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Pn Junction (pn + junction)

Distribution by Scientific Domains
Engineering75%

Selected Abstracts

A model for abrupt double heterojunction bipolar transistors

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 1 2004
Antonio J. García-Loureiro
Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi,Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and PN junctions can be easily obtained as a particular case of the general model presented here. In order to illustrate its features, the model is applied to an InP/GaAsSb/InP DHBT and an InP/InGaAs HBT. Copyright © 2004 John Wiley & Sons, Ltd. [source]

Numerical simulation of thermal runaway phenomena in silicon semiconductor devices

HEAT TRANSFER - ASIAN RESEARCH (FORMERLY HEAT TRANSFER-JAPANESE RESEARCH), Issue 6 2002
Kazanori Shioda
Abstract A mathematical model for heat production due to thermal excitation of conductive electrons and positive holes in a semiconductor pn junction is derived and discussed. The model is applied to simulate the thermal runaway phenomena in power electronics semiconductor devices. Our discussion focuses especially on the modeling of unexpected huge currents due to an excessive temperature increase. Calculated dynamics of temperature distributions of a silicon wafer while cooling performance decreases proved it is possible for a silicon wafer to be heated over its melting point in a few milliseconds. Our results indicate that if a local hot spot arises in a wafer, the thermal intrinsic excitation carries an increased diffusion current of minor carriers and a recombination current in the depletion layer of a pn junction. Also it appears to be important that cooling performance should be uniform on the wafer to avoid the growth of hot spots and thermal-runaway itself. © 2002 Wiley Periodicals, Inc. Heat Trans Asian Res, 31(6): 438,455, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/htj.10044 [source]

Mg-doped InN and InGaN , Photoluminescence, capacitance,voltage and thermopower measurements

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2008
J. W. Ager III
Abstract The bandgap range of InGaN extends from the near-IR (InN, 0.65 eV) to the ultraviolet. To exploit this wide tuning range in light generation and conversion applications, pn junctions are required. The large electron affinity of InN (5.8 eV) leads to preferential formation of native donor defects, resulting in excess electron concentration in the bulk and at surfaces and interfaces. This creates difficulties for p-type doping and/or measuring of the bulk p-type activity. Capacitance,voltage measurements, which deplete the n-type surface inversion layer, have been used to show that Mg is an active acceptor in InN and Inx Ga1,xN for 0.2 < x < 1.0, i.e. over the entire composition range. Mg acceptors can be compensated by irradiation-induced native donors. Thermopower measurements were used to provide definitive evidence that Mg-doped InN has mobile holes between 200 K and 300 K. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]