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Sputtering Method (sputtering + method)
Kinds of Sputtering Method Selected AbstractsPhotoluminescence from Boron-Doped Titanium Nitride Nanocomposite Thin Films Prepared by the Magnetron Sputtering MethodJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 12 2007Sheng-Guo Lu Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ,5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350,900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film. [source] Optical investigations on the existence of phase transition in ZnO:Li thin films prepared by DC sputtering methodCRYSTAL RESEARCH AND TECHNOLOGY, Issue 3 2008A. Abu EL-Fadl Abstract We investigated the effect of temperature on the absorption spectra of Zn0.8Li0.2O thin films (ZnO:Li), deposited at 573 K, in the wavelength range 190-800 nm. The films were deposited on sapphire, MgO or quartz substrates by DC sputtering method. The results show a shift of the optical energy gap (Eg), with direct allowed transition type near the fundamental edge, to lower wavelengths as the temperature increases. The temperature rate of Eg changes considerably showing an anomaly around 320 K depending on type of substrate. The founded results indicated that replacement of Zn ions with Li ions induces a ferroelectric phase in the ZnO wurtzite-type semiconductor. The exponential dependence of the absorption coefficient on the incident photon energy suggests the validity of the Urbach rule. (© 2007 WILEY -VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Hydrothermal crystallization of carbonate-containing hydroxyapatite coatings prepared by radiofrequency-magnetron sputtering methodJOURNAL OF BIOMEDICAL MATERIALS RESEARCH, Issue 1 2007Satoshi Nakamura Abstract Carbonate-containing hydroxyapatite (HA) films were prepared by low-temperature hydrothermal annealing from carbonate-containing calcium phosphate amorphous coatings on titanium substrates. The biocompatibility of the carbonate-containing HA layers was estimated by in vitro tests using simulated body fluid (SBF). Precursory amorphous coatings were deposited with rf-magnetron sputtering apparatus, using calcium phosphate glass target in Ar/CO2 atmosphere. The carbonate-containing HA coatings were successfully formed by the annealing at above 130°C for 20 h. On the basis of SEM observation, about 2-,m thickness films coated rigidly were durable enough for the hydrothermal treatment. The coating layer was revealed to consist of single phase of PO4, and OH, partially carbonated HA by XRD and IR analyses. Overgrowing of bone-like apatite layers on the carbonate-containing HA surfaces in the SBF implied that the obtained films acquired a sufficient osteoconductivity, while it was still unclear that activity was enhanced, compared to pure HA coatings. The low-temperature hydrothermal annealing method was effective for preparation of rigid HA coatings on titanium as well as modification of their chemical compositions. © 2006 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2007 [source] Photoluminescence from Boron-Doped Titanium Nitride Nanocomposite Thin Films Prepared by the Magnetron Sputtering MethodJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 12 2007Sheng-Guo Lu Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ,5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350,900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film. [source] The influence of substrate on the magnetic properties of MnZn ferrite thin film fabricated by alternate sputteringPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 10 2008Lanxi Wang Abstract Mn0.5Zn0.5Fe2O4 film which has the highest saturation magnetization among Mn1,xZnx Fe2O4 thin films was prepared by the alternate rf sputtering method from two targets with compositions of MnFe2O4 and ZnFe2O4, respectively. The films were deposited on single-crystal Si(100), MgO(100) and SiO2/Si(100) substrates. The as-deposited films were amorphous, and after annealing in a vacuum furnace at 550 °C, polycrystalline MnZn ferrite films with residual amorphous matrix were obtained. The coercivity of all films is low, and the film on the MgO(100) substrate shows a coercivity as low as 27 Oe. The grain size of all films is about 20 nm and is less than the ferromagnetic exchange length (160 nm), so magnetic anisotropies are averaged to lower effective values. Furthermore, the negative magnetostriction constant of crystalline MnZn ferrite and the positive magnetostriction constant of amorphous Fe-based matrix will cancel out and may lead to a low or vanishing saturation magnetostriction constant. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Influence of the substrate on the structural properties of sputter-deposited ZnO filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2004Hyoun Woo Kim Abstract We have deposited ZnO films on various substrates using the r.f. magnetron sputtering method. X-ray diffraction and scanning electron microscopy coincidentally revealed that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si substrates. The XRD analysis revealed that the c -axis lattice constant decreased and increased, respectively, by thermal annealing for the ZnO films deposited on Si and sapphire substrates. Atomic force microscopy indicated that the surface roughness was higher for the films deposited on the sapphire substrates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Fabrication of a n -type ZnO/p -type Cu,Al,O heterojunction diode by sputtering deposition methodsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009Satoru Takahata Abstract CuAlO2 polycrystalline films were deposited by the helicon-wave-excited plasma sputtering (HWPS) method at 700 °C. The best full-width at half-maximum value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was similar to those reported previously using other deposition methods. While, noncrystalline Cu,Al,O films were deposited by a conventional RF sputtering method. Using this p -type transparent conducting oxide (TCO) film and an n -type ZnO film deposited by HWPS, a n -type ZnO/p -type Cu,Al,O heterojunction diode was fabricated. Optical transmittance of the device was approximately 80% in the near infrared region. The rectifying current,voltage characteristics with a threshold forward voltage approximately 1.4 V were obtained. These results are the first step toward realizing an electrical/optical device using p -type CuAlO2 or Cu-Al-O films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Magnetic and electrical properties of BiMnO3 thin filmsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2007M. Grizalez Abstract BiMnO3 thin films were deposited on single-crystal (001)-oriented SrTiO3 substrates by rf-magnetron sputtering method. X-ray diffraction was used to analyze the crystal structure of the thin films, indicating that the films were monoclinic with two dominant orientation relationships along the substrate. The first is (111) BiMnO3 , (001) SrTiO3; the second is (222) BiMnO3 , (002) SrTiO3; other peaks showed that the films were polycrystalline. The roughness of the films was characterized by AFM. R vs. T was measured from 390 K to 15 K using a Keithley Model 167 Programmable Electrometer. Magnetic characterization was carried out by using a quantum designÔ magnetometer for magnetization versus temperature and for hysteresis loops at different temperatures. The saturation magnetic moment of 2.8,B per Mn ion (still fairly smaller than that of the bulk, 3.6,B) was observed at 5 K decreasing with increasing temperature. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Fabrication of 123-type high- Tc superconducting thin films on BaZrO3 -buffered MgO substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006S. Adachi Abstract We have developed a stable preparation process for high-quality thin films of YBa2Cu3Oy (123)-type high- Tc superconductors (HTS) for the ground plane of single-flux-quantum (SFQ) devices. The films were deposited on MgO (100) substrates by an off-axis DC magnetron sputtering method. During deposition, the substrates were directly heated by thermal radiation from a heater. No adhesive paste was used for fixing the substrate. Possibility of chip contamination due to the paste could be completely eliminated. The insertion of a BaZrO3(BZO)-buffer layer was effective to obtain flat epitaxial 123 films with complete c -axis orientation. The flat ground plane could play a role as a suitable foundation for multilayer films of SFQ devices. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Preparation of LaCuOS by solid phase reaction method using La2S3 and CuO starting materialsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006H. Matsushita Abstract We have developed the best method for synthesizing a single phase of LaCuOS, not using three starting materials, La2O3, La2S3 and Cu2S. If this method is possible, the LaCuOS thin film must be grown by the sputtering method with only two targets. The results of X-ray diffraction and diffuse reflective spectroscopy of LaCuOS samples prepared from the combination of La2O3+La2S3+4CuS and La2S3+2CuO at 600 °C for 6 hours under a vacuum show that the single phase of LaCuOS with a band gap of about 3.1 eV is obtained at lower temperature. The results on powder formation suggests a possibility that LaCuOS thin films can be prepared by the sputtering method by using La2S3 and CuO targets, by means of improving these preparation conditions. (© 2006 WILEY-VCH Verlag GmbH & Co. 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