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Power Dissipation (power + dissipation)
Selected AbstractsSynthesis of general impedance with simple dc/dc converters for power processing applicationsINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 3 2008J. C. P. Liu Abstract A general impedance synthesizer using a minimum number of switching converters is studied in this paper. We begin with showing that any impedance can be synthesized by a circuit consisting of only two simple power converters, one storage element (e.g. capacitor) and one dissipative element (e.g. resistor) or power source. The implementation of such a circuit for synthesizing any desired impedance can be performed by (i) programming the input current given the input voltage such that the desired impedance function is achieved, (ii) controlling the amount of power dissipation (generation) in the dissipative element (source) so as to match the required active power of the impedance to be synthesized. Then, the instantaneous power will be automatically balanced by the storage element. Such impedance synthesizers find a lot of applications in power electronics. For instance, a resistance synthesizer can be used for power factor correction (PFC), a programmable capacitor or inductor synthesizer (comprising small high-frequency converters) can be used for control applications. Copyright © 2007 John Wiley & Sons, Ltd. [source] Efficient output waveform evaluation of a CMOS inverter based on short-circuit current predictionINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 5 2002A. Chatzigeorgiou Abstract A novel approach for obtaining the output waveform, the propagation delay and the short-circuit power dissipation of a CMOS inverter is introduced. The output voltage is calculated by solving the circuit differential equation only for the conducting transistor while the effect of the short-circuit current is considered as an additional charge, which has to be discharged through the conducting transistor causing a shift to the output waveform. The short-circuit current as well as the corresponding discharging current are accurately predicted as functions of the required time shift of the output waveform. A program has been developed that implements the proposed method and the results prove that a significant speed improvement can be gained with a minor penalty in accuracy. Copyright © 2002 John Wiley & Sons, Ltd. [source] A 5-GHz low-phase noise CMOS VCO with swing boosting techniqueMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 9 2009Junhua Liu Abstract A 5-GHz CMOS VCO with improved phase noise is proposed in this article. A gate voltage boosting technique is realized with only one inductor. The proposed VCO is fabricated in 0.18 ,m CMOS process, and the measured phase noise is ,122.7 dBc/Hz@1 MHz when operates at 4.936 GHz, with a power dissipation of 5.28 mW from 1 V supply. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2061,2064, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24539 [source] A 60-GHz low-noise amplifier for 60-GHz dual-conversion receiverMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2009Yo-Sheng Lin Abstract A 60-GHz-band low-noise amplifier (LNA) using bulk 65-nm CMOS technology is reported. To achieve sufficient gain, this LNA is composed of three cascade common-source stages followed by a cascode output stage. Current-sharing technique is adopted in the second and third stage to reduce power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain over the 57,64-GHz-band of interest. This LNA achieved input return loss (S11) of ,10.6 to ,37.4 dB, voltage gain (AV) of 10.7,18.8 dB, reverse isolation (S12) of ,43.5 to ,48.1 dB, input referred 1-dB compression point (P1dB-in) of ,16.2 to ,20.8 dBm, and input third-order intermodulation point (IIP3) of ,4 to ,7.5 dBm over the 57,64-GHz-band of interest. It consumed only a small DC power of 21.4 mW. In addition, the chip area was only 0.849 × 0.56 mm2, including all the test pads and bypass capacitors. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 885,891, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24200 [source] A low-power V-band CMOS low-noise amplifier using current-sharing techniqueMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 7 2008Hong-Yu Yang Abstract A low-power-consumption 53-GHz (V-band) low-noise amplifier (LNA) using standard 0.13 ,m CMOS technology is reported. To achieve sufficient gain, this LNA is composed of four cascaded common-source stages. Current-sharing technique is adopted in the third and four stages to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain at the design frequency. This LNA achieved voltage gain (AV) of 14 dB, very low noise figure (NF) of 6.13 dB, input referred 1-dB compression point (P1dB-in) of ,20 dBm, and input third-order inter-modulation point (IIP3) of ,9 dBm at 53 GHz. It consumed only a very small dc power of 10.56 mW. In addition, the chip area was only 0.91 × 0.58 mm2, including all the test pads and bypass capacitors. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1876,1879, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23523 [source] Numerical investigation of the influence of material properties and adhesive layer thickness on the heating efficiency of microwave curing of an adhesive-bonded jointPOLYMER ENGINEERING & SCIENCE, Issue 8 2004H. W. So In the process of microwave curing of an adhesive-bonded joint, both the adhesive layer and the adherends affected the heating efficiency of the joint. As an extension of previous studies, the influences of changing the properties of the components of the joint on the heating efficiency were predicted by simulations that were based on the numerical model developed previously. The influence of adhesive thickness was also studied. The properties that directly affected power dissipation and heat loss of the adhesive layer were found to be important to the heating efficiency of the process. The heating rate was also sensitive to the thickness of the adhesive layer. Polym. Eng. Sci. 44:1414,1418, 2004. © 2004 Society of Plastics Engineers. 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