Bandgap Semiconductors (bandgap + semiconductor)

Distribution by Scientific Domains


Selected Abstracts


Ab-initio investigation of structural, electronic and optical properties for three phases of ZnO compound

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 9 2007
Z. Charifi
Abstract The complex density-functional theory (DFT) calculations of structural, electronic and optical properties for the three phases: wurtzite (B4), zincblende (B3) and rocksalt (B1) of ZnO compound have been reported using the full-potential linearized-augmented plane-wave (FP-LAPW) method as implemented in the WIEN2k code. We employed both the local-density approximation (LDA) and the generalized-gradient approximation (GGA), which is based on exchange,correlation energy optimization to calculate the total energy. Also, we have used the Engel,Vosko GGA formalism, which optimizes the corresponding potential for band-structure calculations. The 3d orbitals of the Zn atom were treated as the valence band. The calculated structural properties (equilibrium lattice constant, bulk modulus, etc.) of the wurtzite and rocksalt phases are in good agreement with experiment. The B4 structure of ZnO is found to transform to the B1 structure with a large volume collapse of about 17%. The phase transition pressure obtained by using LDA is about 9.93 in good agreement with the experimental data. B1-ZnO is shown to be an indirect bandgap semiconductor with a bandgap of 1.47 eV, which is significantly smaller than the experimental value (2.45 0.15 eV). While B3 and B1 phases have direct bandgap semiconductors with bandgaps 1.46 and 1.57 eV, respectively. Also, we have presented the results of the effective masses. We present calculations of the frequency-dependent complex dielectric function , (,) and it zero-frequency limit ,1(0). The optical properties of B4 phase show considerable anisotropic between the two components. The reflectivity spectra has been calculated and compared with the available experimental data. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


X-ray excited optical luminescence from crystalline silicon

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 9 2009
Paul Gundel
Abstract Synchrotron based X-ray excited optical luminescence (XEOL) has been measured with many direct bandgap semiconductors. We present XEOL measurements on crystalline silicon (Si), obtained despite of its indirect bandgap and the consequently low luminescence efficiency. Spectra of monocrystalline and multicrystalline (mc) Si at room temperature are compared to theoretical spectra. A possible application in the synchrotron-based research on mc-Si is exemplified by combining XEOL, X-ray fluorescence (XRF) spectroscopy, photoluminescence (PL) spectroscopy, and microscope images of grain boundaries. This approach can be utilized to investigate the recombination activity of metal precipitates, to analyze areas of different lifetimes on mc-Si samples and to correlate additional material parameters to XRF measurements. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Ab-initio investigation of structural, electronic and optical properties for three phases of ZnO compound

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 9 2007
Z. Charifi
Abstract The complex density-functional theory (DFT) calculations of structural, electronic and optical properties for the three phases: wurtzite (B4), zincblende (B3) and rocksalt (B1) of ZnO compound have been reported using the full-potential linearized-augmented plane-wave (FP-LAPW) method as implemented in the WIEN2k code. We employed both the local-density approximation (LDA) and the generalized-gradient approximation (GGA), which is based on exchange,correlation energy optimization to calculate the total energy. Also, we have used the Engel,Vosko GGA formalism, which optimizes the corresponding potential for band-structure calculations. The 3d orbitals of the Zn atom were treated as the valence band. The calculated structural properties (equilibrium lattice constant, bulk modulus, etc.) of the wurtzite and rocksalt phases are in good agreement with experiment. The B4 structure of ZnO is found to transform to the B1 structure with a large volume collapse of about 17%. The phase transition pressure obtained by using LDA is about 9.93 in good agreement with the experimental data. B1-ZnO is shown to be an indirect bandgap semiconductor with a bandgap of 1.47 eV, which is significantly smaller than the experimental value (2.45 0.15 eV). While B3 and B1 phases have direct bandgap semiconductors with bandgaps 1.46 and 1.57 eV, respectively. Also, we have presented the results of the effective masses. We present calculations of the frequency-dependent complex dielectric function , (,) and it zero-frequency limit ,1(0). The optical properties of B4 phase show considerable anisotropic between the two components. The reflectivity spectra has been calculated and compared with the available experimental data. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Preface: phys. stat. sol. (c) 1/10

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2004
Eun-Kyung Suh
The Fifth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) was held in Gyeongju, Korea from 15,19 March 2004. Gyeongju, the ancient capital of the thousand-year Silla kingdom (57 B.C. to 935 A.D.) provided additional pleasure to the participants as an exceptional open-air museum with antique treasures scattered all around the city. During the last decade we have witnessed remarkable developments in wide-gap semiconductors and light emitting devices in the spectral range from the visible to deep UV. The purpose of the Symposium was to provide a forum for intensive discussion on the issues and main progress especially in optoelectronic devices, material growth and characterization, and quantum structures of wide bandgap semiconductors. A total of 243 papers including 220 contributed and 23 invited ones were presented and discussed by 487 participants from 17 countries world-wide. Among them, 154 manuscripts were submitted and reviewed by the usual evaluation process of physica status solidi. Some were rejected or withdrawn, and finally 139 papers are published in the special issues of physica status solidi (a), (b), and (c). We gratefully acknowledge the referees for their careful review. The papers are grouped into 7 categories. The subheadings and the number of papers in each are as follows: Optoelectronic devices, 43; Growth and characterization, 45; Nano and quantum structures, 21; Contacts, 8; Zinc oxide, 9; Indium nitride and indium rich InGaN, 6; Others, 7. The special session of the Symposium, "The LED Highlight", designed partially to meet the challenging targets of the technology, i.e., energy savings and clean environment preservation, drew much attention and is edited as a special coloured section in this issue. The next symposium is scheduled for Montpellier, France, in 2006. We wish the organizers of that symposium the best of luck and hope to see all of the ISBLLED-2004 participants again at ISBLLED-2006. ISBLLED-2004 was sponsored by The Research Society for the Wide-gap Semiconductors, Korean Physical Society, Office of Naval Research, Korea Science and Engineering Foundation, Korea Research Foundation, Korea Association for Photonics Industry Development, Asian Office of Aerospace Research and Development, and Korea Photonics Technology Institute. We would like to thank Ms. E. S. Hwang for her devotion to the preparation and the Proceedings of the symposium including the manuscript handling for publication. [source]


A Series of Novel Organically Templated Germanium Antimony Sulfides

CHEMISTRY - AN ASIAN JOURNAL, Issue 8 2010
Mei-Ling Feng Dr.
Abstract A series of novel organically templated germanium antimony sulfides have been solvothermally synthesized and structurally, thermally, and optically characterized. The compound [Me2NH2]6[(Ge2Sb2S7)(Ge4S10)] (1) features two distinct tetranuclear [Ge2Sb2S7]2, and [Ge4S10]4, isolated clusters. The compound [(Me)2NH2][DabcoH]2[Ge2Sb3S10] (2) (Dabco=triethylenediamine) features a 1D-[Ge2Sb3S10]n3n, ribbon constructed with two [GeSbS5]n3n, chains bridged by Sb3+ ion in , -SbS4 configuration. Compounds [M(en)3][GeSb2S6] (M=Ni (3), Co (4) en=ethylenediamine) feature the unique 2D grid layer structures of [GeSb2S6]n2n,. The compound [(Me)2NH2]2[GeSb2S6] (5) previously reported by us features a 3D chiral microporous structure with the chiral channels. The optical absorption spectra indicate that all the compounds are wide bandgap semiconductors. Thermal stabilities of these compounds have been investigated by thermogravimetric analyses (TGA). [source]