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Radiative Lifetimes (radiative + lifetime)
Selected AbstractsExperimental Ti i oscillator strengths and their application to cool star analysisMONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY, Issue 4 2006R. J. Blackwell-Whitehead ABSTRACT We report experimental oscillator strengths for 88 Ti i transitions covering the wavelength range 465,3892 nm, 67 of which had no previous experimental values. Radiative lifetimes for 13 energy levels, including the low energy levels 3d2(3F) 4s4p (3P) z 5D°j, have been measured using time-resolved laser-induced fluorescence. Intensity-calibrated Ti i spectra have been measured using Fourier transform spectroscopy to determine branching fractions for the decay channels of these levels. The branching fractions are combined with the radiative lifetimes to yield absolute transition probabilities and oscillator strengths. Our measurements include 50 transitions in the previously unobserved infrared region , > 1.0 ,m, a region of particular interest to the analysis of cool stars and brown dwarfs. [source] Studies on the growth and optical characterization of dysprosium gadolinium oxalate single crystalsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 2 2004A. Elizebeth Abstract Preparation and optical characterization of dysprosium gadolinium oxalate (DGO) single crystal is reported. The crystals were grown using silica gel technique, by the controlled reaction of rare earth nitrates with oxalic acid. Crystals were characterized using X-ray powder diffraction, optical absorption and fluorescence studies. Radiative transition probability, fluorescence branching ratio and radiative lifetime of Dy3+ in the crystal are evaluated by the parameterization of the absorption spectrum by the Judd-Ofelt theory. The recorded fluorescence spectrum showed two well resolved peaks at 480 nm and 571 nm and are assigned to the transitions from 4F9/2 , 6H15/2 and 6H13/2 of Dy3+. Stimulated emission crossection and optical gain of these transitions are also evaluated. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Rational Design of Chelating Phosphine Functionalized Os(II) Emitters and Fabrication of Orange Polymer Light-Emitting Diodes Using Solution Process,ADVANCED FUNCTIONAL MATERIALS, Issue 2 2008M. Cheng Abstract A new series of charge neutral Os(II) pyridyl azolate complexes with either bis(diphenylphosphino)methane (dppm) or cis -1,2-bis(diphenylphosphino)ethene (dppee) chelates were synthesized, and their structural, electrochemical, photophysical properties and thermodynamic relationship were established. For the dppm derivatives 3a and 4a, the pyridyl azolate chromophores adopt an eclipse orientation with both azolate segments aligned trans to each other, and with the pyridyl groups resided the sites that are opposite to the phosphorus atoms. In sharp contrast, the reactions with dppee ligand gave rise to the formation of two structural isomers for all three kind of azole chromophores, with both azolate or neutral heterocycles (i.e., pyridyl or isoquinolinyl fragments) located at the mutual trans -disposition around the Os metal (denoted as series of a and b complexes). These chelating phosphines Os(II) complexes show remarkably high thermal stability, among which and several exhibit nearly unitary phosphorescence yield in deaerated solution at RT. A polymer light-emitting device (PLED) prepared using 0.4 mol % of 5a as dopant in a blend of poly(vinylcarbazole) (PVK) and 30 wt % of 2- tert -butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) exhibits yellow emission with brightness of 7208 cd m,2, an external quantum efficiency of 10.4 % and luminous efficiency of 36.1 cd A,1 at current density of 20 mA cm,2. Upon changing to 1.6 mol % of 6a, the result showed even better brightness of 9212 cd m,2, external quantum efficiency of 12.5 % and luminous efficiency of 46.1 cd A,1 at 20 mA cm,2, while the max. external quantum efficiency of both devices reaches as high as 11.7 % and 13.3 %, respectively. The high PL quantum efficiency, non-ionic nature, and short radiative lifetime are believed to be the determining factors for this unprecedented achievement. [source] Thin film formation by rf sputtering with EuGa2S4 target and photoluminescence of the prepared filmsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006M. Dohi Abstract Thin films were deposited on Si and fused quartz substrates by rf sputtering with EuGa2S4 target. The deposited films were annealed in the mixed atmosphere of S and He, which led crystallization of the film from amorphous phase. Photoluminescence of the annealed films, characteristic to the Eu2+ ion, was observed with room temperature quantum efficiency of 17%. Decay time constants at room temperature and liquid nitrogen temperature were measured to be 140 ns, and 430 ns, respectively. The latter value is close to the reported radiative lifetime of the EuGa2S4 crystal. Construction possibility of a surface-emitting laser is discussed with data on behaviour of excitation intensity dependent time-resolved spectra under pulsed laser excitation and on surface roughness of the film. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Extensive theoretical studies on the low-lying electronic states of indium monochloride cation, InCl+JOURNAL OF COMPUTATIONAL CHEMISTRY, Issue 1 2005Wenli Zou Abstract The global potential energy curves for the 14 low-lying doublet and quartet ,-S states of InCl+ are calculated at the scalar relativistic MR-CISD+Q (multireference configuration interaction with single and double excitations, and Davidson's correction) level of theory. Spin-orbit coupling is accounted for via the state interaction approach with the full Breit,Pauli Hamiltonian, which leads to 30 , states. The computed spectroscopic constants of nine bound ,-S states and 17 bound , states are in good agreement with the available experimental data. The transition dipole moments and Franck,Condon factors of selected transitions are also calculated, from which the corresponding radiative lifetimes are derived. © 2004 Wiley Periodicals, Inc. J Comput Chem 26: 106,113, 2005 [source] Experimental Ti i oscillator strengths and their application to cool star analysisMONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY, Issue 4 2006R. J. Blackwell-Whitehead ABSTRACT We report experimental oscillator strengths for 88 Ti i transitions covering the wavelength range 465,3892 nm, 67 of which had no previous experimental values. Radiative lifetimes for 13 energy levels, including the low energy levels 3d2(3F) 4s4p (3P) z 5D°j, have been measured using time-resolved laser-induced fluorescence. Intensity-calibrated Ti i spectra have been measured using Fourier transform spectroscopy to determine branching fractions for the decay channels of these levels. The branching fractions are combined with the radiative lifetimes to yield absolute transition probabilities and oscillator strengths. Our measurements include 50 transitions in the previously unobserved infrared region , > 1.0 ,m, a region of particular interest to the analysis of cool stars and brown dwarfs. [source] Growth of GaN quantum dots on nonpolar A -plane SiC by molecular-beam epitaxyPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 15 2006S. Founta Abstract We report on A -plane GaN quantum dots in AlN, grown on A -plane 6H SiC substrates by plasma-assisted molecular-beam epitaxy. AFM imaging revealed a strong alignment of the dots along the [100] direction that we correlated with the anisotropic morphology of the AlN buffer layer. A vertical correlation of these dots was evidenced by high resolution transmission electron microscopy on superlattice samples with an AlN spacer thickness of 5 nm. Time-resolved spectroscopy performed on both C -plane and A -plane samples revealed much shorter radiative lifetimes for the A -plane dots, indicating a strong reduction of the internal electric field with respect to the one present in their C -plane counterparts. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Optical spectra of Tm3+ -doped YAl3(BO3)4 single crystalsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2007E. Cavalli Abstract Flux grown YAl3(BO3)4 (YAB) crystals doped with Tm3+ have been characterised by optical spectroscopy techniques. The absorption and emission spectra in the UV-VIS-NIR region have been measured at 10 and 298 K. The visible emission decay profiles have been measured at room temperature. The low temperature spectra have been used to obtain the energy level scheme of the optically active ion in YAB. The Judd-Ofelt parametrization scheme has been applied to the analysis of the room temperature absorption spectra in order to evaluate the intensity parameters, the branching ratios and the radiative lifetimes of the emitting states. These have been compared with the experimental values. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||