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Quality Films (quality + film)

Distribution by Scientific Domains
Polymers and Materials Science100%

Selected Abstracts

Nanoscale Phase Separation and High Photovoltaic Efficiency in Solution-Processed, Small-Molecule Bulk Heterojunction Solar Cells

ADVANCED FUNCTIONAL MATERIALS, Issue 19 2009
Bright Walker
Abstract Research relating to organic solar cells based on solution-processed, bulk heterojunction (BHJ) films has been dominated by polymeric donor materials, as they typically have better film-forming characteristics and film morphology than their small-molecule counterparts. Despite these morphological advantages, semiconducting polymers suffer from synthetic reproducibility and difficult purification procedures, which hinder their commercial viability. Here, a non-polymeric, diketopyrrolopyrrole-based donor material that can be solution processed with a fullerene acceptor to produce good quality films is reported. Thermal annealing leads to suitable phase separation and material distribution so that highly effective BHJ morphologies are obtained. The frontier orbitals of the material are well aligned with those of the fullerene acceptor, allowing efficient electron transfer and suitable open-circuit voltages, leading to power conversion efficiencies of 4.4,±,0.4% under AM1.5G illumination (100,mW cm,2). Small molecules can therefore be solution processed to form high-quality BHJ films, which may be used for low-cost, flexible organic solar cells. [source]

Tuning and Transcription of the Supramolecular Organization of a Fluorescent Silsesquioxane Precursor into Silica-Based Materials through Direct Photochemical Hydrolysis,Polycondensation and Micropatterning

ADVANCED FUNCTIONAL MATERIALS, Issue 3 2009
Xavier Sallenave
Abstract A new fluorescent silsequioxane precursor with tuned optical properties and controlled aggregation properties is designed. The two cyclohexyl moieties introduced in the molecular structure allow the formation of very good quality films. The J-aggregated structure is transcribed into the solid by photoacid-catalyzed hydrolysis,polycondensation. Aggregation of the chromophores is reduced and highly fluorescent materials are obtained. The photoacid generator lies on the surface of the homogeneous layer of the sol,gel precursor. This phase separation presents several advantages, including UV protection of the chromophore and easy removal of the PAG. The first example of chemical amplification in the photolithography of the conjugated silsesquioxane precursor is demonstrated. As hydrolysis,polycondensation could be achieved in a controlled way by UV exposure, chemically amplified photolithography is achieved by irradiating a composite film (,110,nm thick) on silicon wafer by using a copper TEM grid as shadow mask. The pattern is produced uniformly on a miscroscopic scale of 3,mm, the photopatterned pixels remaining highly fluorescent. The sizes of the photolithographed pixels correspond to the sizes of the rectangular holes of the 300,×,75 mesh grid (hole: 63,<$>,<$>m,×,204,<$>,<$>m). [source]

Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors

ADVANCED MATERIALS, Issue 45 2009
Xiaolong Du
Abstract ZnO is a wide-bandgap (3.37,eV at room temperature) oxide semiconductor that is attractive for its great potential in short-wavelength optoelectronic devices, in which high quality films and heterostructures are essential for high performance. In this study, controlled growth of ZnO-based thin films and heterostructures by molecular beam epitaxy (MBE) is demonstrated on different substrates with emphasis on interface engineering. It is revealed that ultrathin AlN or MgO interfacial layers play a key role in establishing structural and chemical compatibility between ZnO and substrates. Furthermore, a quasi-homo buffer is introduced prior to growth of a wurtzite MgZnO epilayer to suppress the phase segregation of rock-salt MgO, achieving wide-range bandgap tuning from 3.3 to 4.55,eV. Finally, a visible-blind UV detector exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si and a solar-blind UV detector using MgZnO as an active layer are fabricated by using the growth techniques discussed here. [source]

UV-photodimerization in uracil-substituted dendrimers for high density data storage

JOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 19 2007
Brian Lohse
Abstract Two series of uracil-functionalized dendritic macromolecules based on poly (amidoamine) PAMAM and 2,2-bis(hydroxymethylpropionic acid) bis-MPA backbones were prepared and their photoinduced (2,+2,) cycloaddition reactions upon exposure to UV light at 257 nm examined. Dendrimers up to 4th generation were synthesized and investigated as potential materials for high capacity optical data storage with their dimerization efficiency compared to uracil as a reference compound. This allows the impact of increasing the generation number of the dendrimers, both the number of chromophores, as well as the different steric environments, on the performance of each series of dendrimers to be investigated. The (uracil)12 -[G-2]-bis-MPA and (uracil)8 -[G-1]-PAMAM were observed to have high dimerization efficiency in solution with different behavior being observed for the PAMAM and bis-MPA dendrimers. The dendrimers with the best dimerization efficiency in solution were then examined in the solid state as thin films cast on quartz plates, and their film qualities along with their photodimerization performance studied. High quality films with a transmission response of up to 70% in 55 s. when irradiated at 257 nm with an intensity of 70 mW/cm2 could be obtained suggesting future use as recording media for optical data storage. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4401,4412, 2007 [source]