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SiO2 Matrix (sio2 + matrix)
Selected AbstractsInlaid Multi-Walled Carbon Nanotube Nanoelectrode Arrays for ElectroanalysisELECTROANALYSIS, Issue 1 2005Jun Li Abstract The rapid development in nanomaterials and nanotechnologies has provided many new opportunities for electroanalysis. We review our recent results on the fabrication and electroanalytical applications of nanoelectrode arrays based on vertically aligned multi-walled carbon nanotubes (MWCNTs). A bottom-up approach is demonstrated, which is compatible with Si microfabrication processes. MWCNTs are encapsulated in SiO2 matrix leaving only the very end exposed to form inlaid nanoelectrode arrays. The electrical and electrochemical properties have been characterized, showing well-defined quasireversible nanoelectrode behavior. Ultrasensitive detection of small redox molecules in bulk solutions as well as immobilized at the MWCNT ends is demonstrated. A label-free affinity-based DNA sensor has shown extremely high sensitivity approaching that of fluorescence techniques. This platform can be integrated with microelectronics and microfluidics for fully automated microchips. [source] UV Random Lasing Action in p-SiC(4H)/i-ZnO,SiO2 Nanocomposite/n-ZnO:Al Heterojunction DiodesADVANCED MATERIALS, Issue 13 2006UV random lasing in p,i,n ZnO-based heterojunction diodes is achieved. The UV emission originates from the use of an intrinsic ZnO,SiO2 nanocomposite layer; the use of ZnO powders can improve the electrical-to-optical conversion efficiency of the heterojunction. The patterned ZnO clusters in the SiO2 matrix enhance the quality of the random media (see figure) thus sustaining the random lasing action. If low-index, p-doped, wide-bandgap materials are used as the hole-injection layer, strong coherent random lasing could be achieved. [source] Crystal structure of defect-containing semiconductor nanocrystals , an X-ray diffraction studyJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 4 2009Maja Buljan Defects of crystal structure in semiconductor nanocrystals embedded in an amorphous matrix are studied by X-ray diffraction and a full-profile analysis of the diffraction curves based on the Debye formula. A new theoretical model is proposed, describing the diffraction from randomly distributed intrinsic and extrinsic stacking faults and twin blocks in the nanocrystals. The application of the model to full-profile analysis of experimental diffraction curves enables the determination of the concentrations of individual defect types in the nanocrystals. The method has been applied for the investigation of self-organized Ge nanocrystals in an SiO2 matrix, and the dependence of the structure quality of the nanocrystals on their deposition and annealing parameters was obtained. [source] Ion beam synthesis of buried Zn-VI quantum dots in SiO2, grazing incidence small-angle X-ray scattering studiesJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3-1 2003I.D. Desnica-Frankovic Grazing incidence small-angle X-ray scattering was used to study ion-beam synthesized Zn-VI compound-semiconductor quantum dots (QDs), buried in a SiO2 matrix. The ZnTe and ZnS QDs were formed by successive ion implantation of constituent atoms, at high ion doses and subsequent annealing at different temperatures in the 1070,1370 K range. In Zn and Te implanted SiO2, small nano-crystals were formed at higher annealing-temperatures, a bimodal size distribution of nano-particles was observed for both materials, which could be explained by an interplay of Ostwald ripening and enhanced diffusion in the irradiation-damaged region. [source] Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrixJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3-1 2003U.V. Desnica Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of CdS quantum dots (QDs) from Cd and S atoms implanted in SiO2. For a dose of 1017/cm2, the partial synthesis of CdS QDs occurred already during implantation, with only moderate size increase upon subsequent annealing up to Ta=1073 K. The dynamics of QD synthesis and growth were considerably different for just two times lower dose, where synthesis started only if the implanted samples were annealed at Ta = 773 K or higher, with a strong increase of the size of QDs upon annealing at higher Ta. The results suggest that high-dose implantation followed by low-temperature annealing could lead to better defined sizes and narrower size distributions of QDs. [source] DIATOM SILICA BIOMINERALIZATION: AT NANOSCALE LEVEL A CHEMICALLY UNIFORM PROCESSJOURNAL OF PHYCOLOGY, Issue 2000E. G. Vrieling Using a high-brilliance synchrotron X-ray source, combined small- and wide-angle X-ray scattering (SAXS and WAXS) was applied to study nanoscale characteristics, in particular pore size in the range of 3 to 65 nm, of a variety of unialgal cultures of centric and pennate diatoms, and of mixed diatom populations sampled in the field. Results of scattering analysis were compared with details of pore size, structure and orientation visible at the electron microscopic level. WAXS patterns did not reveal any crystalline phase or features of microcrystallinity (resolution 0.07 to 0.51 nm), which implies a totally amorphous character of the SiO2 matrix of the frustule material. SAXS data (resolution 3 to 65 nm) provided information on geometry, size, and distribution of pores in the silica. Overall, two pore regions were recognized that were common to the silica of all samples: the smallest (d less than 10 nm) regularly spaced and shaped spherically, the larger (up to 65 nm) being cylinders or slits. Apparently, at a nanoscale level diatomaceous silica is quite homologous among species, in agreement with the chemical principles of silica polymerization under the conditions of pH and precursor concentrations inside the silicon deposition vesicle. The final frustule "macro"-morphology is of course species-specific, being determined genetically. Synthetically-derived MCM-type silicas have a similarly organized pore distribution in an amorphous silica matrix as we found in all diatom species studied. We therefore suggest that organic molecules of a kind used as structure-directing agents to produce these artificial silicas play a role in the nucleation of the silica polymerization reaction and the shaping of pore morphology inside the silicon deposition vesicle of diatoms. Structure-directing molecules now await isolation from the SDV, followed by identification and characterisation by molecular techniques. [source] Nanoscale uniformity of pore architecture in diatomaceous silica: a combined small and wide angle x-ray scattering studyJOURNAL OF PHYCOLOGY, Issue 1 2000Engel G. Vrieling Combined small and wide angle X-ray scattering (SAXS and WAXS) analysis was applied to purified biogenic silica of cultured diatom frustules and of natural populations sampled on marine tidal flats. The overall WAXS patterns did not reveal crystalline phases (WAXS domain between 0.07 to 0.5 nm) in this biogenic silica, which is in line with previous reports on the amorphous character of the SiO2 matrix of diatom frustules. One exception was the silica of the pennate species Cylindrotheca fusiformis Reimann et Lewin, which revealed wide peaks in the WAXS spectra. These peaks either indicate the presence of a yet unknown crystalline phase with a repetitive distance (d -value ,0.06 nm) or are caused by the ordering of the fibrous silica fragments; numerous girdle bands. The SAXS spectra revealed the size range of pores (diameter d between 3.0 and 65 nm), the presence of distinct pores (slope transitions), and structure factors (oscillation of the spectra). All slopes varied in the range of ,4.0 to ,2.5, with two clear common regions among species: d < 10 nm (slopes ,4, denoted as region I and also called the Porod region), and 10.0 < d < 40.0 nm (slopes ,2.9 to ,3.8, denoted as region II). The existence of these common regions suggests the presence of comparable form (region I) and structure (region II) factors, respectively the shape of the primary building units of the silica and the geometry of the pores. Contrast variation experiments using dibromomethane to fill pores in the SiO2 matrix showed that scattering was caused by pores rather than silica particles. Electron microscopic analysis confirmed the presence of circular, elliptical, and rectangular pores ranging in size from 3 to 65 nm, determining the structure factor. The fine architecture (length/width ratio of pore diameters) and distribution of the pores, however, seemed to be influenced by environmental factors, such as the salinity of and additions of AlCl3 to the growth medium. The results indicate that diatoms deposit silica with pores <50 nm in size and are highly homologous with respect to geometry. Consequently, it is suggested that in diatoms, whether pennate or centric, the formation of silica at a nanoscale level is a uniform process. [source] Preparation of NiAl2O4/SiO2 and Co2+ -Doped NiAl2O4/SiO2 Nanocomposites by the Sol,Gel RouteJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 7 2006I. Prakash NiAl2O4/SiO2 and Co2+ -doped NiAl2O4/SiO2 nanocomposite materials of compositions 5% NiO , 6% Al2O3, 89% SiO2 and 0.2% CoO , 4.8% NiO , 6% Al2O3, 89% SiO2, respectively, were prepared by a sol,gel process. NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals were grown in a SiO2 amorphous matrix at around 1073 K by heating the dried gels from 333 to 1173 K at the rate of 1 K/min. The formations of NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals in SiO2 amorphous matrix were confirmed through X-ray powder diffraction, Fourier transform infrared spectroscopy, differential scanning calorimeter, transmission electron microscopy (TEM), and optical absorption spectroscopy techniques. The TEM images revealed the uniform distribution of NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals in the amorphous SiO2 matrix and the size was found to be ,5,8 nm. [source] Optical properties of ZnS:Mn nanocrystalsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010F. Ahmed Abstract The optical properties of Mn-doped zinc sulfide (ZnS) nanocrystals embedded in SiO2 matrix are studied by spectroscopic ellipsometry (SE). The crystals are obtained by sequential multi-energy ion implantation of Zn, S, and Mn into a silica layer grown on Si(111) followed by a subsequent annealing for 30 min at 900 °C. The formation of the nanocrystals is evidenced by transmission electron microscopy. The application of a critical-point based model for the analysis of the SE data yields die dielectric function (DF) between 0.6 and 6.5 eV. A pronounced shift of the absorption edge towards higher energies is detected for the nanocrystals In comparison to bulk ZnS (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Properties of Ionic Liquid Confined in Porous Silica MatrixCHEMPHYSCHEM, Issue 9 2010Manish Pratap Singh Abstract Porous silica matrices of different pore sizes with confined ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate) [BMIM] [PF6] were prepared by sol-gel technique using a tetraethyl orthosilicate (TEOS) precursor with an aim to study the changes in physico-chemical properties of ionic liquid on confinement. It is found that on confinement 1) melting point decreases, 2) fluorescence spectra shows a red shift and 3) the vibrational bands are affected particularly those of imadazolium ring, which interacts more with the walls of the silica matrix. Preliminary theoretical calculations suggest that SiO2 matrix interact more with the heterocyclic group of [BMIM] cation than the tail alkyl chain end group resulting in significant changes in the aromatic vibrations. [source] | |||||||||||||