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Simulation Parameters (simulation + parameter)
Selected AbstractsNondestructive Evaluation of Elastic Properties of Concrete Using Simulation of Surface WavesCOMPUTER-AIDED CIVIL AND INFRASTRUCTURE ENGINEERING, Issue 8 2008Jae Hong Kim In this study, to evaluate information of a surface waveform beyond the simple wave velocity, artificial intelligence engines are employed to estimate simulation parameters, that is, the properties of elastic materials. The developed artificial neural networks are trained with a numerical database having secured its stability. In the process, the appropriate shape of the force,time function for an impact load is assumed so as to avoid Gibbs phenomenon, and the proposed principal wavelet-component analysis accomplishes a feature extraction with a wavelet transformed signal. The results of estimation are validated with experiments focused on concrete materials. [source] Decoupling and balancing of space and time errors in the material point method (MPM)INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING, Issue 10 2010Michael Steffen Abstract The material point method (MPM) is a computationally effective particle method with mathematical roots in both particle-in-cell and finite element-type methods. The method has proven to be extremely useful in solving solid mechanics problems involving large deformations and/or fragmentation of structures, problem domains that are sometimes problematic for finite element-type methods. Recently, the MPM community has focused significant attention on understanding the basic mathematical error properties of the method. Complementary to this thrust, in this paper we show how spatial and temporal errors are typically coupled within the MPM framework. In an attempt to overcome the challenge to analysis that this coupling poses, we take advantage of MPM's connection to finite element methods by developing a ,moving-mesh' variant of MPM that allows us to use finite element-type error analysis to demonstrate and understand the spatial and temporal error behaviors of MPM. We then provide an analysis and demonstration of various spatial and temporal errors in MPM and in simplified MPM-type simulations. Our analysis allows us to anticipate the global error behavior in MPM-type methods and allows us to estimate the time-step where spatial and temporal errors are balanced. Larger time-steps result in solutions dominated by temporal errors and show second-order temporal error convergence. Smaller time-steps result in solutions dominated by spatial errors, and hence temporal refinement produces no appreciative change in the solution. Based upon our understanding of MPM from both analysis and numerical experimentation, we are able to provide to MPM practitioners a collection of guidelines to be used in the selection of simulation parameters that respect the interplay between spatial (grid) resolution, number of particles and time-step. Copyright © 2009 John Wiley & Sons, Ltd. [source] Teaching diffraction using computer simulations over the InternetJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 6 2001Th. Proffen Computer simulations are a versatile tool to enhance the teaching of diffraction physics and related crystallographic topics to students of chemistry, materials science, physics and crystallography. Interactive computer simulations are presented, which have been added to a World Wide Web (WWW) based tutorial. A simple WWW interface is used to choose appropriate values for selected simulation parameters. The resulting structure and diffraction pattern are then plotted on the screen. Simulated structures range from a single atom to complex disordered or modulated structures. The simple interface requires no special computing knowledge and allows students to explore systematically the relationship between a real-space structure and the corresponding diffraction pattern. The large function set of the underlying simulation program (DISCUS) makes it easy to tailor the tutorial to a given syllabus by modifying or extending the current interactive examples. [source] Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurementsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2008O. Polgár Abstract On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track-radius and -shape of ion-implantation caused damage in single-crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose-dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track-radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2008Tadayoshi Uechi Abstract We construct 3D Monte Carlo (MC) simulations including the full Coulomb interaction as accurately as possible. In order to achieve this goal, the usual strategy for the MC approach is employed; the Coulomb potential is split into the long-range and the short-range parts. The long-range part of the Coulomb potential is taken into account by solving the Poisson equation, in which the simulation parameters such as mesh size, charged-particle size, time step etc are carefully optimized by performing the particle simulations with turning off artificially all short-ranged scatterings. The short-range part of the Coulomb potential is incorporated into the MC simulations as scattering processes by developing a new scattering model, in which the impurities are localized in real space. It is shown that the present 3D MC simulations successfully explain the entire regime of the electron mobility as a function of impurity concentrations. In addition, it is found for the first time that the plasma frequency is modulated due to localization of the background impurities. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||