Schottky Contacts (schottky + contact)

Distribution by Scientific Domains


Selected Abstracts


Schottky-Gated Probe-Free ZnO Nanowire Biosensor

ADVANCED MATERIALS, Issue 48 2009
Ping-Hung Yeh
A nanowire-based nanosensor for detecting biologically and chemically charged molecules that is probe-free and highly sensitive is demonstrated. The device relies on the nonsymmetrical Schottky contact under reverse bias (see figure), and is much more sensitive than the device based on the symmetric ohmic contact. This approach serves as a guideline for designing more practical chemical and biochemical sensors. [source]


ZnO-based photodetector with internal photocurrent gain

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2010
L. A. Kosyachenko
Abstract The photoresponsive structures prepared by magnetron sputtering of ZnO on p-Si substrates followed by vacuum evaporation of semitransparent Ni film on ZnO surface are investigated. The obtained Ni/n-ZnO/p-Si structures show high sensitivity that sharply increases with increase in applied voltage. Under a bias voltage of 5,V, the responsivities at ,,=,390,nm and ,,=,850,nm were equal to 210 and 110,A/W, which correspond to quantum efficiencies of 655 and 165, respectively. It is assumed that the observed strong response is attributed to internal gain in the Ni/n-ZnO/p-Si phototransistor structure containing Ni/n-ZnO Schottky contact as the emitter junction and n-ZnO/p-Si heterostructure as the collector junction. The response time of the device is ,10,7,s. Alternative mechanisms of photocurrent multiplication in such structures are also discussed. [source]


Organic Single-Crystal Schottky Gate Transistors

ADVANCED MATERIALS, Issue 36 2009
Toshihiko Kaji
Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design. [source]


Schottky contacts to hydrogen doped ZnO

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008
R. Schifano
Abstract High resistivity (,1 k, cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation. The implantation has been performed with multiple energies in order to form a box-like profile with a depth of 4 ,m and two different concentrations of 8 1017 H/cm3 and 1.5 1018 H/ cm3. A subsequent annealing at 200 C for 30 min in N2 resulted in the formation of a highly conductive layer. Pd con- tacts deposited on the implanted side showed rectifying behaviour by up to three orders of magnitude. However by capacitance vs. voltage (C ,V) technique a carrier concentration significantly lower than the one expected according to the implanted H content was measured suggesting the presence of a high density of compensating centers and/or an incomplete activation of H as a donor. ( 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


AlGaN metal-semiconductor-metal structure for pressure sensing applications

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006
Z. Hassan
Abstract We report on the effects of hydrostatic pressure on an Alx Ga1,xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Alx Ga1,xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]