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Quantum Dot Superlattices (quantum + dot_superlattice)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006
F. Guillot
Abstract We report on the controlled growth of Si doped GaN/AlN quantum dot (QD) superlattices, in order to tailor their intersubband absorption within the 1.3,1.5 µm telecommunication wavelengths. The QD size is tuned by modifying the amount of GaN in the QDs and the growth temperature. Silicon can be incorporated in the QDs to populate the first electronic level, without significant perturbation of the QD morphology. As a proof of the capability of these structures for infrared detection, a quantum-dot intersubband photodetector at 1.38 µm with lateral carrier transport is demonstrated. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2003
B. Ilahi
Abstract InAs/GaAs vertically stacked self-assembled quantum dot (QD) structures with different GaAs spacer layer thicknesses are grown by solid source molecular beam epitaxy (SSMBE) and investigated by transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. An increase in the polarization anisotropy is observed when the spacer layer thickness decreases. For a 10 monolayer (ML) thick inter-dots GaAs spacer, the TEM image shows an increase in the QD size when moving to the upper layer accompanied by the generation of dislocations. Consequently, the corresponding temperature-dependant PL properties are found to exhibit an unusual behaviour. The main PL peak is quenched at a temperature around 190 K giving rise to a broad background correlated with the formation of a miniband in the growth direction due to the strong interlayer coupling. For a thicker GaAs spacer layer (30 ML), multilayer QDs align vertically in stacks with no apparent structural defects. Over the whole temperature range, the excitonic band energies are governed by the Varshni empirical relation using InAs bulk parameters and the PL line width shows a slight monotonic increase. For a thinner GaAs interlayer, the thermal activation energies of the carrier emission out of the quantum dots are found to be considerably small (about 25 meV) due to the existence of defects. By combining these structural and optical results, we can conclude that a thinner GaAs spacer has a poorer quality. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Mechanisms of semiconductor nanostructure formation

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003
R. S. Goldman
Abstract We have examined the formation mechanisms of a variety of semiconductor nanostructures, including phase separation-induced alloy nanostructures and strain-induced self-assembled quantum dots. Using data from cross-sectional scanning tunneling microscopy, in conjunction with X-ray reciprocal space maps, we have developed new models for self-ordering of InAs/GaAs quantum dot superlattices and spontaneous lateral phase separation in InAlAs alloys. These models are likely to be applicable to a wide range of heteroepitaxial semiconductor nanostructures. [source]

Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2009
A. Cros
Abstract Spatially resolved confocal ,-Raman and ,-photoluminescence experiments were performed to analyze the vibrational and optical properties of GaN/AlN quantum dots as a function of depth. Two approaches have been followed. First, spectra were taken by defocusing the microscope objective at various depths on the sample surface. In a second set of experiments a bevel at an angle of 20° with respect to the surface normal was prepared by mechanical polishing of the surface, and spectra were taken across the bevel. The E2h vibrational modes ascribed to the GaN QDs and the AlN spacer redshift towards the surface, indicating the progressive relaxation of the QDs and a considerable increase of the tensile strain in the AlN spacer. The photoluminescence is found to blueshift and narrow towards the surface. This behaviour is ascribed to the decrease of the QD internal electric field as a consequence of the relaxation. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]