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Output Matching Network (output + matching_network)

Distribution by Scientific Domains
Engineering100%

Selected Abstracts

Optimization of output matching network for class F power amplifier according to envelope in the envelope elimination and restoration transmitter

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 8 2010
Chongmin Lee
Abstract This article presents the design and optimization of output matching network according to envelope for class F power amplifier (PA), which is to apply to envelope elimination and restoration (EER) transmitter. In this article, to increase the PAE of class F PA, which applies to EER transmitter, the varactor diode has been used on output matching network. As envelope changes, it optimizes constitution of harmonic trap that is short circuit in second-harmonic and is open circuit in third-harmonic. When drain voltage changes from 25 V to 30 V, some percentage is improved in the PAE. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1890,1893, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25335 [source]

Compact harmonic control network for Doherty power amplifier

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2009
Paolo Colantonio
Abstract In this contribution, an innovative design solution to realize small size Doherty power amplifier is presented. The idea consists in the realization of a unique output matching network for both carrier and peaking devices without losing the Doherty behavior. Experimental results performed on uneven Doherty amplifier using GaN HEMT device is given to demonstrate the proposed approach. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 256,258, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23983 [source]

A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2005
F. Alimenti
Abstract A variable-gain class-A amplifier for 5-GHz wireless local area networks (WLAN) applications is developed using commercial 0.35-,m Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by nonlinear harmonic-balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE 15, 2005. [source]