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Semiconductor Physics (semiconductor + physics)

Distribution by Scientific Domains
Physics and Astronomy87%

Selected Abstracts

Uniaxial stress study of the Cu,H complex in ZnO

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2006
E. V. Lavrov
The cover picture of the current issue refers to the article by Lavrov and Weber which was selected as Editor's Choice [1]. The picture shows a microscopic model of the Cu,H complex investigated in the paper. The complex consists of a substitutional Cu atom at the Zn site with an H atom located between nearby O and Cu in the basal plane of the ZnO lattice. The atoms are shown in different colors: yellow for copper, red for hydrogen, cyan for oxygen, and grey for zinc. Hydrogen forms a strong bond with the O atom which gives rise to a local vibrational mode at 3192 cm,1 investigated in the paper under uniaxial stress. The c -axis is parallel to the Cu,O bond pointing to the top of the figure. The authors work at the Institute of Applied Physics/Semiconductor Physics, TU Dresden, Germany. [source]

12th International Conference on High Pressure Semiconductor Physics (HPSP-12): Concluding remarks

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 1 2007
M. Cardona
These concluding remarks discuss the attractiveness of Barcelona as a venue for conferences like the HPSP and the highlights of the work presented at the HPSP-12. The discussion is complemented by information concerning the previous eleven HPSP and a historical review of the field. These concluding remarks end with a few bibliometric data which include the development of the field in Spain, and in particular in Barcelona, since 1975. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Hydrostatic pressure effects on the structural and electronic properties of carbon nanotubes

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 14 2004
Rodrigo B. Capaz
This issue's Editor's Choice [1] is a theoretical study of the properties of single-wall carbon nanotubes (SWNTs) under hydro-static pressure. The cover picture is a snapshot of room-temperature molecular dynamics simulations of a chiral (8,7) SWNT at a pressure of 4 GPa, where a symmetry-breaking collapse of the tube into a flat shape is observed. This paper is an invited presentation from the 11th Interna-tional Conference on High Pressure Semiconductor Physics (HPSP-11), held in Berkeley, California, USA, 2,5 August 2004. The Proceedings of this conference series have been published for the fifth time in physica status solidi (b). The first author, Rodrigo Barbosa Capaz, is Associate Professor of Physics at Universidade Federal do Rio de Janeiro and works on electronic properties and computer modeling of materials. [source]

Proceedings of the Tenth International Conference on High Pressure Semiconductor Physics (HPSP-X)

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
Ben MurdinArticle first published online: 30 JAN 200
The Tenth International Conference on High Pressure Semiconductor Physics (HPSP-X) was held as a satellite meeting of the International Conference on the Physics of Semiconductors in Guildford from 5 to 8 August 2002. It brought together scientists and engineers who use high pressure to study the science and technology of semiconductors. The HPSP-X conference reviewed the latest issues and developments in the physics of both bulk and low-dimensional semiconductor materials and devices under pressure. It covered all aspects of fundamental and applied high-pressure semiconductor research, including experimental and theoretical investigations under isotropic or anisotropic stress conditions. Topics such as electronic structures, vibrational and optical properties, transport phenomena, defect states, phase transitions, and novel materials or structures are included in this issue. Following the meetings HPSP-VII in Schwäbisch Gmünd, phys. stat. sol. (b) 198, No. 1 (1996); HPSP-VIII in Thessaloniki, phys. stat. sol. (b) 211, No. 1 (1998), and HPSP-IX in Sapporo, phys. stat. sol. (b) 223, No. 1/2 (2001), the proceedings of this successful conference series are published in physica status solidi for the fourth time. [source]

On 1,dimensional dissipative Schrödinger,type operators their dilations and eigenfunction expansions

MATHEMATISCHE NACHRICHTEN, Issue 1 2003

Abstract We study in detail Schrödinger,type operators on a bounded interval of R with dissipative boundary conditions. The characteristic function of this operator is computed, its minimal self,adjoint dilation is constructed and the generalized eigenfunction expansion for the dilation is developed. The problem is motivated by semiconductor physics. [source]

Nitrides as spintronic materials

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
Tomasz Dietl
The Guest Editors of the Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5), Hiroshi Amano and Takashi Udagawa, have nominated the invited presentation by Tomasz Dietl [1] as Editor's Choice of the present issue of physica status solidi (b). This paper is a progress report on spintronics-related issues in Mn-based III-nitrides as potential diluted magnetic semiconductors. The cover picture shows the computed values of the Curie temperature for various p-type III,V compounds containing 5% of Mn in the S = 5/2 high spin state and 3.5 × 1020 holes per cm3, predicting that TC should exceed room temperature in the Mn-based nitrides. Thomas Dietl is head of the Low-Temperature Physics Group and professor at the Institute of Physics of the Polish Academy of Sciences. He is one of the most experienced researchers in the area of ferromagnetic semiconductors, spin-related phenomena and other current topics of semiconductor physics with many publications and invited talks at conferences and seminars world-wide. The full Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5) are published in physica status solidi (c) , conferences and critical reviews, Vol. 0, No. 7 (November 2003) (ISBN 3-527-40489-9). Conference papers can also be found in phys. stat. sol. (a) 200, No. 1 (2003). [source]

Defect profiles in semiconductor structures

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2007
P. G. Coleman
Abstract Variable-energy positron annihilation spectroscopy (VEPAS) has found applications in structural and electronic analysis of thin films and near-surface layers, nanoporous materials, ion implantation, silicon photonics, and vacancy engineering. In all this applied work it is essential that VEPAS is treated as a normal member of the arsenal of spectroscopies available to the semiconductor research community. Examples are presented of how useful insights into current problems in semiconductor physics and technology have been gained by combinations of VEPAS and other techniques such as secondary ion mass spectrometry, transmission electron microscopy, electrical characterization, and optical techniques such as photoluminescence and optically-detected magnetic resonance. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]