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Plasma Sputtering (plasma + sputtering)

Distribution by Scientific Domains
Physics and Astronomy80%

Kinds of Plasma Sputtering

  • helicon-wave-excited plasma sputtering
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    Selected Abstracts

    Gold Nanoparticle-Based Mediatorless Biosensor Prepared on Microporous Electrode

    ELECTROANALYSIS, Issue 3 2006
    Fenghua Zhang
    Abstract A mediatorless biosensor was fabricated with a double-sided microporous gold electrode by successively immobilizing a mixed self-assembled monolayer (SAM) comprising carboxylic-acid- and thiol-terminated thiolate (dl -thiorphan and 1,8-octanedithiol), glucose oxidase (GOx) and finally gold nanoparticle (Au NP) on one working side. The double-sided microporous gold electrodes were formed by plasma sputtering of gold on a porous nylon substrate, yielding a face-to-face type two-electrode electrochemical cell. While the straight chain molecule 1,8-octanedithiol forms a dense insulating monolayer, the side armed dl -thiorphan forms a low density layer for the diffusion of redox couples to the electrode surface. The mixed SAM not only provided the linking functional groups for both enzyme and Au NP but also resulted in the appropriately spaced monolayer for direct electron tansfer (ET) process from the center of the redox enzyme to the electrode surface. After covalently immobilizing GOx onto the carboxylic-acid-terminated monolayer, Au NP was easily immobilized to both enzyme and nearby thiols by simple dispensing of the colloidal gold solution. It was observed that the resulting amperometric biosensor exhibited quantitatively the same response to glucose in the presence and in the absence of dissolved oxygen, which evidence that the Au NPs immobilized on and around the GOx promote direct ET from the enzymes to the electrode, assuming the role of a common redox mediator. [source]

    Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
    Mutsumi Sugiyama
    Abstract Sputtering deposition of Ga-doped ZnO (ZnO:Ga) thin films was carried out using the helicon-wave-excited plasma sputtering (HWPS) method. The films sputtered above 150 °C had a preferential {0001} orientation. According to the surface-damage-free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250 °C, the electron mobility was limited to as low as 2,3 cm2/V s due to the small grain size (,25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Fabrication of a n -type ZnO/p -type Cu,Al,O heterojunction diode by sputtering deposition methods

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
    Satoru Takahata
    Abstract CuAlO2 polycrystalline films were deposited by the helicon-wave-excited plasma sputtering (HWPS) method at 700 °C. The best full-width at half-maximum value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was similar to those reported previously using other deposition methods. While, noncrystalline Cu,Al,O films were deposited by a conventional RF sputtering method. Using this p -type transparent conducting oxide (TCO) film and an n -type ZnO film deposited by HWPS, a n -type ZnO/p -type Cu,Al,O heterojunction diode was fabricated. Optical transmittance of the device was approximately 80% in the near infrared region. The rectifying current,voltage characteristics with a threshold forward voltage approximately 1.4 V were obtained. These results are the first step toward realizing an electrical/optical device using p -type CuAlO2 or Cu-Al-O films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
    Shingo Masaki
    Abstract Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface. The results indicate that CdS-free Cu(In,Ga)Se2 -based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In,Ga)Se2 layer using the HWPS method. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]