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Schottky Barrier Diodes (schottky + barrier_diode)

Distribution by Scientific Domains

Physics and Astronomy	50%

Selected Abstracts

ChemInform Abstract: Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes.

CHEMINFORM, Issue 45 2001
G. Venkata Rao
Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source]

Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 5 2008
S. S. Patel
Abstract An Al/p-AgGaTe2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electrical characteristics of Al/polyindole Schottky barrier diodes.

JOURNAL OF APPLIED POLYMER SCIENCE, Issue 5 2009

Abstract In this study, the forward and reverse bias current,voltage (I,V), capacitance,voltage (C,V), and conductance,voltage (G/,,V) characteristics of Al/polyindole (Al/PIN) Schottky barrier diodes (SBDs) were studied over a wide temperature range of 140,400 K. Zero-bias barrier height ,B0(I,V), ideality factor (n), ac electrical conductivity (,ac), and activation energy (Ea), determined by using thermionic emission (TE) theory, were shown fairly large temperature dispersion especially at lower temperatures due to surface states and series resistance of Al/PIN SBD. I,V characteristics of the Al/PIN SBDs showed an almost rectification behavior, but the reverse bias saturation current (I0) and n were observed to be high. This high value of n has been attributed to the particular distribution of barrier heights due to barrier height inhomogeneities and interface states that present at the Al/PIN interface. The conductivity data obtained from G/,V measurements over a wide temperature range were fitted to the Arrhenius and Mott equations and observed linear behaviors for ,ac vs. 1/T and ln ,ac vs. 1/T1/4 graphs, respectively. The Mott parameters of T0 and K0 values were determined from the slope and intercept of the straight line as 3.8 × 107 and 1.08 × 107 Scm,1K1/2, respectively. Assuming a value of 6 × 1012 s,1 for ,0, the decay length ,,1 and the density states at the Fermi energy level, N(EF) are estimated to be 8.74 Å and 1.27 × 1020 eV,1cm,3, respectively. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009 [source]

Anomalous capacitance,voltage characteristics of Pt,AlGaN/GaN Schottky diodes exposed to hydrogen

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
Yoshihiro Irokawa
Abstract We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a low-frequency capacitance-voltage (C-V) technique. At a frequency of 1kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen-related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]