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P-type Semiconductor (p-type + semiconductor)

Distribution by Scientific Domains

Physics and Astronomy	83%

Selected Abstracts

Determination of lattice parameters and thermal expansion of CuGe2P3 + 0.2 Ge3P4 at elevated temperatures

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 9 2006
G. Bhikshamaiah
Abstract CuGe2P3 is a p-type semiconductor with zincblende structure. Ge3P4 is soluble up to 35 mole% in CuGe2P3. Lattice parameters of CuGe2P3 + 0.2 Ge3P4 have been determined at elevated temperatures from room temperature to 873 K using the x-ray diffraction profiles (111), (200), (220), (311), (222), (400), (331), (420), (422) and (511) obtained from high temperature diffractometer. It is found that the lattice parameter increases linearly from 0.53856 nm at RT to 0.54025 nm at 873 K. The data on lattice parameter is used and coefficient of lattice thermal expansion of CuGe2P3 +0.2 Ge3P4 was determined at different temperatures. It is found that the coefficient of thermal expansion of CuGe2P3 +0.2 Ge3P4 is 5.48 x 10 -6 K -1 and is independent of temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Complexation of C60 on a Cyclothiophene Monolayer Template,

ADVANCED MATERIALS, Issue 4 2006
E. Mena-Osteritz
Highly ordered monolayers of macrocyclic oligothiophene C[12]T (see Figure) can be used as veritable templates to epitaxially grow 3D nanoarchitectures with C60 -fullerenes. Due to submolecularly resolved STM images, 1:1 complexes consisting of a ring-shaped p-type semiconductor (C[12]T) and a spherical n-type semiconductor (C60) can be investigated in terms of dynamics and complexation sites. [source]

Low-voltage, high-gain, and high-mobility organic complementary inverters based on N,N,-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide and pentacene

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 2 2008
Shuhei Tatemichi
Abstract The authors describe an organic complementary inverter with N,N,-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide as an n-type semiconductor and pentacene as a p-type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm2/Vs for an n-type drive transistor and 0.57 cm2/Vs for a p-type switch transistor. The gain of the inverter reached 125. Another inverter using Ta2O5 as a high , gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Optoelectronic properties of transparent p-type semiconductor CuxS thin films

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2010
P. Parreira
Abstract Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50,nm thick films. However, due to its high conductivity at room temperature, 10,nm in thickness seems to be appropriate for device use. Cu2S thin films with 10,nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. [source]

Comment on "Transport Properties of Tl5Te3 Single Crystals" [phys. stat. sol. (a) Vol.

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2007
329 (2002)], No.
Abstract Recently, Gamal et al. [phys. stat. sol. (a) 191, 322 (2002)] reported the results of electrical conductivity, Hall effect and thermoelectric power (TEP) measurements on Tl5Te3 single crystals. The samples used in the study were p-type semiconductors. From the experimental data for the temperature dependence of TEP, Gamal et al. determined the values of 1.6 × 10,41 kg and 1.5 × 10,40 kg, respectively, for the effective masses of electrons and holes in p-type Tl5Te3, which are about ten orders of magnitude smaller than the free electron mass, 9.11 × 10,31 kg. We argue that the anomalously small values obtained for the effective mass of charge carriers in Tl5Te3 have no physical significance. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]