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Photoluminescence Peak (photoluminescence + peak)
Selected AbstractsSynthesis of CdSe quantum dots with luminescence in the violet region of the solar spectrumLUMINESCENCE: THE JOURNAL OF BIOLOGICAL AND CHEMICAL LUMINESCENCE, Issue 1 2010Nisha Shukla Abstract We have designed a simple, one-step synthesis of CdSe quantum dots with photoluminescence frequencies ranging from the red through to the violet region of the solar spectrum. The photoluminescence peaks have FWHM of 30 nm indicating absorption over a narrow range of wavelengths. The effect of solvent type and solvent boiling point on the physical and photoluminescence properties of the quantum dots has been studied. High boiling point, non-polar solvents shift the photoluminescence peak to longer wavelengths and low boiling point, polar solvents shift the photoluminescence peak to shorter wavelengths. Copyright © 2009 John Wiley & Sons, Ltd. [source] Optical, structural, and magnetic properties of p-type GaN implanted with Fe+ (5 and 10 at%)PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2007Yoon Shon Abstract p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe+. The results of energy dispersive X-ray peak displayed the Fe-injected concentration of 5 and 10 at%, respectively. The results of photoluminescence measurement show that optical transitions related to Fe appear at 2.5 and 3.1 eV. It was confirmed that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak at 3.1 eV is a conduction band-Fe acceptor transition. Apparent ferromagnetic hysteresis loops measured at 10 and 300 K with the Fe concentration of 10 at% were observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting up to 300 K. The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5 , 10 at%) takes place with an increase in the annealing temperature from 700 to 850 °C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002) including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the increased sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy systematically. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-offPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 12 2004Tongjun Yu Abstract Photoluminescence and Raman scattering spectra of InGaN/GaN MQWs on sapphire and membranes free of substrate fabricated by laser lift-off have been studied. It is observed that photoluminescence peak of 850 °C annealed sample red-shifts from that of as grown sample, while in the case of membrane samples, the luminescence peak blue-shifts when annealed at 700 °C. In Raman scattering spectra, InGaN/GaN MQWs film without sapphire substrate has a lower E2 mode frequency (569.3 cm,1) than that of the films with substrate (570.8 cm,1), which indicates that compressive stress in the films releases partially when the sapphire substrate is taken off. It is believed that the piezoelectric field decrease leads to the blue-shift in luminescence spectra. Compared with the samples with sapphire substrate, the free-standing membranes showed blue-shift of luminescence peak after relatively low temperature annealing, because the piezoelectric field reduced more easily in the films without substrate. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of strain and alloy composition inhomogeneity on the electronic and optical properties of III-nitride semiconductorsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2008Nikos Skoulidis Abstract Using the empirical tight binding method with a sp3s* basis for the first neighbour interactions and only p,p interactions for the second neighbours, we calculated the optical properties near the fundamental gap of cubic GaxAl1,xN alloys for x<0.33 grown on a substrate whose lattice constant varies from the lattice constant of cubic AlN to GaN. We found that the spectra of the fully relaxed alloy have a tail with onset energy at the indirect gap of AlN and an edge at the direct gap of the alloy which follows the Vegard's law within 0.1 eV. The maximum of band gap for each alloy composition is found for a substrate with the lattice constant of the fully relaxed alloy. When the substrate composition is such that induces negative tetragonal strain on the alloy (,xx<0) the energy band gap is mainly affected by the alloy composition while for ,xx>0 the alloy composition has a limited effect. The total effect of substrate and alloy composition in the calculated range on the band gap can be as much as 0.4 eV and is mainly due to the valence band shift as the conduction band is only slightly affected by the substrate or the alloy composition. This band gap change is adequate to explain the experimentally observed double photoluminescence peak of open quantum dots. The energy separation of the double peak is 0.1 eV and one peak can be attributed to the tetragonically strained wetting layer and the other to the fully relaxed quantum dots. Furthermore the present results can be used to estimate any possible stoichiometric inhomogeneity and help design structures with specific energies for the pair of peaks. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Amorphous GaN:Zn films deposited by molecular beam deposition for blue electroluminescent devicesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003T. Honda Abstract The fabrication of Zn-doped amorphous GaN (a-GaN:Zn) films deposited on glass substrates is reported. The role of Zn in a-GaN films is also discussed with respect to light emission. A bluish photoluminescence peak at around 450 nm was observed from the a-GaN:Zn films at room temperature, which was not observed from the undoped a-GaN films. The emission intensity of a-GaN films was higher than that of undoped a-GaN films. This is due to the improvement of networks in amorphous films upon the introduction of Zn doping. The Zn doping of a-GaN films is effective for the fabrication of high-luminescent a-GaN films with a strong blue-light emission. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Optical properties of InAs/InP quantum dot stack grown by metalorganic chemical vapor depositionPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2003Heedon Hwang Abstract The 5-layer InAs quantum dot (QD) stack was grown on an (001) InP substrate by low pressure-metalorganic chemical vapor deposition. 40 nm InP spacer layers were inserted between the InAs QDs. The integrated intensity of the photoluminescence peak at 300 K was over 12% of that at 10 K. Far-infrared absorption peaks were observed at 819 cm,1 (101.64 meV) and 518 cm,1 (64.08 meV) from this structure at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm,1 was attributed to a plasmon related peak in the n-type InP substrate. The absorption peak at 518 cm,1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot devices may be fabricated. [source] Novel family of triphenylamine-containing, hole-transporting, amorphous, aromatic polyamides with stable electrochromic propertiesJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 10 2005Tzy-Hsiang Su Abstract We report the preparation and characterization of a series of novel electrochromic, aromatic poly(amine amide)s with pendent triphenylamine units. The synthesis proceeded via direct phosphorylation polycondensation between a novel diamine, N,N -bis(4-aminophenyl)- N,,N,-diphenyl-1,4-phenylenediamine, and various aromatic dicarboxylic acids. All the poly(amine amide)s were amorphous and readily soluble in many common organic solvents and could be solution-cast into transparent, tough, and flexible films with good mechanical properties. They exhibited good thermal stability and 10% weight-loss temperatures above 540 °C. Their glass-transition temperatures were 263,290 °C. These polymers in N -methyl-2-pyrrolidinone solutions exhibited strong ultraviolet,visible absorption peaks at 307,358 nm and photoluminescence peaks around 532,590 nm in the green region. The hole-transporting and electrochromic properties were studied with electrochemical and spectroelectrochemical methods. Cyclic voltammograms of poly(amine amide) films prepared by the casting of polymer solutions onto an indium tin oxide coated glass substrate exhibited two reversible oxidation redox couples at 0.65 and 1.03 V versus Ag/AgCl in an acetonitrile solution. All the poly(amine amide)s showed excellent stability with respect to their electrochromic characteristics; the color of the films changed from pale yellow to green and then blue at 0.85 and 1.25 V, respectively. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 2085,2098, 2005 [source] resonance enhancement of photoluminescence from silicon nanocrystallitesPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2009L. V. Belyakov Abstract An interaction of molecular oxygen and p-Si nanocrystallites in HF,ethanolic solution with simultaneous illumination has been investigated. It is shown that after such treatment with white-light exposure the photoluminescence from nanocrystallites enhances substantially caused by photogenerated singlet forms of molecular oxygen. In the case of monochromatic illumination with photon energy in the range 2.5,0.95 eV dependence of photoluminescence intensity after the treatment on photon energy used shows resonant peaks corresponding to the absorbance peaks of excited molecular oxygen. To our knowledge such photoluminescence peaks in porous silicon spectroscopy have been observed for the first time. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||