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Polariton Modes (polariton + mode)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Bipolariton laser emission from a GaAs microcavity

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2007
L. M. Moreira
Abstract Biexciton emission properties were studied in a single GaAs quantum well (QW) semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser like behavior. Very small linewidths were measured, lying below 110 µeV and 150 µeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Zero dimensional exciton-polaritons

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 10 2006
A. Baas
The cover picture from the article [1] shows, in the left parts of the three diagrams, the measured photoluminescence intensity as a function of energy and emission angle for a 3 ,m (left diagram), 9 ,m (middle diagram) and 19 ,m-diameter quasi-circular mesa (right diagram). The white lines are the energy dispersions of 2D polariton modes. For clarity, intensities above 1485 meV have been multiplied by a constant factor, as indicated. The right parts of the diagrams contain intensity plots of the simulated polariton spectral density for cylindrical mesas of the same diameters, yielding very good quantitative agreement of the 0D polariton states in the circular mesas. This confirms the coexistence of 0D and 2D microcavity polaritons in these semiconductor structures. This paper is an invited presentation from the 8th International Workshop on Nonlinear Optics and Excitation Kinetics. Further articles from NOEKS 8 are published in phys. stat. sol. (c) 3, No. 7 (2006). [source]

Phonon polariton modes in porous III,V semiconductors

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2005
K. S. Joseph Wilson
Abstract The phonon polariton modes in the bulk porous III,V semiconductor materials like GaP and GaAs are investigated for different porosity values. Their behavior under an external hydrostatic pressure is also studied. The frequencies of the various modes shift to higher values. The model has been extended to the case of self assembled GaP quantum dots (QDOTs) in GaAs matrix. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Vibrational polaritons in thin oxide and nitride films

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2008
V. A. Yakovlev
Abstract Angular dependencies of infrared reflectivity spectra of thin silicon oxinitride amorphous films on silicon and porous aluminum oxide films on aluminum had been measured. These spectra show vibrational bands and strong interference bands allowing film thickness and dielectric function calculation and providing useful information on the bonding structure of the coatings. Angular dependencies of these bands give the dispersion of vibrational and interference polariton modes in the films. The intersection of vibrational and interference polaritons has been observed for silicon oxinitride film. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]