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Semianalytical Solutions (semianalytical + solution)

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Semianalytical Solutions for Stream Depletion in Partially Penetrating Streams

GROUND WATER, Issue 1 2004
Xunhong Chen
In the analysis of streamflow depletion, the Hunt (1999) solution has an important advantage because it considers a partially penetrating stream. By extending the Hunt drawdown solution, this paper presents semianalytical solutions for gaining streams that evaluate the induced stream infiltration and base flow reduction separately. Simulation results show that for a given ,h (the initial hydraulic head difference between stream and aquifer beneath the channel), the base flow reduction is in direct proportion to the product of streambed leakage (,) and the distance between pumping well and stream (L), and the induced stream infiltration is in inverse proportion to ,L. ,h has a significant effect on the ratio of stream infiltration to base flow reduction. The results from the semianalytical solutions agree well with those from MODFLOW simulations. The semianalytical solutions are useful in the verification of numerical simulations and in the analysis of stream-aquifer interactions where water quantity or quality is concerned. [source]

A simulation-based method for the comprehensive analysis of effective lifetime from photoconductance

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 2 2007
G. Bueno
Abstract This paper presents a method for estimating recombination parameters in the volume and surface of solar cell precursors throughout the manufacturing process, taking into account several effects that are generally neglected. The technique is based on the comprehensive reconstruction of the effective lifetime assuming a set of fundamental parameters and its comparison to the experimental data obtained from the photoconductance measured under uniform generation in quasi-steady state conditions. The analysis starts from the semianalytical solution of the minority carrier profiles in the structures under test. This analysis overcomes the usual flat profile approximation and presents important advantages. It allows the asymmetry presented by the solar cell precursors to be taken into account and deals with a wide range of surface conditions: emitters, bare silicon or dielectric passivations. The model also accounts for the effect of the electric field in the volume, and implements several phenomena that are sometimes neglected but are relevant when measuring industrial solar cells precursors: the injection dependence of mobilities and recombination lifetimes, the presence of non-recombinant traps and the Depletion Region Modulation effect. The estimation technique requires uniform generation, which greatly facilitates the calculation of the carrier profiles and allows for a simple method for the auto calibration of the light absorption. Copyright © 2006 John Wiley & Sons, Ltd. [source]