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Quantum Dot Laser (quantum + dot_laser)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2009
D. Zhou
Abstract InAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 ,m. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Internal-loss-limited maximum operating temperature and characteristic temperature of quantum dot laser

LASER PHYSICS LETTERS, Issue 4 2007
L. Jiang
Abstract Carrier-density-dependent internal optical loss sets an upper limit for operating temperatures and considerably reduces the characteristic temperature of a quantum dot laser. Such internal loss also constrains the shallowest potential well depth and the smallest tolerable size of a quantum dot at which the lasing can be attained. At the maximum operating temperature or when any parameter of the structure is equal to its critical tolerable value, the characteristic temperature drops to zero. (© 2007 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Output power saturation in InAs/GaAs quantum dot lasers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2003
M. Wasiak
Abstract An attempt has been made to understand the lasing properties of self-assembled InAs/GaAs quantum dots and to describe saturation effects in quantum dot level populations. The new, improved rate equation model has been developed. The impact of carrier relaxation and level depopulation inside quantum dots on lasing properties, in particular on gain depressing and output power saturation, is discussed. [source]