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Space Maps (space + map)

Distribution by Scientific Domains
Physics and Astronomy66%

Kinds of Space Maps

  • reciprocal space map
    		•

    Selected Abstracts

    Topographical projection from the superior colliculus to the nucleus of the brachium of the inferior colliculus in the ferret: convergence of visual and auditory information

    EUROPEAN JOURNAL OF NEUROSCIENCE, Issue 12 2000
    Timothy P. Doubell
    Abstract The normal maturation of the auditory space map in the deeper layers of the ferret superior colliculus (SC) depends on signals provided by the superficial visual layers, but it is unknown where or how these signals influence the developing auditory responses. Here we report that tracer injections in the superficial layers label axons with en passant and terminal boutons, both in the deeper layers of the SC and in their primary source of auditory input, the nucleus of the brachium of the inferior colliculus (nBIC). Electron microscopy confirmed that biocytin-labelled SC axons form axodendritic synapses on nBIC neurons. Injections of biotinylated dextran amine in the nBIC resulted in anterograde labelling in the deeper layers of the SC, as well as retrogradely labelled superficial and deep SC neurons, whose distribution varied systematically with the rostrocaudal placement of the injection sites in the nBIC. Topographical order in the projection from the SC to the ipsilateral nBIC was confirmed using fluorescent microspheres. We demonstrated the existence of functional SC-nBIC connections by making whole-cell current-clamp recordings from young ferret slices. Both monosynaptic and polysynaptic EPSPs were generated by electrical stimulation of either the superficial or deep SC layers. In addition to unimodal auditory units, both visual and bimodal visual,auditory units were recorded in the nBIC in vivo and their incidence was higher in juvenile ferrets than in adults. The SC-nBIC circuit provides a potential means by which visual and other sensory or premotor signals may be delivered to the nBIC to calibrate the representation of auditory space. [source]

    High-temperature (1500,K) reciprocal space mapping on a laboratory X-ray diffractometer

    JOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 2 2007
    R. Guinebretière
    A laboratory X-ray diffractometer devoted to the in situ characterization of the microstructure of epitaxic thin films at temperatures up to 1500,K has been developed. The sample holder was built using refractory materials, and a high-accuracy translation stage allows correction of the dilatation of both the sample and the sample holder. The samples are oriented with respect to the primary beam with two orthogonal rotations allowing the registration of symmetric as well as asymmetric reciprocal space maps (RSMs). The association of a monochromatic primary beam and a position-sensitive detector allows the measurement of RSMs in a few minutes for single crystals and in a few hours for imperfect epitaxic thin films. A detailed description of the setup is given and its potential is illustrated by high-temperature RSM experiments performed on yttria-doped zirconia epitaxic thin films grown on sapphire substrates. [source]

    X-ray characterization of epi-Ge/Pr2O3/Si(111) layer stacks by pole figures and reciprocal space mapping

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2009
    Peter Zaumseil
    Abstract An epi-Ge/Pr2O3/Si(111) layer structure prepared by consecutive steps of epitaxial deposition and annealing is used to demonstrate the possibility of a complex characterization by combination of different X-ray diffraction techniques. Especially pole figure measurements, reciprocal space mapping (RSM) and high resolution (HR) ,/2, scans at selected inclined netplanes were successfully used to determine the in-plane lattice orientation of the layers relative to the substrate, the strain state of all layers and the structural perfection of the epi-Ge film. It was found that the major part of the epi-Ge layer has the same type A stacking orientation as the Si substrate, but about 0.6% is of type B. The Pr2O3 buffer layer exhibits type B only. The strain state of oxide and epi-Ge was determined, and a small difference in the lattice constant of type A and B epi-Ge was found. Microtwins lying in inclined {111} planes were unambiguously identified by pole figure measurements as the dominating structural defects in the epi-Ge layer. They cause a characteristic scattering pattern in reciprocal space maps. The proposed combination of X-ray techniques allows a relatively fast, integral and non-destructive analysis of heteroepitaxial semiconductor oxide semiconductor structures. [source]

    Mechanisms of semiconductor nanostructure formation

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003
    R. S. Goldman
    Abstract We have examined the formation mechanisms of a variety of semiconductor nanostructures, including phase separation-induced alloy nanostructures and strain-induced self-assembled quantum dots. Using data from cross-sectional scanning tunneling microscopy, in conjunction with X-ray reciprocal space maps, we have developed new models for self-ordering of InAs/GaAs quantum dot superlattices and spontaneous lateral phase separation in InAlAs alloys. These models are likely to be applicable to a wide range of heteroepitaxial semiconductor nanostructures. [source]

    RF-MBE growth of InN on 4H-SiC (0001) with off-angles

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
    Misao Orihara
    Abstract We have grown InN on 4H-SiC (0001) substrates with various off-angles by RF-N2 plasma molecular beam epitaxy (RF-MBE). Scanning electron microscope observation revealed that InN films grown on 4H-SiC (0001) substrates with off-angles of 4° and 8° are very smooth and that there are no voids which have often observed for InN epitaxial layers. X-ray diffraction reciprocal space maps for InN grown on 4H-SiC (0001) showed that the c-axes of InN grown on 4H-SiC 4° and 8° off substrates are inclined by 0.35° and 0.8°, respectively, toward the misorientation of the substrate while the c-axis of InN is parallel to that of 4H-SiC for the on-axis substrate. Strong PL peak was observed from InN grown on 4° off substrate at 0.68 eV at 15 K. The PL peak was clearly observed even at room temperature and simply shifted to lower energies with increasing temperature. The difference in the PL peak energy between at 15 K and 300 K was 20 meV, which is reasonable taking into account the difference in the thermal coefficients of InN and SiC (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Spontaneous stratification of InGaN layers and its influence on optical properties

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
    Z. Liliental-Weber
    Abstract Transmission Electron Microscopy, high resolution X-ray diffraction and reciprocal space maps, Rutherford Back Scattering and photoluminescence were applied to study InGaN layers grown by MOCVD with increasing layer thickness (100 nm to 1000 nm) and nominally constant In concentration of 10%. Spontaneous stratification of the layer has been found. A strained layer with lower than nominal In content was found in direct contact with the underlying GaN followed by relaxed layers with a nominal or higher In concentration. A high density of randomly distributed stacking faults as well as domains with cubic structure and closely distributed stacking faults (polytype-like) were present in the thicker layers. Strong corrugation of the thicker sample surface was observed. The appearance of multiple photoluminescence line positions was related not only to the spontaneously formed layers with different In content, but also to the structural planar defects formed in the thicker layers. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]