMA PROCESSES AND POLYMERS, Issue 9 2009
    John L. Hodgkinson
    Abstract Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200,°C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275,°C produced crystalline films that were photocatalytically active. When annealed at 300,°C the photoactivity was greater than that of commercially available "self-cleaning" titania films. The effects of the different precursors, annealing times and temperatures on the crystallinity and photoactivity are discussed. [source]

    Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
    A. Nishii
    Abstract Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 , 300 °C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 °C showed low resistivity (,2 × 10,4 , cm) and high transmittance in the visible region (,85%). (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Properties of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films grown by molecular beam epitaxy

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008
    Takayoshi Oshima
    Abstract A series of Ga2O3 -based (Inx Ga1,x)2O3 alloy thin films have been grown on c-plane sapphire substrates with a thin Ga2O3 buffer layer by plasma-assisted molecular beam epitaxy. At growth temperatures of 700 °C and higher, even with a slight inclusion of In2O3 to Ga2O3, for example, the film of (In0.08Ga0.92)2O3, exhibited a rough surface and degraded transmission spectrum resulting from phase separation of In2O3. Due to low temperature growth at 600 °C, however, the phase separation was suppressed for the In composition up to 35%, which was confirmed by X-ray diffraction measurement, and the films exhibited high transmittance over 85% with sharp absorption edges. The bandgap could be tuned form 5.0 to 4.0 eV. The results encourage the application of (Inx Ga1,x)2O3 thin films in short-wavelength optical devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Growth and characterization of InCrN and (In,Ga,Cr)N

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
    S. Kimura
    Abstract InCrN and a new quaternary alloy (In,Ga,Cr)N were synthesized by molecular beam epitaxy. Their structural properties were studied with X-ray diffraction and X-ray absorption fine structure (XAFS). It was found that low temperature growth enables the growth of InCrN and (In,Ga,Cr)N with higher Cr contents, while they were not crystallized at higher substrate temperature (450 °C). XAFS studies suggest that Cr atoms substitute on cation sites and no trace of locally formed secondary phases, such as Cr cluster, CrN (NaCl type) and Cr2N, in the grown InCrN and (In,Ga,Cr)N layers. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    High temperature growth of AlN film by LP-HVPE

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
    K. Tsujisawa
    Abstract AlN films were grown on AlN/sapphire templates at 1400,1500 °C using low-pressure hydride vapor phase epitaxy (LP-HVPE). Compared to the step-flow growth of AlN film at 1200 °C with growth rate of 2.1 ,m/h, AlN films with atomic steps were obtained at 1400,1500 °C even with high growth rate. For the AlN film grown at 1450 °C with growth rate of 14.3 ,m/h, the RMS value is 0.75 nm and the FWHM values of (0002) and (10-12) X-ray rocking curve (XRC) are 351 and 781 arcsec, respectively. Since the FWHM value of (10-12) XRC for the AlN/sapphire template is 1492 arcsec, the crystal quality of HVPE-grown AlN is greatly improved compared with the AlN/sapphire template, which is also confirmed by TEM observation. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphire for the high temperature growth of AlN

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
    K. Akiyama
    Abstract The thermal stability of (0001) sapphire was investigated at atmospheric pressure using the in situ gravimetric monitoring (GM) method. The weight change of a sapphire substrate was monitored at various hydrogen partial pressures in carrier gas (P) at temperatures over 1200 °C. Although the sapphire substrate was stable up to 1450 °C in an inert carrier gas (P = 0.0 atm), sapphire decomposition started to occur at 1200 °C in H2 carrier gas (P = 1.0 atm). Moreover the activation energy and order of reaction for sapphire surface decomposition changed at approximately 1300 °C. These results indicate that the rate-limiting reaction for sapphire decomposition shifts near 1300 °C. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]