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Silicate Films (silicate + film)
Selected AbstractsAluminum Silicate Films Obtained by Low-Pressure Metal-Organic Chemical Vapor DepositionJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 6 2003Dong-Hau Kuo Amorphous alumina-silica films with film thickness of 0.41,2.69 ,m were prepared on glass and silicon substrates by metal-organic chemical vapor deposition using a mixture of aluminum tri-sec-butoxide (ATSB), hexamethyldisilazane (HMDSN), and argon. By controlling the inputs of ATSB and HMDSN, alumina-silica thin films could contain varied compositions and adjustable properties. Basically, the codeposition of alumina and silica to form alumina-silica using ATSB and HMDSN had a faster growth rate than their individual components. The internal stress could be adjusted by deposition temperature and reactant inputs. Adhesion could be improved by having a silicon-rich thin film, whereas an aluminum-rich film could have slightly higher hardness. Optical properties, e.g., refractive index and optical transmittance, were also measured. [source] MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications,CHEMICAL VAPOR DEPOSITION, Issue 2-3 2007M. Lemberger Abstract In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal,oxide,semiconductor devices are investigated. Films are deposited by metal,organic (MO)CVD using the single-source precursor Hf(acac)2(OSitBuMe2)2. This precursor exhibits good properties in terms of hydrolysis stability, volatility, and deposition. However, precursor decomposition is affected by surface conditions. Films deposited on Si wafers reveal high C contamination (up to 20,at,%) and low Si content (up to 20,at,%). In contrast, for film deposition on Ge wafers, no C contamination can be detected and Si incorporation is delayed until after about 15,nm HfO2 dielectric growth. Post-deposition rapid thermal annealing in an O2 atmosphere causes crystallization of deposited films, Si and Ge redistribution in the dielectric, respectively, and interfacial layer growth. However, oxygen annealing was also found to reduce effective oxide thickness (EOT) significantly compared to as-deposited films, which is attributed to crystallization effects. However, scaling of EOT is limited by that interfacial layer growth. Leakage currents are mainly caused by trap-related conduction mechanisms. Energy levels of involved traps decrease with increasing crystallization and/or Hf content, and values of 0.5,eV and 1,eV related to Hf and Si bonds, respectively, are obtained. [source] Dual-Tone Patterned Mesoporous Silicate Films Templated From Chemically Amplified Block CopolymersADVANCED FUNCTIONAL MATERIALS, Issue 17 2009Sivakumar Nagarajan Abstract Directly patterned mesoporous silicate films are prepared using positive- and negative-tone strategies by performing phase selective silica condensation within lithographically exposed poly(styrene- b - tert -butyl acrylate) (PS- b -PtbA) templates containing photoacid generators. The use of supercritical fluid as a process medium enables rapid diffusion of the silicate precursor within the prepatterned block copolymer template film without disrupting its morphology. Template exposure through the mask triggers area selective generation of acid, which in turn both deprotects the poly(tert -butyl acrylate) block to yield a poly(acrylic acid) block and provides a catalyst for silica precursor condensation yielding pattern formation at the device level. Because the acid generated in the UV exposed field preferentially segregates into hydrophilic poly(acrylic acid) domains of the phase segregated, deprotected block copolymer, precursor condensation is simultaneously controlled at nanoscopic length scales via templating by the underlying block copolymer morphology. The ability of PS- b -PtbA to undergo chemical transformation in two stages, deprotection followed by crosslinking, enables precise replications of the photomask in positive and negative tones. Detemplating via calcination yields patterned mesoporous silicate films without etching. Template formulations are optimized using infrared spectroscopic studies and the silicate films are characterized using electron microscopy and scanning force microscopy. [source] | ||||||||||