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Technology Process (technology + process)

Distribution by Scientific Domains
Physics and Astronomy40%

Selected Abstracts

Interventions (Solutions) Usage and Expertise in Performance Technology Practice: An Empirical Investigation

PERFORMANCE IMPROVEMENT QUARTERLY, Issue 3 2004
Darlene M. Van Tiem
ABSTRACT Performance technology (PT) is complex, drawing theory from instructional design, organizational development, communications, industrial psychology, and industrial engineering to name a few. The Standards of Performance Technology developed for the certified performance technology designation codified the processes used in the practice of performance improvement. The Human Performance Technology (HPT) Model of the International Society for Performance Improvement illustrates the Standards for the Performance Technology process, including the selection, design, and implementation of appropriate performance interventions. Research exists on specific PT interventions, such as problem solving, feedback, or job analysis. This foundational study considers intervention usage within organizations and the expertise of performance technologists. Findings indicate that years of experience in the field or related field is positively correlated to expertise. Some alignment was found between higher ranked PT expertise and higher ranked intervention usage within those organizations. [source]

Influence of Mg/Er co-doping on the principal laser parameters of LiNbO3 crystals

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 7 2007
Liang Sun
Abstract Mg: Er: LiNbO3 crystals were grown by the Czochralski technique with various concentrations of MgO = 2 mol%, 4 mol%, 6 mol% and the fixed concentration of Er2O3= 1 mol% in the melt, and the 8 mol%Mg: 1 mol%Er: LiNbO3 crystal was fabricated by the Czochralski technique with special technology process. The crystals were treated by polarization, reduction and oxidation. The segregation coefficients of Mg2+ and Er3+ in Mg: Er: LiNbO3 crystals were measured by X-ray fluorescence spectrograph, as well as the crystal's defect structure and optical properties were analyzed by the UV-Vis, IR and fluorescent spectroscopy. The pump wavelength and the surge wavelength were determined. Using m-line method tested optical damage resistance of those crystals, the results show that photodamage threshold of Mg: Er: LiNbO3 crystals are higher than that of Er: LiNbO3 crystal, and the oxidation treat could enhance the photodamage resistant ability of crystals while the reduction treat could depress the ability. The optical damage resistance of 8 mol%Mg: 1 mol%Er: LiNbO3 crystal was the strongest among the samples, which was two orders magnitude higher than that of 1 mol%Er: LiNbO3 crystal. The dependence of the optical properties on defect structure of Mg: Er: LiNbO3 crystals was discussed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

A dc I,V model for short-channel polygonal enclosed-layout transistors

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 2 2009
Paula López
Abstract Despite the demonstrated radiation immunity of gate-enclosed layout transistors in deep submicron CMOS technologies, there is a significant lack of a thorough theoretical study addressing fundamental design issues on this kind of transistors. In this paper we propose a physical dc I,V model for short-channel polygonal-shape enclosed-layout transistors in both the linear and saturation regions of operation accounting for second-order effects such as depletion region non-uniformity, carrier velocity and channel length modulation. The impact of this layout style on the driving capability of the devices is also investigated. Experimental results based upon a fabricated NMOS test chip containing these devices in a standard 0.18µm CMOS technology process are presented. The comparison of the theoretical prediction with the experimental data show close agreement. Copyright © 2008 John Wiley & Sons, Ltd. [source]

A binary-based on-chip CNN solution for pixel-level snakes

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 4 2006
V. M. Brea
Abstract This paper introduces a binary-based on-chip cellular neural network (CNN) solution for pixel-level snakes. Every cell in the array comprises circuitry for B/W and grey-scale processing. The B/W processing is performed with a positive range high-gain discrete-time (DT)CNN model with 1-bit of programmability. The grey-scale processing is executed on a dedicated sub-cell. The design efforts are mainly focused on area consumption and processing speed. The result is a chip with a resolution of 9 × 9 cells in a 0.18 µm CMOS technology process and a density of more than 700cells/mm2. Simulations at schematic level lead to a time of less than 100ns for every DTCNN step. The peak power dissipation is kept at a few watts in a hypothetical chip of 128 × 128 cells. Copyright © 2006 John Wiley & Sons, Ltd. [source]

All fiber Yb-Ho pulsed laser

LASER PHYSICS LETTERS, Issue 2 2009
A.S. Kurkov
Abstract For the first time we have suggested and realized passive Q-switched Yb-doped fiber laser with a saturable absorber based on Ho-doped fiber laser. The pulse duration was of 250 ns, the pulse energy , 70 , J, the peak power , 300 W. The laser is perspective for technology processes. Possible ways of laser characteristics improving are discussed. (© 2009 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]