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Single QDs (single + qd)
Selected AbstractsControl of single quantum dot emission characteristics and fine structure by lateral electric fieldsPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2009S. M. Ulrich Abstract The spontaneous emission characteristics of individual self-assembled (In,Ga)As/GaAs quantum dots have been investigated under the application of a tunable electric field in the lateral growth plane. For the neutral excitonic and bi-excitonic as well as a singly-charged (trionic) QD carrier configuration, similar quantum-confined Stark effects could be observed, thus enabling a direct and comparative determination of corresponding polarizability values ,. In addition we have applied a refined detection technique of high-resolution Fabry,Pérot interferometry on single QDs to investigate the anisotropy-induced excitonic fine structure and to monitor its tunability under a lateral electric field. Whereas most quantum dots reveal an oscillatory-type modulation and partial reduction in fine structure under the applied field, we also demonstrate the case of a selected QD where the initial fine structure could even be reversibly tuned down to zero. This fine structure tunability of single QDs represents an essential prerequisite for the realization of individually controlled entangled photon sources in the future. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)BPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2009E. Selçuk Abstract Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dotsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009F. Demangeot Abstract We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski-Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen source, with a very low surface density. Low temperature (LT) microphotoluminescence measurements have been performed on 200 nm wide mesas in order to isolate the luminescence of single QDs. The linewidth is found to vary from 590 ,eV at 4 K up to 1350 ,eV at 65 K in a dot of 6 monolayer height. Though the LT linewidth is still dominated by spectral diffusion, the temperature dependent broadening up to 50 K is mainly accounted for by interactions between excitons and acoustic phonons through a coupling coefficient value nearly two orders of magnitude larger than its counterpart in InAs QDs. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Influence of piezoelectric fields on excitonic complexes in InGaN quantum dotsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2009K. Sebald Abstract We present an analysis of the optical properties of single InGaN quantum dots (QDs) grown by MOVPE. The samples were structured into mesas by focused-ion-beam etching and investigated by micro-photoluminescence measurements. The QDs are characterized by the high temperature stability of their emission up to 150 K. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. Time-resolved microphotoluminescence measurements on the excitonic and biexcitonic transition of a single quantum dot yields a radiative recombination lifetime of 2.06 ns for the exciton. The data can be fitted by a simple model for cascaded emission confirming the expected refilling of the excitonic state by biexcitonic recombination. In addition, the influence of piezoelectric fields on the exciton and biexciton emission and on their binding energy in single QDs was investigated. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||