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Root Mean Square Roughness (root + mean_square_roughness)

Distribution by Scientific Domains

Polymers and Materials Science	50%

Selected Abstracts

Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne),

ADVANCED MATERIALS, Issue 8 2004
W. Pitcher
A new synthesis of the silicon-network-backbone polymer poly(methylsilyne) gives a material that is easily converted by pyrolysis to smooth continous films of stoichiometric silicon carbide (see Figure). The films are adherent to the silicon or alumina substrates, and show root mean square roughness of 169,Å over a 500,,m range. Applications in electronics are envisaged. [source]

Synthesis of organic,inorganic hybrid polymeric nanocomposites for the hard coat application

JOURNAL OF APPLIED POLYMER SCIENCE, Issue 6 2007
Chuan Hsiao Shu
Abstract An organic,inorganic hybrid polymeric nanocomposite has been synthesized for making UV-curable hard coats. This nanocomposite consists of nano-sized colloidal silica functionalized with vinyltriethoxysilane (VTES) and dendritic acrylic oligomers (DAO) which have been formed earlier via a reaction of ethylenediamine (EDA) with trimethylopropane triacrylate (TMPTA). Applied as a hard coat on top of a polyethylene terephthalate (PET) film, this nanocomposite has a short UV-cure time and the cured coat has an enhanced thermal decomposition temperature (Td), 89,90% transparency, increased hardness up to 3H, better adhesion up to 4B, and a flat surface with a root mean square roughness of 2,4 nm. The preparation as well as the characterization of the constituting species and the final hybrid are described in detail. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 103: 3985,3993, 2007 [source]

Effect of rapid thermal annealing on the electrical and structural properties of Ru/n-InP (100) Schottky rectifiers

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2009
V. Janardhanam
Abstract The effects of rapid thermal annealing on the electrical and structural properties of Ru/n-InP Schottky diode have been investigated by current,voltage (I,V), capacitance,voltage (C,V), X-ray diffraction (XRD) and secondary ion-mass spectroscopy (SIMS) techniques. Results showed that the Schottky barrier height of the as-deposited Ru/n-InP has been found to be 0.53,eV (I,V) and 0.69,eV (C,V). The Schottky barrier height increased to 0.54,eV (I,V) 0.73,eV (C,V), 0.56,eV (I,V) and 0.78,eV (C,V) after annealing at 300 and 400,°C for 1,min in nitrogen ambient. Further increase in the annealing temperature up to 500,°C resulted in the increase of barrier height to 0.57,eV (I,V) and 0.80,eV (C,V). However, after annealing at temperature 600,°C, the barrier height decreases to 0.51,eV (I,V) and 0.67,eV (C,V). Based on the results of XRD and SIMS studies, the formation of indium phases at Ru/n-InP interface could be the reason for the increase of barrier height upon annealing at 500,°C. The atomic force microscopy results showed that the surface morphology of the contact annealed at 600,°C is fairly smooth with a root mean square roughness of 1.8,nm. [source]

Characterisation of rough reflecting substrates incorporated into thin-film silicon solar cells

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 6 2006
V. Terrazzoni Daudrix
Abstract Four different categories of rough reflecting substrates as well as a single periodic grating are incorporated and tested within n-i-p type amorphous silicon (a-Si:H) solar cells. Each category is characterised by its own texture shape; dimensions were varied within the categories. Compared to flat reflecting substrates, gains in short-circuit current density (Jsc) up to 20% have been obtained on rough reflecting plastic substrates. As long as (1) the characteristic dimensions of the textures are lower than the involved light wavelengths, (2) the textures do not present any defects i.e. as long as they do not have large craters or bumps spread over the surface, the root mean square roughness (,RMS) as well as the ratio of average feature height to average period can be used to evaluate the gain in Jsc; if each category of randomly textured substrates is considered separately, the haze factor can be used to estimate ,RMS and thereby the gains in Jsc. Copyright © 2006 John Wiley & Sons, Ltd. [source]