Home  About us  Contact
 

Plane GaN (plane + gan)

Distribution by Scientific Domains
Physics and Astronomy70%

Terms modified by Plane GaN

  • plane gan film
    		•

    Selected Abstracts

    Nanowire-Templated Epitaxial Growth: Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a -Plane GaN on r -Plane Sapphire (Adv. Mater.

    ADVANCED MATERIALS, Issue 23 2009
    23/2009)
    George Wang and co-workers report on p. 2416 that low dislocation density a -plane GaN films can be grown by the coalescence of vertically-aligned, single-crystalline GaN nanowires on lattice-mismatched r -plane sapphire. In this technique, shown by the artists' rendering on the inside cover, the nanowires facilitate dramatic strain relaxation in the suspended GaN film, leading to a large reduction in defects. [source]

    Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a -Plane GaN on r -Plane Sapphire

    ADVANCED MATERIALS, Issue 23 2009
    Qiming Li
    Coalescence of a vertically aligned GaN nanowire array on r -plane sapphire, a technique called nanowire-templated lateral epitaxial growth, is used to grow low-dislocation density a -plane GaN. The resulting film is connected to the lattice-mismatched substrate by nanowires, which facilitates dramatic strain relaxation and leads to a significant reduction in defects. [source]

    Activation energy of Mg in a -plane Ga1,xInx N (0 < x < 0.17)

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2009
    Daisuke Iida
    Abstract We investigated the electrical properties of Mg-doped Ga1,xInx N grown on an a -plane template. High-hole-concentration p-type Mg-doped Ga1,xInx N films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a -plane GaN grown on an r -plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm,3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a -plane Ga0.83In0.17N was found to be as low as 48 meV. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a -plane GaN

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2006
    V. Darakchieva
    Abstract Generalized infrared spectroscopic ellipsometry was applied to study the vibrational properties of anisotropically strained a -plane GaN films with different thicknesses. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and strain-free frequency of the GaN A1(TO) mode. These results are compared with previous theoretical and experimental findings and discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
    T. J. Badcock
    Abstract We investigate the optical properties of lateral epitaxially overgrown non-polar a -plane GaN using photoluminescence and spatially resolved cathodoluminescence spectroscopy. Despite the decreased density of extended defects relative to a -plane templates, in material overgrown at a low V:III ratio (57), the low temperature emission spectrum is very weak and is dominated by impurity bands centred at 2.92 and 2.25 eV. On subsequent overgrowth at a higher V:III ratio (260), the intensity of the near band edge emission increases by many orders of magnitude and a donor-acceptor pair band is seen. We suggest that the dramatic modification of the optical properties is related to the impurity or point-defect incorporation rate at the different V:III ratios employed. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    TEM characterization of M -plane InN grown on (100) LiAlO2 substrate by RF-MBE

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
    Hirokazu Nozawa
    Abstract In this study, we characterized the microstructure of M -plane InN using transmission electron microscopy (TEM). The M -plane InN was grown on a (100) LiAlO2 substrate using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). We determined the epitaxial relationships of the M -plane InN and LiAlO2 using selected area electron diffraction (SAED). The epitaxial relationships were exactly the same as the M -plane GaN grown on the same substrate. Also, the M -plane InN was grown on the (100) LiAlO2 despite the high lattice mismatches between M -plane InN and LiAlO2. We observed a high density of stacking faults parallel to (0001)InN. The density was estimated about 1.8×106 cm,1, which was one order of magnitude higher than that of non-polar GaN. The correlation between threading dislocations and stacking faults is investigated. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Selective area heteroepitaxy of low dimensional a -plane and c -plane InGaN nanostructures using pulsed MOCVD

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
    V. Jindal
    Abstract High density a -plane and c -plane InGaN nanostructures have been developed by nanoscale selective area epitaxial growth using pulsed MOCVD. SiO2 was used as a mask with nanopatterning through an anodic aluminum oxide template. The lateral dimensions of the pattern were controlled and varied from 30 nm to 180 nm by changing the anodization voltage and the electrolyte. Different substrates such as a -plane GaN on r -plane sapphire, r -plane sapphire and c -plane sapphire were used to develop InGaN nanostructures in a - and c - crystallographic directions respectively. Under identical growth conditions, InGaN nanostructures of various shapes were obtained on different substrates with differences in emission wavelength. The shape of the nanostructures on different substrates is discussed with respect to the stability and growth rates of various planes. However, the difference in emission wavelength is attributed to the In incorporation in the nanostructures. The optical properties of the nanostructures were studied by photoluminescence (PL) spectroscopy. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Structural and electrical characterization of a -plane GaN grown on a -plane SiC

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
    M. D. Craven
    Abstract Planar nonpolar () a -plane GaN thin films were grown on () a -plane 6H-SiC substrates via metalorganic chemical vapor deposition by depositing a high temperature AlN buffer layer prior to the epitaxial GaN growth. The orientation of the GaN film and AlN buffer layer directly match that of the SiC substrate, as determined by on- and off-axis X-ray diffraction measurements. The morphological evolution of GaN grown on the AlN buffer layers was investigated using atomic force microscopy. Microstructural characterization of the coalesced a -plane GaN films provided by plan-view transmission electron microscopy revealed threading dislocation and stacking fault densities of ,3 × 1010 cm,2 and ,7 × 105 cm,1, respectively. Structural comparisons to a -plane GaN films grown on r -plane sapphire substrates are presented. Si-doped films were grown with a variety of Si/Ga ratios and electrically characterized using Hall effect measurements. A maximum Hall mobility of 109 cm2/Vs was attained at a carrier concentration of 1.8 × 1019 cm,3. [source]