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Organic Semiconductor Thin Films (organic + semiconductor_thin_film)
Selected AbstractsDewetting of an Organic Semiconductor Thin Film Observed in Real-time,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Stefan Kowarik We study the growth and the post-growth dewetting process of the organic semiconductor diindenoperylene (DIP) using real-time X-ray reflectivity measurements. We show that a DIP monolayer deposited in UHV onto silicon oxide dewets via the formation of bilayer islands. From the time resolved structural data we estimate the rate constant for interlayer diffusion of DIP molecules. Post-growth AFM measurements confirm the conclusions from the X-ray data and show the morphology of the dewetted film. [source] Control of the Morphology and Structural Development of Solution-Processed Functionalized Acenes for High-Performance Organic TransistorsADVANCED FUNCTIONAL MATERIALS, Issue 10 2009Jung Ah Lim Abstract Solution-processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution-processability, and provide useful benchmarks for organic field-effect transistors (OFETs). Charge-carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self-assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge-carrier transport characteristics of solution-processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film-deposition processes such as inkjet printing and post-deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view to fabricating high-performance OFETs. [source] Organic Thin-Film Transistors: Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors (Adv. Mater.ADVANCED MATERIALS, Issue 35 200935/2009) The grain size in solution-processed organic semiconductor thin films for TFTs can be tuned over a range of three orders of magnitude, report Yueh-Lin Loo and co-workers on p. 3605. The process involves the addition of fractional quantities of "impurities" that are capable of seeding the crystallization of the organic semiconductor, and the control thus exerted permitted studies that correlated increasing device mobility with increasing grain size. [source] Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film TransistorsADVANCED MATERIALS, Issue 35 2009Stephanie S. Lee Three orders of magnitude is the range over which the grain size (see figure) can be tuned in solution-processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl anthradithiophene (FTES-ADT) is added in fractional amounts to seed crystallization of TES-ADT. Correlation between device mobility and grain size in the active layer is described by a composite mobility model that assumes charge-carrier traps are located at grain boundaries. [source] |