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Solution Precursors (solution + precursor)
Selected AbstractsFormation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution PrecursorsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 11 2007Sung-Hun Wee Crystallization studies were performed of epitaxial La2Zr2O7 (LZO) films on biaxially textured Ni,3at.%W substrates having thin Y2O3 (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c -axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850°,950°C in flowing one atmosphere gas mixtures of Ar,4% H2 with an effective oxygen partial pressure of P(O2),10,22 atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100°C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures. [source] Diamond Growth on a Si Substrate With Ceramic InterlayersJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 5 2007Y. S. Li Deposition of diamond films on Si substrates precoated with a series of ceramic intermediate layers was examined. The interlayers containing SiC, SiNx, SiCN, TiSiN, and TiAlSiN were prepared by a liquid injection plasma-enhanced chemical vapor deposition (PECVD) method using alkoxide solution precursors. The subsequent diamond synthesis on these coatings was carried out by microwave plasma-assisted CVD (MPCVD) using a H2,1%CH4 mixture. A higher nucleation density of diamond was obtained on these intermediate layers than on the as-polished Si wafer, along with a nonuniform surface distribution of diamond. Diamond powder scratching pretreatment of these interlayers enhanced the nucleation density and promoted the formation of fully uniform diamond films. Particularly, nanocrystalline diamond films were directly generated on TiSiN and TiAlSiN layers under an identical deposition condition that had favored the formation of microcrystalline diamond films on Si wafers and the Si(C,N) interlayers. The mechanism for this difference is attributed primarily to a higher amount of residual amorphous carbon in TiSiN and TiAlSiN layers than that inside Si(C,N) layers. [source] Synthesis of Al2O3,SiO2 Films by Ar/O2 Plasma-Enhanced CVD from Alkoxide Precursors,CHEMICAL VAPOR DEPOSITION, Issue 5 2006Y. Li Amorphous Al2O3, SiO2, and Al2O3,SiO2 composite films have been produced at 800,°C from alkoxide solution precursors by liquid-injection oxygen plasma enhanced CVD. The films' structures and morphologies are affected by the feed rate of the liquid precursor and their compositions can be controlled by adjusting the Si/Al ratios in the starting source. Steel substrates coated with the above films gained excellent protection when they were exposed to high temperature atmosphere containing KCl vapor. [source] | ||||||||||