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Rectifying Behavior (rectifying + behavior)
Selected AbstractsElectrochemical Method for Synthesis of a ZnFe2O4/TiO2 Composite Nanotube Array Modified Electrode with Enhanced Photoelectrochemical ActivityADVANCED FUNCTIONAL MATERIALS, Issue 13 2010Yang Hou Abstract An electrode with intimate and well-aligned ZnFe2O4/TiO2 composite nanotube arrays is prepared via electrochemical anodization of pure titanium foil in fluorine-containing ethylene glycol, followed by a novel cathodic electrodeposition method. The deposition of ZnFe2O4 is promoted in the self-aligned, vertically oriented TiO2 nanotube arrays but minimized at the tube entrances. Thus, pore clogging is prevented. Environmental scanning electron microscopy, energy-dispersive X-ray spectra, high-resolution transmission electron microscopy, X-ray diffraction patterns, and X-ray photoelectron spectroscopy indicate that the as-prepared samples are highly ordered and vertically aligned TiO2 nanotube arrays with ZnFe2O4 nanoparticles loading. The TiO2 nanotubes are anatase with the preferential orientation of <101> plane. Enhanced absorption in both UV and visible light regions is observed for the composite nanotube arrays. The current,voltage curve of ZnFe2O4 -loaded TiO2 nanotube arrays reveals a rectifying behavior. The enhanced separation of photoinduced electrons and holes is demonstrated by surface photovoltage and photocurrent measurements. Meanwhile, the photoelectrochemical investigations verify that the ZnFe2O4/TiO2 composite nanotube array modified electrode has a more effective photoconversion capability than the aligned TiO2 nanotube arrays alone. In addition, the photoelectrocatalytic ability of the novel electrode is found enhanced in the degradation of 4-chlorophenol. [source] Modification of Electronic Structures of a Carbon Nanotube by Hydrogen FunctionalizationADVANCED MATERIALS, Issue 24 2002K.S. Kim A rigorous method to engineer the electronic structure of carbon nanotubes from metallic to semiconducting is reported (see inside front cover). An intramolecular junction in carbon nanotube is fabricated, where half of the nanotube is masked by a silicon oxide thin film. Functionalization of the nanotube by atomic hydrogen leads to the formation of an intramolecular junction, resulting in clear rectifying behavior at room temperature. This represents an important step towards the practical realization of nanotube-based nanotransistors. [source] ta-C/Si heterojunction diodes with apparently giant ideality factorsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010Marc Brötzmann Abstract A common feature of many wide band gap heterojunction diodes is an unexplained large ideality factor n > 2. In this context we investigate the diode characteristics of heterojunction diodes consisting of a crystalline semiconductor material such as Si covered with a thin semiconducting film of amorphous or disordered material. As thin amorphous film we use tetrahedral amorphous carbon (ta-C). These heterojunctions exhibit a pronounced rectifying behavior, low saturation current and low parasitic currents. Moreover, we observe an apparently giant ideality factor reaching values of n > 75. As a consequence, the turn on voltage is around 3 , 10 V and the I-V curves can be measured for bias up to 40 V without reaching saturation or electrical breakdown. We present a quantitative model for the unusual diode characteristics of these Metal , Amorphous Semiconductor , Semiconductor diodes (MASS-diodes). We demonstrate that the I-V characteristics of the heterojunctions are well described by a serial arrangement of an ideal Schottky-diode, a Frenkel-Poole type resistance and an Ohmic contact resistance, emulating a p-n- or Schottky diode characteristic with giant ideality factor and referred to as the FPID-model. We propose that heterojunctions exhibiting apparently large ideality factors n , 2 may possess an interfacial disordered or amorphous layer with Frenkel-Poole conduction properties. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] M -plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c -plane patterned templatesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008Christopher A. Schaake Abstract In this work we demonstrate a light emitting diode (LED) with m -plane quantum wells fabricated on a (000) template. N-polar, n-type GaN was grown by MOCVD on vicinal sapphire substrates. Stripes, measuring 500 nm wide, 500 nm tall and spaced 2 ,m apart, were etched parallel to the ,110, direction leading to sidewalls that are approximately {100}. Sputtered AlN was used as a regrowth mask on the c -plane surfaces. An active region consisting of 5 InGaN quantum wells and GaN barriers followed by p-type was grown. The regrowth occurred mostly on the exposed m -plane sidewalls, leading to lateral growth in the ,100, direction. The LED was processed using conventional methods. A thick metal contact was used to connect the p-regions together. Current vs. voltage measurements showed good rectifying behavior with a turn on of about 6 volts. On-wafer electroluminescence measurements revealed a peak wavelength of 422 nm. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||