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Spin Valves (spin + valve)

Distribution by Scientific Domains
Physics and Astronomy50%

Selected Abstracts

Robustness of Spin Polarization in Graphene-Based Spin Valves

ADVANCED FUNCTIONAL MATERIALS, Issue 23 2009
Masashi Shiraishi
Abstract The decrease of spin polarization in spintronics devices under the application of a bias voltage is one of a number of currently important problems that should be solved. Here, an unprecedented robustness of the spin polarization in multilayer-graphene spin valves at room temperature is revealed. Surprisingly, the spin polarization of injected spins is constant up to a bias voltage of +2.7,V and ,0.6,V in positive- and negative-bias voltage applications at room temperature, respectively, which is superior to all spintronics devices. This finding is induced by suppression of spin scattering due to an ideal-interface formation. Furthermore, an important accordance between theory and experiment in molecular spintronics is found by observing the fact that the signal intensity in a local scheme is double that in a nonlocal scheme, as theory predicts, which provides construction of a steadfast physical basis in this field. [source]

Magnetotransport of lateral Py/Pt/Py spin valve device

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2007
Giju Han
Abstract Spin injection and accumulation have been investigated for Py/Pt/Py lateral spin valves with various channel length. Clear spin valve effects were found at antiparallel magnetic configuration of two ferromagnetic electrodes. The observation of memory effect suggests the spin valve effect observed in Pt channel is resulted from effective spin injection and detection. The magnitude of spin valve signal decreases as the channel length increases. The measurement yields that spin diffusion length and spin injection polarization of Pt channel is 120 nm and 18% at 5K. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Magnetic properties of spin valves having extremely thin underlayers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2007
Jiwon Kim
Abstract Magnetic properties of spin valve elements having Mo(N) and Ta(N) underlayers were studied by varying their thickness. Spin valve structure was Si/SiO2/Underlayer(tÅ)/NiFe(21 or 42Å)/CoFe(28Å)/Cu(22Å)/CoFe(18Å)/IrMn(65Å)/Ta(25Å). Spin valve elements having exteremely thin Mo(N) and Ta(N) underlayers showed high MR ratio of about 7 - 8%. Annealing of such spin valve elements having underlayer thickness of 7 to 8 Å showed comparable behavior with the spin valve elements with thicker (35Å) underlayer, which can be utilized to reduce overall device thickness. Also, it was found that Mo(N) underlayers for spin valve elements may be used as diffusion barriers between Si substrate and ensuing active spin valve layers, simultaneously. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]