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Quantum Dot Arrays (quantum + dot_array)
Selected AbstractsRoom temperature electroluminescence from multilayer GeSi heterostructuresPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2006A. A. Tonkikh Abstract Details of silicon diodes with Ge/Si multilayer quantum dot heterostructures embedded in the Si p,n junction grown by molecular beam epitaxy emitting in the range of 1.4,1.7 µm at room temperature and continuous injection pumping are discussed. Output power of the light emitting diode reaches 1 µW/cm2 at applied current density of 2 A/cm2. Photoluminescence and transmission electron microscopy show that the origin of intense luminescence is defect free stacked Ge quantum dot array formed inside the structure. It is shown that doping by antimony improves structure quality and increases photoluminescence efficiency at room temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Shot noise in tunneling through a quantum dot arrayPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2003G. Kiesslich Abstract The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression. [source] Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowingPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2010M. B. Smirnov Abstract The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account exciton,phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays. [source] Kinetically controlled engineering of quantum dot arraysPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003V. G. Dubrovskii Abstract A kinetic model for the formation of arrays of coherent strained islands is developed. The derived expressions provide a detailed characterization of quantum dot arrays in terms of island size and density as functions of substrate temperature, growth rate, exposition time and the amount of deposit. The obtained results give a guideline to the kinetically controlled engineering of quantum dot arrays with required structural properties. [source] Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowingPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2010M. B. Smirnov Abstract The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account exciton,phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays. [source] | ||||||||||