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Pseudobinary System (pseudobinary + system)
Selected AbstractsChemInform Abstract: The Temperature-Composition Phase Equilibria in the Hg0.8Cd0.2Te,HgI2 Pseudobinary System.CHEMINFORM, Issue 37 2002Mark A. Hutchins Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] Structures of stable and metastable Ge2Bi2Te5, an intermetallic compound in a GeTe,Bi2Te3 pseudobinary systemACTA CRYSTALLOGRAPHICA SECTION B, Issue 3 2007Toshiyuki Matsunaga Ge2Bi2Te5 in the GeTe,Bi2Te3 pseudobinary system has two single-crystalline phases: a metastable phase with an NaCl-type structure and a stable phase with a nine-layer trigonal structure. In the metastable phase, the structure consists, in the hexagonal notation, of infinitely alternating stacks of Te and Ge/Bi layers at equal intervals along the c axis. On the other hand, in the stable phase those two layers are stacked alternately nine times to form an NaCl block. The blocks are then piled to construct a nine-layered trigonal structure with cubic close-packed stacking. Both ends of each block are covered with Te layers, contrary to the infinite alternation of Ge/Bi and Te layers in the structure of the metastable phase. The Ge/Bi layers in the metastable phase contain as much as 20,at.,% vacancies; on the other hand, those in the stable phase are filled with atoms. These two crystalline phases in Ge2Bi2Te5 have identical atomic configurations to the two corresponding phases found in Ge2Sb2Te5. [source] Structural investigation of GeSb6Te10 and GeBi6Te10 intermetallic compounds in the chalcogenide homologous seriesACTA CRYSTALLOGRAPHICA SECTION B, Issue 4 2010Toshiyuki Matsunaga The crystal structures of GeSb6Te10 and GeBi6Te10 were scrutinized using an X-ray powder diffraction method, which revealed that these compounds crystallize in trigonally distorted cubic close-packed structures with a 51-layer period (). Each layer consists of a triangular atomic net; Te atoms occupy their own specific layers, whereas Ge, Sb and Bi atoms are located in the other layers. In these pseudobinary compounds, random atomic occupations of Ge and Sb/Bi are observed and the layers form two kinds of elemental structural blocks by their successive stacking along the c axis. These compounds can be presumed to be isostructural. It is known that the chemical formula of the chalcogenide compounds with the homologous structures found in these pseudobinary systems can be written as (GeTe)n(Sb2Te3)m or (GeTe)n(Bi2Te3)m (n, m: integer); the GeSb6Te10 and GeBi6Te10 investigated in this study, which correspond to the case in which n = 1 and m = 3, naturally have 3,×,l = 51-layer structures according to a formation rule l = 2n + 5m commonly found in the compounds of these chalcogenide systems (l represents the number of layers in the basic structural unit). Calculations based on the density functional theory revealed that these materials are compound semiconductors with very narrow band gaps. [source] | ||||||||||