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Single Crystalline (single + crystalline)
Selected AbstractsElectron microscopy of InGaN nanopillars spontaneously grown on Si(111) substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2010Th. Kehagias Abstract The mopholological, structural and chemical properties of InxGa1,xN nanopillars directly grown on Si (111) substrates, by molecular beam epitaxy, were investigated employing transmission electron microscopy related techniques. Single crystalline, single phase nanopillars were observed exhibiting a low density of crystal defects, which contribute to good crystal quality. Initial nanostructures merge through subgrain boundaries to form final nanopillars. Energy dispersive X-ray analysis revealed a very low InN mole fraction near the interface with the substrate, owing to high desorption rates from the elevated growth temperature, and gradually higher In incorporation rates near the tips of the nanopillars. This compositional fluctuation is maintained due to poor segregation of indium adatoms along the c-axis of the nanopillars towards the Si interface. A second species of long and narrow nanopillars was found In-free. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Mechanical properties of single crystalline and glassy lithium triborateCRYSTAL RESEARCH AND TECHNOLOGY, Issue 4 2008I. P. Shakhverdova Abstract Mechanical properties of LiB3O5 single crystal plates with different orientation as well as of glass with the same composition have been investigated. The nano- (H) and microhardness (HM), the reduced Young's modulus (Er) and the crack behaviour of the samples were studied. Both hardness and Young's modulus of glass appeared smaller in comparison to corresponding single crystal data (H , 7 , 8 GPa, HM , 6 GPa, Er , 70 , 80 GPa for glass and H , 10 , 15 GPa, HM , 6 ,11 GPa, Er , 93 , 155 GPa for single crystal). H, Er, and the plane of crack propagation proved orientation-dependent. Cracks in the glass sample were not observed up to 0.49 N microindentation load, whereas for the single crystal the cracks appeared already at 0.098N. In single crystals the observed cleavage planes {211} and/or {412} are oriented nearly parallel to planes of B-O rings. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Phosphonylation of 2-Amino- and 2-Amido-3-bromopyridines and 2-Amino-3-chloroquinoxalines with Triethyl PhosphiteEUROPEAN JOURNAL OF ORGANIC CHEMISTRY, Issue 27 2009M. Shaker S. Adam Abstract The Tavs reaction of 2-amino- and 2-acylamido-3-bromopyridines 1 and 2 with triethyl phosphite in the presence of palladium acetate or chloride allows the synthesis of 2-amino- and 2-acylamidopyridine-3-phosphonates 3 and 4. A second ring nitrogen atom causes strong activation and leads to excellent yields in the phosphonylation of 2-amino-3-chloroquinoxalines. 2,3-Dichloroquinoxaline does not need a catalyst and undergoes double phosphonylation with sodium diethyl phosphite under Michaelis,Becker conditions. The results show an activating influence of pyridine nitrogen (,M) and deactivating influence of the amino group (+M). The reactivity of 1 and 2 in the Tavs coupling is compared with that of the 3-NH-2-bromopyridine position isomers and 2-bromoanilines and discussed in terms of the opposite effects of pyridine and amino(amido) nitrogen and different position of the N atoms towards the reaction site. The advantage of the Tavs reaction is the easy optimization because neither auxiliary ligands are required nor a base to trap the halide or a solvent. Triethyl phosphite itself acts as ligand and forms Pd0{P(OEt)3}n in the initial phase of the reaction. The structures of the products and the expected intramolecular N,H···O=P hydrogen bridging bonds were proven by solution NMR and by X-ray crystal structure analysis of single crystalline 3c.(© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009) [source] Vertical Nanostructures: Vertical (La,Sr)MnO3 Nanorods from Track-Etched Polymers Directly Buffering Substrates (Adv. Funct.ADVANCED FUNCTIONAL MATERIALS, Issue 6 2010Mater. The inside cover image shows a tilted SEMFE image of La0.7Sr0.3MnO3 vertical nanorods. A. Carretero-Genevrier and co-workers have established a new method to generate vertical complex oxides nanostructures based on a sol,gel precursor solution and using track-etched polymers that act to buffer the substrate, which is described on page 892. These vertical nanorods grown at mild temperature undergo a complete structural, morphological, and chemical transformation into single crystalline (LaSr)xOy nanopyramids upon thermal activation at 1000°C. [source] Toward the Development of Printable Nanowire Electronics and SensorsADVANCED MATERIALS, Issue 37 2009Zhiyong Fan Abstract In recent years, there has been tremendous progress in the research and development of printable electronics on mechanically flexible substrates based on inorganic active components, which provide high performances and stable device operations at low cost. In this regard, various approaches have been developed for the direct transfer or printing of micro- and nanoscale, inorganic semiconductors on substrates. In this review article, we focus on the recent advancements in the large-scale integration of single crystalline, inorganic-nanowire (NW) arrays for electronic and sensor applications, specifically involving the contact printing of NWs at defined locations. We discuss the advantages, limitations, and the state-of-the-art of this technology, and present an integration platform for future printable, heterogeneous-sensor circuitry based on NW parallel arrays. [source] Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on siliconJOURNAL OF RAMAN SPECTROSCOPY, Issue 6 2009Thomas Wermelinger Abstract Silicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross-sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga+ ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range. Copyright © 2009 John Wiley & Sons, Ltd. [source] Synthesis and Mechanism of Ferroelectric Potassium Tantalate Niobate Nanoparticles by the Solvothermal and Hydrothermal ProcessesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 5 2007Nian Wei High-purity KTa0.3Nb0.7O3 nanoparticles have been successfully synthesized by hydrothermal and solvothermal methods. The KOH concentration and the solvent composition have significant effects on the final products. The synthesis mechanism was discussed. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy investigations show that the typical samples solvothermally synthesized are nanosized, well crystallized, and single crystalline. The KTa0.3Nb0.7O3 shows a pseudo-cubic to tetragonal transition with increasing crystallite size. It is believed that supercritical isopropanol plays an important role in synthesizing KTa0.3Nb0.7O3 nanoparticles under milder conditions than the hydrothermal route. The present solvothermal method provides a new potential route for synthesizing ferroelectric potassium tantalate niobate material. [source] Nanoscale lead and noble gas inclusions in aluminum: Structures and propertiesMICROSCOPY RESEARCH AND TECHNIQUE, Issue 5-6 2004Erik Johnson Abstract Transmission electron microscopy has been used for structural and physical characterization of nanoscale inclusions of lead and noble gases in aluminum. When the inclusion sizes approach nanoscale dimensions, many of their properties are seen to deviate from similar properties in bulk and in most cases the deviations will increase as the inclusion sizes decrease. Binary alloys of lead and noble gases with aluminum are characterized by extremely low mutual solubilities and inclusions will, therefore, exist as practically pure components embedded in the aluminum matrix. Furthermore, the thermal vacancy mobility in aluminum at and above room temperature is sufficiently high to accommodate volume strains associated with the inclusions thus leading to virtually strain free crystals. The inclusions grow in parallel cube alignment with the aluminum matrix and have a cuboctahedral shape, which reflects directly the anisotropy of the interfacial energies. Inclusions in grain boundaries can have single crystalline or bicrystalline morphology that can be explained from a generalized Wulff analysis such as the ,-vector construction. The inclusions have been found to display a variety of nanoscale features such as high Laplace pressure, size-dependent superheating during melting, deviations from the Wulff shape displaying magic size effects, a shape dependence of edge energy, and so on. All these effects have been observed and monitored by TEM using conventional imaging conditions and high-resolution conditions in combination with in-situ analysis at elevated temperatures. Microsc. Res. Tech. 64:356,372, 2004. © 2004 Wiley-Liss, Inc. [source] Unusual current-voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 filmsANNALEN DER PHYSIK, Issue 10 2004A. Sawa Abstract The current-voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 films were measured and analyzed. Several epitaxial films, as well as 45° [001]-tilt grain boundaries, display current-voltage characteristics which are asymmetric with respect to polarity reversal of the bias current. One epitaxial film has a polarity dependent resistance of ,340k, and of ,670k, in forward and in reverse direction, respectively. [source] | ||||||||||||||||