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Silicon Crystal (silicon + crystal)
Selected AbstractsOdd electrons in molecular chemistry, surface science, and solid state magnetismINTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, Issue 14 2007E. F. Sheka Abstract A unified theoretical or computational odd-electrons approach is suggested to nanomaterials, making possible their consideration on the same conceptual basis as well as on the same computational footing. The current paper presents the approach application to the chemistry of fullerenes, carbon single-walled nanotubes, surface science of silicon crystal, as well as to the molecular magnetism of both molecular crystals composed of transitional metal complexes and solid polymerized fullerenes. © 2007 Wiley Periodicals, Inc. Int J Quantum Chem, 2007 [source] A novel lattice-spacing comparator with resolution of 10,8JOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 2 2003Xiaowei Zhang A novel, fast and stable system for measuring the lattice spacing of a silicon crystal with a precision of 10,8 is described. Self selection of monochromatic X-rays by a monolithic double channel-cut crystal monochromator (MDCM), producing silicon 264 and 624 diffraction, may lead to a stable, highly collimated and narrow-bandwidth beam. When utilizing the 264 and 624 Bragg reflections of a silicon sample, the angular distance between the two associated Bragg peaks must be extremely small, so that the diffraction angle can be determined with high precision and the traveling time from one peak to the other can be considerably reduced by the order of at least three compared with the established classical Bond method. This so-called self-reference comparator method can dramatically save measurement time and can provide an absolute measurement on the basis of the known X-ray wavelength available from the MDCM. Thus a lattice-spacing measurement with resolution of 10,8, within a few tens of seconds for an area of 1,mm2 on a silicon sample, has been realised. [source] Crystal temperature control in the Czochralski crystal growth processAICHE JOURNAL, Issue 1 2001Antonios Armaou This work proposes a control configuration and a nonlinear multivariable model-based feedback controller for the reduction of thermal gradients inside the crystal in the Czochralski crystal growth process after the crystal radius has reached its final value. Initially, a mathematical model which describes the evolution of the temperature inside the crystal in the radial and axial directions and accounts for radiative heat exchange between the crystal and its surroundings and motion of the crystal boundary is derived from first principles. This model is numericully solved using Galerkin's method and the behaviour of the crystal temperature is studied to obtain valuable insights which lead to the precise formulation of the control problem, the design of a new control configuration for the reduction of thermal gradients inside the crystal and the derivation of a simplified 1-D in a space dynamic model. Then, a model reduction procedure for partial differential equation systems with time-dependent spatial domains (Armaou and Christofides, 1999) based on a combination of Galerkin's method with approximate inertial manifolds is used to construct a fourth-order model that describes the dominant thermal dynamics of the Czochralski process. This low-order model is employed for the synthesis of a fourth-order nonlinear multivariable controller that can be readily implemented in practice. The proposed control scheme is successfully implemented on a Czochralski process used to produce a 0.7 m long silicon crystal with a radius of 0.05 m and is shown to significantly reduce the axial and radial thermal gradients inside the crystal. The robustness of the proposed controller with respect to model uncertainty is demonstrated through simulations. [source] First experiments on diffraction-enhanced imaging at LNLSJOURNAL OF SYNCHROTRON RADIATION, Issue 6 2003C. Giles Diffraction-enhanced images have been obtained using two silicon crystals in a non-dispersive set-up at the XRD2 beamline at the Brazilian Synchrotron Light Laboratory (LNLS). A first asymmetrically cut silicon crystal using the (333) reflection vertically expanded the monochromated beam from 1,mm to 20,mm allowing the imaging of the whole sample without movements. A symmetrically cut Si(333) second crystal was used as a Bragg analyzer. Images of biological samples including human tissue were recorded using a direct-conversion CCD detector resulting in enhancement of the contrast compared with absorption-contrast images. [source] Polarization-dependent six-beam X-ray pinhole topographsACTA CRYSTALLOGRAPHICA SECTION A, Issue 4 2006Kouhei Okitsu X-ray six-beam pinhole topograph images were obtained for a silicon crystal with incident synchrotron X-rays. The polarization state of X-rays incident on the sample crystal was controlled by using a four-quadrant phase-retarder system [Okitsu et al. (2002). Acta Cryst. A58, 146,154] that can be rotated around the transmitted beam axis to generate arbitrarily polarized X-rays. Quantitative agreement was found between the experimental and computer-simulated topograph images based on the n -beam Takagi,Taupin dynamical theory under the assumption that the polarization state of the incident X-rays was identical with the experiment. This result confirmed the validity of the computer algorithm to solve the n -beam dynamical theory and the proper operation of the rotating four-quadrant phase-retarder system simultaneously. [source] Equilibrium and growth shapes of crystals: how do they differ and why should we care?CRYSTAL RESEARCH AND TECHNOLOGY, Issue 4-5 2005Robert F. SekerkaArticle first published online: 15 MAR 200 Abstract Since the death of Prof. Dr. Jan Czochralski nearly 50 years ago, crystals grown by the Czochralski method have increased remarkably in size and perfection, resulting today in the industrial production of silicon crystals about 30 cm in diameter and two meters in length. The Czochralski method is of great technological and economic importance for semiconductors and optical crystals. Over this same time period, there have been equally dramatic improvements in our theoretical understanding of crystal growth morphology. Today we can compute complex crystal growth shapes from robust models that reproduce most of the features and phenomena observed experimentally. We should care about this because it is likely to result in the development of powerful and economical design tools to enable future progress. Crystal growth morphology results from an interplay of crystallographic anisotropy and growth kinetics by means of interfacial processes and long-range transport. The equilibrium shape of a crystal results from minimizing its anisotropic surface free energy under the constraint of constant volume; it is given by the classical Wulff construction but can also be represented by an analytical formula based on the ,-vector formalism of Hoffman and Cahn. We now have analytic criteria for missing orientations (sharp corners or edges) on the equilibrium shape, both in two (classical) and three (new) dimensions. Crystals that grow under the control of interfacial kinetic processes tend asymptotically toward a "kinetic Wulff shape", the analogue of the Wulff shape, except it is based on the anisotropic interfacial kinetic coefficient. If it were not for long range transport, crystals would presumably nucleate with their equilibrium shape and then evolve toward their "kinetic Wulff shape". Allowing for long range transport leads to morphological instabilities on the scale of the geometric mean of a transport length (typically a diffusivity divided by the growth speed) and a capillary length (of the order of atomic dimensions). Resulting crystal growth shapes can be cellular or dendritic, but can also exhibit corners and facets related to the underlying crystallographic anisotropy. Within the last decade, powerful phase field models, based on a diffuse interface, have been used to treat simultaneously all of the above phenomena. Computed morphologies can exhibit cells, dendrites and facets, and the geometry of isotherms and isoconcentrates can also be determined. Results of such computations are illustrated in both two and three dimensions. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Silicon crystal growth from the melt: Analysis from atomic and macro scalesCRYSTAL RESEARCH AND TECHNOLOGY, Issue 4-5 2005K. Kakimoto Abstract The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] First experiments on diffraction-enhanced imaging at LNLSJOURNAL OF SYNCHROTRON RADIATION, Issue 6 2003C. Giles Diffraction-enhanced images have been obtained using two silicon crystals in a non-dispersive set-up at the XRD2 beamline at the Brazilian Synchrotron Light Laboratory (LNLS). A first asymmetrically cut silicon crystal using the (333) reflection vertically expanded the monochromated beam from 1,mm to 20,mm allowing the imaging of the whole sample without movements. A symmetrically cut Si(333) second crystal was used as a Bragg analyzer. Images of biological samples including human tissue were recorded using a direct-conversion CCD detector resulting in enhancement of the contrast compared with absorption-contrast images. [source] A lamellar model for the X-ray rocking curves of sagittally bent Laue crystalsACTA CRYSTALLOGRAPHICA SECTION A, Issue 1 2003Z. Zhong The use of sagittally bent asymmetric Laue crystals in horizontally focusing monochromators for high-energy synchrotron X-rays necessitates simulation of the X-ray reflectivity by such crystals. Based on the theory of the lattice distortion in the diffraction plane of sagittally bent Laue crystals, a lamellar model was developed to predict their rocking curves. The model was experimentally verified by rocking-curve measurements from various reflections on silicon crystals of four representative orientations, sagittally bent to various radii, using X-rays of 67,keV energy. [source] | ||||||||||