Home  About us  Contact
 

Surface-emitting Lasers (surface-emitting + laser)

Distribution by Scientific Domains
Physics and Astronomy63%
Engineering36%

Kinds of Surface-emitting Lasers

  • vertical-cavity surface-emitting laser
    		•

    Selected Abstracts

    Miniaturization of a Laser Doppler Blood Flow Sensor by System-in-Package Technology: Fusion of an Optical Microelectromechanical Systems Chip and Integrated Circuits

    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, Issue 2 2010
    Wataru Iwasaki Member
    Abstract We have developed the first and the smallest blood flow sensor composed of integrated circuits (ICs) fused with an optical microelectromechanical systems (MEMS) chip using system-in-package (SiP) technologies for application in a healthcare monitoring system. The probe of this blood flow sensor consists of three layers, and the optical MEMS chip is stacked as the top layer. Through silicon via (TSV), vertical-cavity surface-emitting laser (VCSEL) and cavities enable wafer-level packaging of the optical MEMS chip. The other two layers consisting of ICs are highly densified by SiP technology, and the volume of the probe is miniaturized to about one-sixth of our previously reported integrated laser Doppler blood flowmeter, an MEMS blood flow sensor to which SiP technology was not applied. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [source]

    Simulation of 4 × 4 light coupling to a single-mode fiber

    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 2 2005
    Hen-Wai Tsao
    Abstract The novel design of a microlens array is presented for the analysis of a 4 × 4 nanoscale vertical-cavity surface-emitting laser (VCSEL) array, which launches parallel light to a single-mode fiber (SMF) with a length of 100 cm. These results are useful for realization of high-density information storage and information transfer. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 103,106, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20914 [source]

    Low thermal resistance, high-speed 980 nm asymmetric intracavity-contacted oxide-aperture VCSELs

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2009
    Y. M. Song
    Abstract We demonstrated high-speed characteristics of an oxide-aperture vertical-cavity surface-emitting laser (VCSEL) with intracavity structures for both p- and n-contacts, based on InGaAs/GaAs multiple quantum wells operating at , , 980 nm, indicating a low thermal resistance (Rth). The asymmetric current injection scheme is employed for reducing current crowding around the rim of the oxide aperture. A high aluminium content undoped Al0.88Ga0.12As and GaAs distributed Bragg reflector (DBR) mirror is used for efficient heat dissipation. The VCSEL with a 7 ,m oxide aperture exhibited an output power of 2.5 mW and a threshold current of 0.8 mA with a slope efficiency of 0.39 mW/mA at 20 °C under continuous-wave operation and it still worked with 1.3 mW at 90 °C. The temperature tuning coefficient of 0.081 nm/°C and dissipated electrical power tuning coefficient of 0.104 nm/mW were observed, leading to a low Rth of 1.28 °C/mW. A high modulation bandwidth up to 13 GHz with a modulation current efficiency factor of 6.1 GHz/mA1/2 was achieved. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2010
    T. D. Germann
    Abstract A vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator (EOM VCSEL) is fabricated using metal-organic vapor phase epitaxy. 3 dB extinction ratio of the modulator at a very low power consumption and open-eye operation of the EOM VCSEL at 10 Gb/s is demonstrated. The modulation of the 845 nm output is temperature-stable up to 85 °C. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Thin film formation by rf sputtering with EuGa2S4 target and photoluminescence of the prepared films

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006
    M. Dohi
    Abstract Thin films were deposited on Si and fused quartz substrates by rf sputtering with EuGa2S4 target. The deposited films were annealed in the mixed atmosphere of S and He, which led crystallization of the film from amorphous phase. Photoluminescence of the annealed films, characteristic to the Eu2+ ion, was observed with room temperature quantum efficiency of 17%. Decay time constants at room temperature and liquid nitrogen temperature were measured to be 140 ns, and 430 ns, respectively. The latter value is close to the reported radiative lifetime of the EuGa2S4 crystal. Construction possibility of a surface-emitting laser is discussed with data on behaviour of excitation intensity dependent time-resolved spectra under pulsed laser excitation and on surface roughness of the film. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Influence of the carrier diffusion process on the transient response of vertical-cavity surface-emitting lasers

    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 1 2003
    M. S. Torre
    Abstract We investigate the transverse mode dynamics of weakly index-guided vertical-cavity surface-emitting lasers (VCSEL). The turn-on time of transverse modes are calculated by implementing a model for the VCSEL dynamics including diffusion and transport/capture phenomena. It takes into account the spatial dependence of the two carrier density profiles associated with the confined carriers in the quantum wells, and with the unconfined carriers in the barrier region. Devices of different aperture diameter under different excitation conditions are also studied. The model displays the correct turn-on time dependence on the injection current density when compared with the experimental data available. We show that the turn-on time of the modes increases when capture time increases and escape time decreases and also when diffusion increases. Copyright © 2002 John Wiley & Sons, Ltd. [source]

    Long-wavelength (, , 1.3 µm) InGaAlAs,InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 14 2006
    Markus-Christian Amann
    Abstract In this paper we present an overview of the properties and applications of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on the InGaAlAs,InP material system. With respect to significant temperature sensitivity of active material gain as well as insufficient thermal conductivity of InP-based epitaxial compound layers, the effective thermal heat management appears as a major issue for application suitable device performance. In this context, the incorporation of a buried tunnel junction (BTJ) in connection with improved heat sinking resembles a breakthrough for long-wavelength VCSELs. With the utilization of n-type spreading layers and consequently ultralow series resistances, BTJ-VCSELs exhibit sharply reduced excess heat generation. Furthermore, the BTJ-approach enables self-aligned optical and current confinement. A hybrid dielectric stack with Au-coating yields an improved thermal heatsinking. The current status of BTJ-VCSELs encompasses a number of superior performance values. At 1.55 µm wavelength, this includes room temperature single- and multimode continuous wave (cw) output powers of more than 3 mW and 10 mW, respectively, laser operation for heat sink temperatures well exceeding 100 °C, and optical data transmission rates up to 10 Gbit/s. The versatility of compound layer composition enables arbitrary emission wavelengths within a broad range of 1.3 and 2 µm. With respect to sensing applications, BTJ-VCSELs appear as ideal components for optical detection of infrared active gases. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    High-performance nanoparticle-enhanced tunnel junctions for photonic devices

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2010
    Adam M. Crook
    Abstract We describe GaAs-based tunnel junctions that are compatible with photonic devices, including long-wavelength vertical-cavity surface-emitting lasers and multi-junction solar cells. Tunneling was enhanced with semimetallic ErAs nanoparticles, particularly when grown at reduced substrate temperatures. Additionally, we present the first direct measurement of the quality of III-V layers grown above ErAs nanoparticles. Photoluminescence measurements indicate that III-V material quality does not degrade when grown above ErAs nanoparticles, despite the mismatch in crystal structures. These findings validate these tunnel junctions as attractive candidates for GaAs-based photonic devices (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    High-power vertical external-cavity surface-emitting lasers

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2006
    J.-M. Hopkins
    The cover picture of this issue of physica status solidi (c) has been taken from the article [1]. [source]