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Phonon Energies (phonon + energy)

Distribution by Scientific Domains
Physics and Astronomy83%

Selected Abstracts

Exciton,phonon interaction and Raman spectra of [(CH3)2NH2]5Cd2CuCl11 crystals

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 11 2004
V. Kapustianik
Abstract Temperature evolution of the exciton,phonon interaction (EPI) in ((CH3)2NH2)5Cd2CuCl11 solid solution was studied on the basis of absorption spectroscopy data. The obtained values of effective phonon energies were compared with the data of Raman spectroscopy. It is shown that the (T) and E, parameters of Urbach's rule show the continuous anomalous change characteristic of the second-order phase transition at T1 = 176 K. The anomalous behaviour of the EPI and other spectral parameters at T0 = 310,315 K was related to the complex co-operative effect involving weakening of the hydrogen bonds and variation of the Jahn,Teller distortion of metal,halogen polyhedra with temperature. This process takes place only within the copper,chlorine sublattice and due to this would be hardly related to the usual phase transition. At the same time, the considered temperature change of the tetragonal distortion of the metal,halogen octahedra is followed by nonfulfillment of Urbach's rule in the temperature range TT0. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Photoluminescence studies of isotopically enriched silicon

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 1 2003
D. Karaiskaj
Abstract We report the first high resolution photoluminescence studies of isotopically pure silicon. New information is obtained on isotopic effects on the indirect band gap energy, phonon energies, and phonon broadenings, which is in good agreement with previous results obtained in germanium and diamond. Remarkably, the line widths of the no-phonon boron and phosphorus bound exciton transitions in the 28Si sample (99.896% 28Si) are much sharper than in natural Si, revealing new fine structure in the boron bound exciton luminescence. Most surprisingly, the small splittings of the neutral acceptor ground state in natural Si are absent in the photoluminescence spectra of acceptor bound excitons in isotopically purified 28Si, demonstrating conclusively that they result from the randomness of the Si isotopic composition. [source]

Photoluminescence properties of erbium-doped amorphous gallium-germanium-selenium films fabricated by RF sputtering

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S1 2009
Takahiko Imai
Abstract Chalcogenide glasses have various useful features for optical devices such as a high refractive index, low-loss transmission in the mid-IR, and low phonon energies. The fabrication of thin films is important for use in waveguide applications and integrated photonics. In this work, we report the properties of vacuum deposited films of gallium-germanium-selenium glasses onto fused silica substrates by an RF magnetron sputtering technique (RF electric power of 40-250 W and growth rate of 0.01-2.1 ,m/min). The concentration of Er3+ ions is controlled by the number of sintered Er2S3 small plates on a target. Samples are shown to be in an amorphous-like state as measured by X-ray diffraction experiments. Film thicknesses are proportional to the RF sputtering power and sputtering time. The compositions of films obtained from energy dispersive X-ray (EDX) analysis. There are much dependent on the condition of the sputtering target, for example whether the target is in the bulk or powder-state. Photoluminescence (PL) spectrum, intensity, and lifetime at 1550 nm band are measured by excitation from a 973 nm laser. The PL band of the films has a similar shape to those of bulk glasses. The PL intensity increased with the RF electric power. The PL lifetime at the 1550 nm band of the film is about 1.8-2.6 ms; the latter values are similar to those of bulk samples. The results show that the RF sputtering is a potential method of fabrication for Er-doped GeGaSe thin films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Enhanced Blue Emission from Transparent Oxyfluoride Glass,Ceramics Containing Pr3+:BaF2 Nanocrystals

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2010
Kaushik Biswas
Transparent glass,ceramics containing Pr3+:BaF2 nanocrystals in the chemical composition of SiO2,BaF2,K2CO3,La2O3,Sb2O3 oxyfluoride glass systems have been prepared from melt quenching and with a subsequent heat-treatment method. The luminescence and structural properties of these materials have been evaluated and the results are reported. Rietveld analysis of X-ray diffraction patterns and investigation of transmission electron microscopy confirmed the presence of BaF2 nanocrystals dispersed in the heat-treated glass matrices. Measured UV-Vis-NIR absorption spectra exhibited nine bands of the transitions 3H4,3P2, (1I6, 3P1), 3P0, 1D2, 1G4, 3F3, 3F2, 3H6, and 3H5 from all the samples with nondegenerated 1I6 and 3P1 levels in the glass,ceramics. The photoluminescence spectra show an enhancement in the intensities upon ceramization, indicating the incorporation of Pr3+ ions into BaF2 nanocrystals that possess a low phonon energy (346 cm,1). This has further been corroborated from the observation of a significant threefold increase in the relative intensity ratio of blue (3P0,3H4) to red (1D2,3H4, 3P0,3H6) emissions from glass,ceramics compared with the glass. This is due to a significant decrease of multiphonon nonradiative relaxation from the 3P0 to the 1D2 level of Pr3+ in glass,ceramics. Time-resolved spectra exhibit 3P0 -level decays faster than the 1D2 level. [source]

Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
H. Yaguchi
Abstract We have studied photoluminescence spectra in detail to clarify the character of the isoelectronic traps in dilute GaAsN alloys. Several sharp lines have been observed at the lower energy side of the GaAs bandgap and are in good agreement with the nitrogen pair-related emission lines previously reported. In addition to the nitrogen pair-related lines, some other emission lines have been also observed. Compared with the energies of these emission lines and the nitrogen pair-related emission lines, it was found that the energy differences agree with the longitudinal optical phonon energy at the , point of GaAs, showing that the character of isoelectronic traps due to nitrogen pairs in dilute GaAsN alloys is significantly contributed from the conduction band state at the , point. The temperature dependence of the peak energy of luminescence due to nitrogen pairs also indicates that the character of isoelectronic traps in dilute GaAsN alloys is due to the conduction band edge state at the , point of GaAs. For a dilute GaAsN alloy with lower nitrogen concentration, we have observed that the intensity of an emission line increased superlinearly with excitation power . (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Energy relaxation in CdSe/ZnSe quantum dots under the strong exciton-phonon coupling regime

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2006
A. V. Platonov
Abstract Resonant photoluminescence and photoluminescence excitation spectroscopy have been applied to CdSe/ZnSe quantumdots where separation between the quantized levels is close to the optical phonon energy. Astrong relaxation enhancement induced by the optical phonon is observed. The fine structure of the phonon replicas is resolved. It is attributed to the optical phonons with large wave vectors from the symmetrical points of the Brillouin zone. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]