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Quantum Cascade Lasers (quantum + cascade_laser)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003
Bálint P
The EXMATEC workshops are a series of biannial conferences with the aim to bring together research and development specialists involved in compound semiconductor material physics, chemistry, process technology, characterization and device fabrication. EXMATEC 2002 is the continuation of successful meetings, previously held in Lyon, Parma, Freiburg, Cardiff and Heraklion. The central topics were development, improvement and application of new and advanced methods in the fabrication and evaluation of compound semiconductor materials and structures to develop understanding of the interrelationship between structural, electrical and other material properties and device characteristics, such as performance, reliability, reproducibility, lifetime, yield, etc. The conference topics apply to all compound semiconductor materials (III,V, II,VI, IV,IV, II,IV,V2), related structures and processing steps (from substrate and epitaxial growth to complete devices) and cover instrumentation and characterization issues. The full Proceedings of EXMATEC 2002 are published in the second issue of the new journal series physica status solidi , conferences Vol. 0, No. 2 (2003). As one representative example of the topics presented at this conference, the cover picture of the present issue issue of phys. stat. sol. (a) shows the band scheme of a typical GaInAs/AlInAs superlattice quantum cascade laser, taken from the invited paper by Razeghi and Slivken [1]. [source]

Use of contactless electroreflectance in the development of quantum cascade lasers from ZnCdSe/ZnCdMgSe

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2009
Martin Muńoz
Abstract Electro-modulation techniques have been used extensively to analyze interband transitions in materials and devices, however little has been done to use these techniques for the analysis of intersubband transitions in materials and devices. In this work, contactless electroreflectance has been used to determine the conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures. Toward the development of quantum cascade lasers, multi-quantum well structures with intersubband absorption at 178 meV were analyzed using contactless electro-reflectance. Finally, quantum cascade laser structures were designed for emission at 4.8 ,m. The multi-quantum well structures presented an excellent agreement between the designed and measured absorption and emission, respectively. This work demonstrates that contactless electro-reflectance can accurately determine the conduction band offset and is useful in the analysis of intersubband transitions. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Temperature degradation of the gain transition in terahertz quantum cascade lasers , the role of acoustic phonon scattering

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2009
Rikard Nelander
Abstract The temperature degradation in terahertz quantum cascade lasers is investigated with the focus on the role of acoustic phonon scattering. A self-energy describing the electron-acoustic phonon interaction is derived and used to study the importance in transport and optical properties. We observe a strong degradation of the gain peak with temperature. Despite the very small coupling to electrons, the exclusion of acoustic phonon scattering alters the current and peak gain in the order of 5%. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2006
Quankui Yang
Abstract High-temperature (up to at least 400 K) pulsed-mode operation of quantum cascade (QC) lasers based on GaInAs/Al(Ga)AsSb grown lattice-matched on InP substrates are presented in this article. The emission wavelength of the QC lasers is in the range from 4 µm to 5 µm at room temperature. For a typical device with the size of 18 µm × 2.8 mm, based on a 25-stage GaInAs/AlAsSb active region, mounted substrate-side down with as-cleaved facets, a maximum peak power per facet of 750 mW has been achieved at room temperature. The maximum pulsed operation temperature for the GaInAs/AlGaAsSb-based QC lasers is estimated to be 450 K. For a typical device with the size of 14 µm × 1.5 mm mounted substrate-side down with as-cleaved facets, a maximum peak power per facet of 190 mW has been achieved at 400 K for the GaInAs/AlGaAsSb based QC lasers. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Proceedings of the 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2003
Martin Wegener
The 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7) was held at the Universität Karlsruhe (TH) from 24,28 February 2003. Topics of NOEKS 7 were: Ultrafast dynamics (coherent effects, coherent control, quantum kinetics, THz-experiments), photonic crystals (2D and 3D photonic band gap materials), quantum dot physics (quantum dots, quantum wires), spin effects (spin dephasing, spin transport), disorder-related effects, organic semiconductors, semiconductor quantum optics (luminescence, photon statistics), device physics (quantum cascade lasers, superlattices, interband lasers), and Bose-Einstein condensation of excitons. [source]