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Polarization Degree (polarization + degree)
Selected AbstractsSpectroscopic phase modulated ellipsometry in application to some novel single and polycrystalline ternary compoundsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006N. Mamedov Abstract The results of the application of the spectroscopic phase modulated ellipsometry (SPME) to a series of novel ternary compounds from anisotropic to polycrystalline are presented to show the high effectiveness of this optical technique with regard to the dielectric function of the new materials. Besides, SPME in specular reflection mode to study the polarization degree of the light reflected at specular angle is shown to be very informative in determination of the best conditions for optical measurements on rough surfaces such as, for example, surfaces of the polycrystalline ternary thiogallate compounds studied in this work. An incoherent approach relating the measured depolarization with the surface variance and optical constants of a material or thin film is proposed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Exciton states and tunneling in semimagnetic asymmetric double quantum wellsPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2010S. V. Zaitsev Abstract Exciton level structure and interwell relaxation are studied in Cd(Mn,Mg)Te-based asymmetric double quantum wells (ADQWs) by a steady-state optical spectroscopy in magnetic fields up to B,=,10,T. The as grown heterostructures with CdTe QWs and nonmagnetic interwell CdMgTe barrier were subjected to a rapid temperature annealing to introduce Mn and Mg atoms from opposite barriers inside the QWs which results in a formation of the ADQW with completely different magnetic field behavior of the intrawell excitons. The giant Zeeman effect in the QW with magnetic Mn ions gives rise to a crossing of the ground exciton levels in two QWs at BC,,,3,6,T which is accompanied by a reverse of the interwell tunneling direction. In a single-particle picture the exciton tunneling is forbidden at B,<,1,T as supported by calculations. Experimentally, nevertheless, a very efficient interwell relaxation of excitons is found at resonant excitation in the whole magnetic field range, regardless of the tunneling direction, emphasizing importance of excitonic correlations in the interwell tunneling. At nonresonant excitation an unexpectedly slow relaxation of the ,, -polarized excitons from the nonmagnetic QW to the ,+ -polarized ground state in the semimagnetic QW is observed at B,>,BC, giving rise to a nonequilibrium distribution of excitons in ADQW. A strong dependence of the total circular polarization degree on the hh,lh splitting ,hh,lh in the nonmagnetic QW is found and attributed to the spin dependent interwell tunneling controlled by an exciton spin relaxation. Different charge-transfer mechanisms are analyzed in details and an elastic scattering due to a strong disorder is suggested as the main tunneling mechanism with the underlying influence of the valence band-mixing. [source] Optical characterization of Zn0.97Mn0.03Se/ZnSe0.92Te0.08 type II multiple-quantum-well structuresPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2007D. Y. Lin Abstract The optical characterization of type II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures have been studied using photoluminescence (PL), temperature-dependent PL, polarized PL, power-dependent PL, and photoreflectance (PR) in this study. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe system is type II. Comparing with the theoretical calculation based on the Schrodinger equation, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blueshift under different excitation power. The blueshift can be interpreted in terms of the band-bending effect due to spatially photoexcited carriers in a type II alignment. The thermal activation energy (EA) for quenching the PL intensity was determined from tem- perature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe and ZnSeTe layers decreased. The polarized PL spectra exhibit a large in-plane polarization with the polarization degree up to 50%. The polarization does not depend on the excitation intensity as well as temperature. The large polarization is an inherent orientation of the interface chemical bonds. The higher transition features observed in PR spectra show a blueshift with the similar trend observed in the PL spectra as decreasing the thickness of ZnSeTe layer. This result provides a consistent evidence for the assumption that square-like well shapes were built in the ZnSeTe layers. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical spin injection into InGaAs quantum dots: single dot devices and time-resolved studiesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2009M. Hetterich Abstract In the context of a potential future quantum information processing we investigate the concurrent initialization of electronic spin states in InGaAs quantum dots (QDs) via electrical injection from ZnMn(S)Se spin aligners. Single dots can be read out optically through metallic apertures on top of our spin-injection light-emitting diodes (spin-LEDs). A reproducible spin polarization degree close to 100% is observed for a subset of the QD ensemble. However, the average polarization degree is lower and drops with increasing QD emission wavelength. Our measurements suggest that spin relaxation processes outside the QDs, related to the energetic position of the electron quasi-Fermi level, as well as defect-related spin scattering at the III,V/II,VI interface should be responsible for this effect, leading us to an improved device design. Finally, we present first time-resolved electroluminescence measurements of the polarization dynamics using nanosecond-pulsed electrical excitation. The latter should enable us to gain a more detailed understanding of the spin relaxation processes in our devices. They are also the first step towards future time-resolved spin manipulation experiments. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Angular switching of the linear polarization of the emission in InGaAs microcavitiesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2005A. Amo Abstract The angular dependence of the degree of linear polarization of the emission is presented for an InGaAs microcavity at several detunings. For emission angles (, ) close to the growth direction, polarizations as high as +80% for lower branch polaritons at negative detuning are found. This polarization degree abruptly switches to negative values (up to ,90%) for emission angles outside a narrow cone of about ±2º. A similar behaviour, with smaller values of the polarization, is found at 0 and positive detunings. The relation between these effects and cavity birefringence is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||