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Reflection High Energy Electron Diffraction (reflection + high_energy_electron_diffraction)

Distribution by Scientific Domains

Physics and Astronomy	80%

Selected Abstracts

Book Review: Reflection High Energy Electron Diffraction.

ADVANCED MATERIALS, Issue 22 2005
By Ayahiko Ichimiya, Philip I. Cohen.
No abstract is available for this article. [source]

Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 5 2008
R. Gutt
Abstract Gallium nitride thin films were grown on silicon carbide (0001) by plasma-assisted molecular beam epitaxy (PAMBE). The samples were cooled down in nitrogen plasma and characterized in situ by reflection high energy electron diffraction (RHEED), photoelectron spectroscopy (XPS/UPS), and atomic force microscopy (AFM) revealing stoichiometric and smooth GaN films virtually free of contaminations. We present valence band data obtained by UPS with strong emission from surface states inside the fundamental band gap. These states and the observed 2 × 2 surface reconstruction are highly sensitive towards residual molecules. Once these surface states have disappeared the original state could not be recovered by surface preparation methods underlining the necessity of in situ investigations on as-grown surfaces. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Field emission from surface-modified heavily phosphorus-doped homoepitaxial (111) diamond

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2007
Takatoshi Yamada
Abstract Field emission from heavily phosphorus-doped homoepitaxial (111) diamonds after surface modifications are discussed. To develop a model for emission, we applied X-ray photoelectron spectroscopy (XPS) to characterize surface properties of H-plasma treated, oxidized and carbon-reconstructed surfaces. In addition, reflection high energy electron diffraction (RHEED) is used to evaluate atomic arrangements. Atomic force microscopy (AFM) is used to investigate surface morphologies. From AFM, no major difference is observed between H-terminated, oxidized and carbon reconstructed surfaces. Field emission proper- ties of carbon reconstructed surfaces show a lower threshold than hydrogen-terminated or oxidized surfaces. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2004
M. Halbwax
Abstract The Ge growth at 330 °C by ultrahigh vacuum chemical vapour deposition is investigated in real time by reflection high energy electron diffraction (RHEED) in combination with atomic force microscopy and Rutherford back scattering spectrometry (RBS). The Stranski-Krastanov-related 2D to 3D transition is avoided at low temperature and the major part of the relaxation process occurs during the deposition of the first two monolayers. The very low growth rate observed during this first step is related to the deposition of Ge on Si. Beyond 2 deposited MLs, the growth rate increases drastically due to a complete coverage of Si by Ge. Finally, the deposition of Ge at 330 °C results in an in-plane lattice parameter approaching 90% of that of Ge bulk and a flat surface with rms roughness of 0.6 nm for a film thickness lower than 30 nm. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

AlN/GaN superlattices: strain relaxation

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006
E. Bellet-Amalric
Abstract A serie of AlN/GaN superlattices with thin period (fewer than 6 monolayers) was grown by plasma-assisted molecular beam epitaxy. Their strain relaxation is address by in-situ reflection high energy electron diffraction (RHEED). Three distinct phenomena can be distinguished; two of them are related to a dislocation introduction mechanism (at the first monolayers or all along the sample) and the third correspond to a periodic elastic strain relaxation. Their relative importance depends on growth conditions and should be taken into account while designing a complete superlattice structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]